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Twin quintuplet surfaces in CVD diamondSHECHTMAN, Dan.Journal of materials science. 2006, Vol 41, Num 23, pp 7720-7724, issn 0022-2461, 5 p.Conference Paper

Etude des amas de défauts ponctuels dans les monocristaux de silicium par diffraction de quantums gammaKURBAKOV, A. I; RUBINOVA, EH. EH; SOBOLEV, N. A et al.Kristallografiâ. 1986, Vol 31, Num 5, pp 979-985, issn 0023-4761Article

Stacking fault tetrahedra in aluminumGUAN, Q. F; PAN, L; ZOU, H et al.Journal of materials science. 2004, Vol 39, Num 20, pp 6349-6351, issn 0022-2461, 3 p.Article

Observation des ondes acoustiques superficielles générées par la migration d'amas de dislocations sur la surface du cristalBOJKO, V. S; KRIVENKO, L. F.Akustičeskij žurnal. 1987, Vol 33, Num 5, pp 821-825, issn 0320-7919Article

Life cycle of grown-in defects in silicon as observed by IR-LSTKISSINGER, G; VANHELLEMONT, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 7-14, issn 0022-0248Conference Paper

Effects of the primary recoil spectrum on long-range migration of defects = Influences du spectre de recul primaire sur la migration à longue distance des défautsWIEDERSICH, H.Radiation effects and defects in solids. 1990, Vol 113, Num 1-3, pp 97-107, issn 1042-0150Conference Paper

Flux dependence of damage accumulation in silicon during ion bombardmentHOLLDACK, K; KERKOW, H.Physica status solidi. A. Applied research. 1986, Vol 98, Num 2, pp 527-534, issn 0031-8965Article

Vacancy-type defects in 6H-silicon carbide induced by He-implantation : a positron annihilation spectroscopy approachZHU, C. Y; LING, C. C; BRAUER, G et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 19, issn 0022-3727, 195304.1-195304.7Article

Defect structures of tin-doped indium oxideWARSCHKOW, Oliver; ELLIS, Donald E; GONZALEZ, Gabriela B et al.Journal of the American Ceramic Society. 2003, Vol 86, Num 10, pp 1700-1706, issn 0002-7820, 7 p.Article

Defect cluster formation in M₂O₃-doped CeO₂MINERVINI, L; ZACATE, M. O; GRIMES, R. W et al.Solid state ionics. 1999, Vol 116, Num 3-4, pp 339-349, issn 0167-2738Article

Atomic ordering around the oxygen vacancies in sillimanite. A model for the mullite structurePADLEWSKI, S; HEINE, V; PRICE, G. D et al.Physics and chemistry of minerals. 1992, Vol 18, Num 6, pp 373-378, issn 0342-1791Article

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Indirect interaction between mobile defects and their clusterization in metals = Interaction indirecte entre les défauts mobiles et leur mise en amas dans les métauxMOROSOV, A. I; SIGOV, A. S.Solid state communications. 1988, Vol 67, Num 9, pp 841-843, issn 0038-1098Article

Particularités de l'accumulation de défauts d'irradiation dans Bi4Ge3O12 lors d'une irradiation par les protonsARBUZOV, V. YA; KRUZHALOV, A. V; KOROBEJNIKOV, V. P et al.Fizika tverdogo tela. 1988, Vol 30, Num 4, pp 1244-1246, issn 0367-3294Article

Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped siliconTOKUDA, Y; USAMI, A; INOUE, Y et al.Semiconductor science and technology. 1987, Vol 2, Num 5, pp 251-254, issn 0268-1242Article

Influence des contraintes élastiques sur la transformation des amas de défauts dans les semiconducteursSKUPOV, V. D; TETEL'BAUM, D. I.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 8, pp 1495-1497, issn 0015-3222Article

Effets dans un système de dislocations d'incompatibilitéVLADIMIROV, V. I; GUTKIN, M. YU; ROMANOV, A. E et al.Fizika tverdogo tela. 1987, Vol 29, Num 9, pp 2750-2753, issn 0367-3294Article

Radiation defect clusters in electron-irradiated siliconLUGAKOV, P. F; FILIPPOV, I. M.Radiation effects. 1985, Vol 90, Num 3-4, pp 297-305, issn 0033-7579Article

The impact of nitrogen on the defect aggregation in siliconVON AMMON, W; HÖLZL, R; VIRBULIS, J et al.Journal of crystal growth. 2001, Vol 226, Num 1, pp 19-30, issn 0022-0248Article

Growth of CdTe from Te excess solution and self-compensation of doped donorMOCHIZUKI, K.Journal of crystal growth. 2000, Vol 214-15, pp 9-13, issn 0022-0248Conference Paper

Modelling of high temperature superionic transition of uranium dioxide crystalsMATWEEV, L. V; VESHCHUNOV, M. S.Journal of nuclear materials. 1999, Vol 265, Num 3, pp 285-294, issn 0022-3115Article

Investigation of radiation damage by X-ray diffractionEHRHART, P.Journal of nuclear materials. 1994, Vol 216, pp 170-198, issn 0022-3115Conference Paper

A comparison of microstructures in copper irradiated with fission, fusion and spallation neutronsMUROGA, T; HEINISCH, H. L; SOMMER, W. F et al.Journal of nuclear materials. 1992, Vol 191-94, Num B, pp 1150-1154, issn 0022-3115Conference Paper

Centres paramagnétiques résultant de la déformation du siliciumKIZELOVSK-KEMMERIKH, K; ALEKSANDER, G.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 254-261, issn 0367-3294Article