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Hole mobility in organic single crystal field effect transistorsGOLDMANN, C; KRELLNER, C; PERNSTICH, K. P et al.DRC : Device research conference. 2004, isbn 0-7803-8284-6, 1Vol, p. 229Conference Paper

Electrophotographic layers based on charge transfer systemsVANNIKOV, A. V; KRYUKOV, A. YU.Journal of information recording materials (1985). 1990, Vol 18, Num 5, pp 341-352, issn 0863-0453Article

Highly efficient blue organic light-emitting devices using oligo(phenylenevinylene) dimers as an emitting layerGANG CHENG; FENG HE; YI ZHAO et al.Semiconductor science and technology. 2004, Vol 19, Num 7, pp L78-L80, issn 0268-1242Article

Trap-controlled hopping in doubly doped organic photoreceptor layersVERES, J; JUHASZ, C.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1997, Vol 75, Num 3, pp 377-387, issn 1364-2812Article

Effect of polymer matrices on charge transport in molecularly doped polymersHIRAO, A; NISHIZAWA, H; SUGIUCHI, M et al.Journal of applied physics. 1993, Vol 74, Num 2, pp 1083-1085, issn 0021-8979Article

Hole transport in tri-p-tolylamine-doped bisphenol-A-polycarbonateBORSENBERGER, P. M.Journal of applied physics. 1990, Vol 68, Num 12, pp 6263-6273, issn 0021-8979, 11 p.Article

Lattice mobility of holes in strained and unstrained Si1-xGex alloysMANKU, T; NATHAN, A.IEEE electron device letters. 1991, Vol 12, Num 12, pp 704-706, issn 0741-3106Article

Strained germanium MOSFETs: Devices and process technologyRITENOUR, A; LEE, M. L; LU, N et al.Proceedings - Electrochemical Society. 2004, pp 406-411, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

Drift mobility of monolayer photoreceptor with H2-phthalocyanineOMOTE, A; ITOH, Y; TSUCHIYA, S et al.The Journal of imaging science and technology. 1995, Vol 39, Num 3, pp 271-274, issn 1062-3701Article

Hole mobilities in a hydrazone-doped polycarbonate and poly(styrene)SCHEIN, L. B; BORSENBERGER, P. M.Chemical physics. 1993, Vol 177, Num 3, pp 773-781, issn 0301-0104Article

Transition from disperse to non-dispersive hole transport in poly-N-vinylcarbazole/polycarbonate mixturesULANSKI, J; SIELSKI, J; GLOWACKI, I et al.IEEE transactions on electrical insulation. 1992, Vol 27, Num 4, pp 714-718, issn 0018-9367Conference Paper

Analytical study on hole transport of p-diphenylaminobenzaldehyde-diphenyl hydrazone dispersed molecularly in polymeric matrixKITAMURA, T; YOKOYAMA, M.Japanese journal of applied physics. 1991, Vol 30, Num 5, pp 1015-1019, issn 0021-4922, 1Article

Surface mobility in N+ and P+ doped polysilicon gate PMOS transistorsAMM, D. T; MINGAM, H; DELPECH, P et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 963-968, issn 0018-9383, 6 p.Article

Synthesis and field-effect properties of α,ω-disubstituted sexithiophenes bearing polar groupsDELL'AQUILA, Antonio; MASTRORILLI, Piero; FRANCESCO NOBILE, Cosimo et al.Journal of material chemistry. 2006, Vol 16, Num 12, pp 1183-1191, issn 0959-9428, 9 p.Article

High-mobility doped polymersBORSENBERGER, P. M; GRUENBAUM, W. T; SORRIERO, L. J et al.Japanese journal of applied physics. 1995, Vol 34, Num 12A, pp L1597-L1598, issn 0021-4922, 2Article

Tuning hole transport in a highly dispersed blend of chemically similar polyfluorene copolymersHARDING, M. James; MAHER, Robert C; COHEN, Lesley F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 633314.1-633314.8, issn 0277-786X, isbn 0-8194-6412-0, 1VolConference Paper

In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) SiIRIE, H; KITA, K; KYUNO, K et al.International Electron Devices Meeting. 2004, pp 225-228, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gateCHI ON CHUI; KIM, Hyoungsub; CHI, David et al.IEDm : international electron devices meeting. 2002, pp 437-440, isbn 0-7803-7462-2, 4 p.Conference Paper

Impact ionisation in strained SiGe pMOSFETsNICHOLAS, G; DOBBIE, A; GRASBY, T. J et al.Electronics Letters. 2005, Vol 41, Num 16, pp 925-927, issn 0013-5194, 3 p.Article

Examination of hole mobility in ultra-thin body SOI MOSFETsREN, Zhibin; SOLOMON, Paul M; HAENSCH, Wilfried et al.IEDm : international electron devices meeting. 2002, pp 51-54, isbn 0-7803-7462-2, 4 p.Conference Paper

Hole transport in microcrystalline chlorophyll aKASSI, H; HOTCHANDANI, S; LEBLANC, R. M et al.Applied physics letters. 1993, Vol 62, Num 18, pp 2283-2285, issn 0003-6951Article

Photocarrier generation and transport in σ-bonded polysilanesKEPLER, R. G; ZEIGLER, J. M; HARRAH, L. A et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 6, pp 2818-2822, issn 0163-1829Article

Rapid long-distance hole transfer through consecutive adenine sequenceTAKADA, Tadao; KAWAI, Kiyohiko; FUJITSUKA, Mamoru et al.Journal of the American Chemical Society. 2006, Vol 128, Num 34, pp 11012-11013, issn 0002-7863, 2 p.Article

Localized state effects in polymer thin film transistorsSTREET, R. A; SALLEO, A; CHABINYC, M et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 607-611, issn 0022-3093, 5 p.Conference Paper

Hole transport in polysilanes with diverse side-chain subsztituentsDOHMARU, T; OKA, K; YAJIMA, T et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1995, Vol 71, Num 6, pp 1069-1081, issn 0958-6644Article

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