Surface bismuth removal after Bi nanoline encapsulation in siliconYAGI, Shuhei; YASHIRO, Wataru; SAKAMOTO, Kunihiro et al.Surface science. 2005, Vol 595, Num 1-3, pp L311-L317, issn 0039-6028Article

Studies on scattering of fast H and He atoms from fe films grown on Cu(001)BARON, M; BERNHARD, T; GRUYTERS, M et al.Surface science. 2006, Vol 600, Num 18, pp 3924-3927, issn 0039-6028, 4 p.Conference Paper

Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffractionFISSEL, Andreas; KRÜGENER, Jan; OSTEN, Hans Jörg et al.Surface science. 2009, Vol 603, Num 3, pp 477-481, issn 0039-6028, 5 p.Article

Controllable growth of semiconductor nanometer structuresWANG, Z. G; WU, J.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 379-382, issn 0959-8324, 4 p.Conference Paper

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wellsKOVSH, A. R; ZHUKOV, A. E; ALFEROV, Zh. I et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 491-493, issn 0959-8324, 3 p.Conference Paper

Lateral p-n junctions for high-density LED arraysVACCARO, Pablo O; VOROBEV, A; DHARMARASU, N et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 355-357, issn 0959-8324, 3 p.Conference Paper

Light emission from cubic InGaN nanostructuresLISCHKA, K.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 427-433, issn 0959-8324, 7 p.Conference Paper

Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxyYANPING WEI; CUNXU GAO; CHUNHUI DONG et al.Applied surface science. 2014, Vol 293, pp 71-75, issn 0169-4332, 5 p.Article

Scanning tunneling microscopy investigation of CoO/Fe(001) and Fe/CoO/Fe(001) layered structuresBRAMBILLA, A; PICONE, A; FINAZZI, M et al.Surface science. 2011, Vol 605, Num 1-2, pp 95-100, issn 0039-6028, 6 p.Article

Growth and structure of MBE grown TiO₂ anatase films with rutile nano-crystallitesRUI SHAO; CHONGMIN WANG; MCCREADY, David E et al.Surface science. 2007, Vol 601, Num 6, pp 1582-1589, issn 0039-6028, 8 p.Article

Mechanism for coarsening of P-mediated Ge quantum dots during in-situ annealingQIN, J; LI, F. H; WU, Y. Q et al.Surface science. 2007, Vol 601, Num 4, pp 941-944, issn 0039-6028, 4 p.Article

Initial stages of MnAs/GaAs(001) epitaxy studied by RHEED azimuthal scansBRAUN, Wolfgang; SATAPATHY, Dillip K; PLOOG, Klaus H et al.Surface science. 2006, Vol 600, Num 18, pp 3950-3955, issn 0039-6028, 6 p.Conference Paper

Effect of the nanoscratch resistance of indium nitride thin films in the etching durationHSU, Wen-Nong; SHIH, Teng-Shih.Applied surface science. 2012, Vol 261, pp 610-615, issn 0169-4332, 6 p.Article

Chlorine chemisorption on Cu(001) by surface X-ray diffraction : Geometry and substrate relaxationTOLENTINO, Hélio C. N; DE SANTIS, Maurizio; GAUTHIER, Yves et al.Surface science. 2007, Vol 601, Num 14, pp 2962-2966, issn 0039-6028, 5 p.Article

Thermal imaging of wafer temperature in MBE using a digital cameraJACKSON, A. W; GOSSARD, A. C.Journal of crystal growth. 2007, Vol 301-302, pp 105-108, issn 0022-0248, 4 p.Conference Paper

Three decades of molecular beam epitaxyFOXON, C. T.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 1-8, issn 0022-0248, 8 p.Conference Paper

Phonon frequency variations in high quality InAs_1-xSb_x epilayers grown on GaAsERKUS, M; SERINCAN, U.Applied surface science. 2014, Vol 318, pp 28-31, issn 0169-4332, 4 p.Conference Paper

Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(0 01) substrateKE-FAN, Wang; ZHANG YANG; ZHANG WEIFENG et al.Applied surface science. 2012, Vol 258, Num 6, pp 1934-1938, issn 0169-4332, 5 p.Conference Paper

Comparison of organic thin films deposited by supersonic molecular-beam epitaxy and organic molecular-beam epitaxy : The case of titanyl phthalocyanineWALZER, K; TOCCOLI, T; PALLAORO, A et al.Surface science. 2006, Vol 600, Num 10, pp 2064-2069, issn 0039-6028, 6 p.Article

MBE fabrication of self-assembled Si and metal nanostructures on Si surfacesGALIANA, Natalia; MARTIN, Pedro-Pablo; MUNUERA, Carmen et al.Surface science. 2006, Vol 600, Num 18, pp 3956-3963, issn 0039-6028, 8 p.Conference Paper

Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsNUSHER, B. F; WARMINSKI, T; DIEING, T et al.Surface science. 2007, Vol 601, Num 24, pp 5800-5802, issn 0039-6028, 3 p.Conference Paper

Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxyKISHINO, K; HOSHINO, T; ISHIZAWA, S et al.Electronics Letters. 2008, Vol 44, Num 13, pp 819-821, issn 0013-5194, 3 p.Article

Characterization of compositional oscillations in InGaAs films induced by MBE cell configuration and substrate rotationSAMEY, W. L; SVENSSON, S. P.Materials characterization. 2007, Vol 58, Num 3, pp 284-288, issn 1044-5803, 5 p.Article

In-droplet-induced formation of InP nanostructures by solid-source molecular-beam epitaxyJEVASUWAN, Wipakorn; PANYAKEOW, Somsak; RATANATHAMMAPHAN, Somchai et al.Microelectronic engineering. 2007, Vol 84, Num 5-8, pp 1548-1551, issn 0167-9317, 4 p.Conference Paper

Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopyBALZAROTTI, A; FANFONI, M; PATELLA, F et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 595-597, issn 0959-8324, 3 p.Conference Paper