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Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffractionFISSEL, Andreas; KRÜGENER, Jan; OSTEN, Hans Jörg et al.Surface science. 2009, Vol 603, Num 3, pp 477-481, issn 0039-6028, 5 p.Article

Optical simulation of the beam flux distribution from molecular beam epitaxy effusion sourcesMICHALAK, L; ADAMCZYK, B; HERMAN, M. A et al.Vacuum. 1992, Vol 43, Num 4, pp 341-345, issn 0042-207XArticle

Studies on scattering of fast H and He atoms from fe films grown on Cu(001)BARON, M; BERNHARD, T; GRUYTERS, M et al.Surface science. 2006, Vol 600, Num 18, pp 3924-3927, issn 0039-6028, 4 p.Conference Paper

Surface bismuth removal after Bi nanoline encapsulation in siliconYAGI, Shuhei; YASHIRO, Wataru; SAKAMOTO, Kunihiro et al.Surface science. 2005, Vol 595, Num 1-3, pp L311-L317, issn 0039-6028Article

Oxidation of TiNi surface with hyperthermal oxygen molecular beamsOKADA, Michio; SOUWA, Makoto; KASAI, Toshio et al.Applied surface science. 2011, Vol 257, Num 9, pp 4257-4263, issn 0169-4332, 7 p.Article

Molecular beam scattering of linear and branched butane on graphite (HOPG)KADOSSOV, E; GOERING, J; BURGHAUS, U et al.Surface science. 2007, Vol 601, Num 16, pp 3421-3425, issn 0039-6028, 5 p.Article

Oxidation of TiAl surface with hyperthermal oxygen molecular beamsHASHINOKUCHI, Michihiro; TODE, Mayumi; YOSHIGOE, Akitaka et al.Applied surface science. 2013, Vol 276, pp 276-283, issn 0169-4332, 8 p.Article

Controllable growth of semiconductor nanometer structuresWANG, Z. G; WU, J.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 379-382, issn 0959-8324, 4 p.Conference Paper

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wellsKOVSH, A. R; ZHUKOV, A. E; ALFEROV, Zh. I et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 491-493, issn 0959-8324, 3 p.Conference Paper

Acetaldehyde adsorption and catalytic decomposition on Pd(110) and the dissolution of carbonBOWKER, Michael; HOLROYD, Richard; PERKINS, Neil et al.Surface science. 2007, Vol 601, Num 17, pp 3651-3660, issn 0039-6028, 10 p.Article

Release of inorganic trace elements during gasification of wood, straw, and miscanthusPORBATZKI, Dirk; STEMMLER, Michael; MÜLLER, Michael et al.Biomass & bioenergy. 2011, Vol 35, issn 0961-9534, S79-S86, SUP1Article

Lateral p-n junctions for high-density LED arraysVACCARO, Pablo O; VOROBEV, A; DHARMARASU, N et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 355-357, issn 0959-8324, 3 p.Conference Paper

Light emission from cubic InGaN nanostructuresLISCHKA, K.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 427-433, issn 0959-8324, 7 p.Conference Paper

Aligned quantum dot molecules with 4 satellite dots by self-assemblySIRIPITAKCHAI, N; THET, C. C; PANYAKEOW, S et al.Microelectronic engineering. 2008, Vol 85, Num 5-6, pp 1218-1221, issn 0167-9317, 4 p.Conference Paper

Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium PhotoconductorsSUZUKI, Toyoaki; WADA, Takehiko; HIROSE, Kazuyuki et al.Publications of the Astronomical Society of the Pacific. 2012, Vol 124, Num 918, pp 823-829, issn 0004-6280, 7 p.Article

Diagnosis of hydrogen ions (H+, H+2, H+3, H-) from the near-electrode region of dielectric barrier discharge plasmasWENCHUN WANG; YONG XU; WEIGUO WANG et al.Journal of physics. D, Applied physics (Print). 2004, Vol 37, Num 8, pp 1185-1189, issn 0022-3727, 5 p.Article

Phonon frequency variations in high quality InAs1-xSbx epilayers grown on GaAsERKUS, M; SERINCAN, U.Applied surface science. 2014, Vol 318, pp 28-31, issn 0169-4332, 4 p.Conference Paper

Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(0 01) substrateKE-FAN, Wang; ZHANG YANG; ZHANG WEIFENG et al.Applied surface science. 2012, Vol 258, Num 6, pp 1934-1938, issn 0169-4332, 5 p.Conference Paper

Comparison of organic thin films deposited by supersonic molecular-beam epitaxy and organic molecular-beam epitaxy : The case of titanyl phthalocyanineWALZER, K; TOCCOLI, T; PALLAORO, A et al.Surface science. 2006, Vol 600, Num 10, pp 2064-2069, issn 0039-6028, 6 p.Article

MBE fabrication of self-assembled Si and metal nanostructures on Si surfacesGALIANA, Natalia; MARTIN, Pedro-Pablo; MUNUERA, Carmen et al.Surface science. 2006, Vol 600, Num 18, pp 3956-3963, issn 0039-6028, 8 p.Conference Paper

Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsNUSHER, B. F; WARMINSKI, T; DIEING, T et al.Surface science. 2007, Vol 601, Num 24, pp 5800-5802, issn 0039-6028, 3 p.Conference Paper

Effect of the nanoscratch resistance of indium nitride thin films in the etching durationHSU, Wen-Nong; SHIH, Teng-Shih.Applied surface science. 2012, Vol 261, pp 610-615, issn 0169-4332, 6 p.Article

Chlorine chemisorption on Cu(001) by surface X-ray diffraction : Geometry and substrate relaxationTOLENTINO, Hélio C. N; DE SANTIS, Maurizio; GAUTHIER, Yves et al.Surface science. 2007, Vol 601, Num 14, pp 2962-2966, issn 0039-6028, 5 p.Article

Thermal imaging of wafer temperature in MBE using a digital cameraJACKSON, A. W; GOSSARD, A. C.Journal of crystal growth. 2007, Vol 301-302, pp 105-108, issn 0022-0248, 4 p.Conference Paper

Three decades of molecular beam epitaxyFOXON, C. T.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 1-8, issn 0022-0248, 8 p.Conference Paper

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