A new approach for the fabrication of diffractive optical elements with rotationally symmetric phase distributionYONGTIAN WANG; FANG CUI; YUNAN SUN et al.SPIE proceedings series. 1998, pp 94-97, isbn 0-8194-2795-0Conference Paper

Inductively coupled plasma reactive ion etching of Co₂MnSi magnetic films for magnetic random access memorySHIN, Byul; IK HYUN PARK; CHEE WON CHUNG et al.Studies in surface science and catalysis. 2006, pp 377-380, issn 0167-2991, isbn 0-444-51733-2, 4 p.Conference Paper

Anisotropic dry etching of boron doped single crystal CVD diamondENLUND, Johannes; ISBERG, Jan; KARLSSON, Mikael et al.Carbon (New York, NY). 2005, Vol 43, Num 9, pp 1839-1842, issn 0008-6223, 4 p.Article

Dephosphorylation of the largest neurofilament subunit protein influences the structure of crossbridges in reassembled neurofilamentsGOTOW, T; TANAKA, T; NAKAMURA, Y et al.Journal of Cell Science. 1994, Vol 107, pp 1949-1957, issn 0021-9533, 7Article

Mass spectrometric study of NF₃ plasma etching of siliconPERRIN, J; MEOT, J; SIEFERT, J.-M et al.Plasma chemistry and plasma processing. 1990, Vol 10, Num 4, pp 571-587, issn 0272-4324, 17 p.Article

Propagation of nanopores during anodic etching of n-InP in KOHLYNCH, Robert P; QUILL, Nathan; O'DWYER, Colm et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 36, pp 15135-15145, issn 1463-9076, 11 p.Article

Extension of the α particle energy range in polycarbonate using multiple step chemical and/or electrochemical etchingAL-NAJJAR, S. A. R; OLIVEIRA, A; PIESCH, E et al.Radiation protection dosimetry. 1989, Vol 27, Num 1, pp 5-7, issn 0144-8420, 3 p.Article

Fabrication of Low-Adhesive Superhydrophobic Al Surfaces via Self-Assembled Primary Cell Assisted EtchingJINLONG SONG; WENJI XU; ZHUANG FENG et al.Journal of dispersion science and technology. 2013, Vol 34, Num 7-9, pp 908-913, issn 0193-2691, 6 p.Article

Synthesis of nanodot arrays using self-assembled niobium oxide nanopillar mask by reactive ion etchingIK HYUN PARK; JANG WOO LEE; CHEE WON CHUNG et al.Studies in surface science and catalysis. 2006, pp 361-364, issn 0167-2991, isbn 0-444-51733-2, 4 p.Conference Paper

Rôle de la couche cinétique et de la couche de diffusion dans la cinétique des réactions électrochimiques conjuguées au cours de l'attaque du silicium dans le système HNO3-HFIZIDINOV, S. O; SUSKIN, A. M; GAPONENKO, V. I et al.Èlektrohimiâ. 1989, Vol 25, Num 4, pp 479-489, issn 0424-8570Article

Preferential {100} etching of boron-doped diamond electrodes and diamond particles by CO₂ activationJUNFENG ZHANG; NAKAI, Takaaki; UNO, Masaharu et al.Carbon (New York, NY). 2014, Vol 70, pp 207-214, issn 0008-6223, 8 p.Article

Silicon-rich-methacrylate bilayer resist for 193-nm lithographyBLAKENEY, A; GABOR, A; WHITE, D et al.Solid state technology. 1998, Vol 41, Num 6, pp 69-79, issn 0038-111X, 6 p.Article

Thermal and catalytic etching : Mechanisms of metal catalyst reconstructionWEI, T.-C; PHILLIPS, J.Advances in catalysis. 1996, Vol 41, pp 359-421, issn 0360-0564Article

Enhanced silicon etching in nitrogen-containin SF₆-O₂ plasmaPREMACHANDRAN, V.Applied physics letters. 1991, Vol 58, Num 15, pp 1600-1601, issn 0003-6951Article

Critical processing issues for micromachined sacrificial layer etching and sealingBERNEY, H; KEMNA, A; HILL, M et al.Sensors and actuators. A, Physical. 1999, Vol 76, Num 1-3, pp 356-364, issn 0924-4247Conference Paper

Special Issue of the Micromechanics Section of Sensors and Actuators, based on contributions revised from the Technical Digest of the Eleventh IEEE International Workshop on Micro Electro Mechanical Systems (MEMS-98), Heidelberg, Germany, 25-29 January 1998WOOD, J. E.Sensors and actuators. A, Physical. 1999, Vol 73, Num 1-2, issn 0924-4247, 194 p.Serial Issue

A new triplet electrochemical etching (TECE) methodSOHRABI, M.Radiation protection dosimetry. 1993, Vol 48, Num 3, pp 279-283, issn 0144-8420Article

Rate constants for the etching of gallium arsenide by atomic chlorineHA, J. H; OGRYZLO, E. A.Plasma chemistry and plasma processing. 1991, Vol 11, Num 2, pp 311-321, issn 0272-4324Article

Interactive effects in the reactive ion etching of SiGe alloysOEHRLEIN, G. S; ZHANG, Y; KROESEN, G. M. W et al.Applied physics letters. 1991, Vol 58, Num 20, pp 2252-2254, issn 0003-6951Article

Micromachined Clark oxygen electrodeSUZUKI, H; SUGAMA, A; KOJIMA, N et al.Sensors and actuators. B, Chemical. 1993, Vol 10, Num 2, pp 91-98, issn 0925-4005Conference Paper

Surface micromachiningLINDER, C; PARATTE, L; GRETILLAT, M.-A et al.Journal of micromechanics and microengineering (Print). 1992, Vol 2, Num 3, pp 122-132, issn 0960-1317Article

Laser etching of teeth for orthodontic bracket placement : a preliminary clinical studyROBERTS-HARRY, D. P.Lasers in surgery and medicine. 1992, Vol 12, Num 5, pp 467-470, issn 0196-8092Article

Development of techniques for real-time monitoring and control in plasma etching. I, Response surface modeling of CF₄/O₂ and CF₄/H₂ etching of silicon and silicon dioxideMCLAUGHLIN, K. J; BUTLER, S. W; EDGAR, T. F et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 789-799, issn 0013-4651Article

Effects of etching with a mixture of HCI gas and H₂ on the GaAs surface cleaning in molecular-beam epitaxySAITO, J; KONDO, K.Journal of applied physics. 1990, Vol 67, Num 10, pp 6274-6280, issn 0021-8979Article

Use of Ar⁺ plasma etching to localize structural proteins in viruses: studies with adenovirus 2NEWCOMB, W. W; BROWN, J. C.Analytical biochemistry. 1988, Vol 169, Num 2, pp 279-286, issn 0003-2697Article