Pascal and Francis Bibliographic Databases


Search results

Your search

kw.\*:("Movilidad portador carga")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV


A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 4763

  • Page / 191

Selection :

  • and

Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-dopingMIN LI; JUNYING ZHANG; WENQIANG DANG et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 38, pp 16220-16226, issn 1463-9076, 7 p.Article

Simultaneous electron/hole transport in photorefrative materialsVALLEY, G. C.Journal of applied physics. 1986, Vol 59, Num 10, pp 3363-3366, issn 0021-8979Article

Transient electroluminescence from hole transporting emitting layer in nanosecond regionHOSOKAWA, C; TOKAILIN, H; HIGASHI, H et al.Applied physics letters. 1993, Vol 63, Num 10, pp 1322-1324, issn 0003-6951Article

On the accuracy of a particular implementation of the Shannon-Buehler methodGILDENBLAT, G. S.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1857-1858, issn 0018-9383, 2 p., 1Article

Etude du comportement électrique et diélectrique d'une cellule plane avec une électrode écran, remplie d'un diélectrique liquide polaire, soumise à une tension échelon = Slady of the electrical and dielectric behaviour of plane celle with a screening electrode and filled with a polar d: liquid dielectric under a step voltagePIOTROWSKI, K; SLIWINSKA-BARTKOWIAK, M.Journal of electrostatics. 1988, Vol 21, Num 1, pp 45-68, issn 0304-3886Article

Calculation of the mobility of electrons injected in liquid xenonASCARELLI, G.Physical review. B, Condensed matter. 1986, Vol 34, Num 6, pp 4278-4288, issn 0163-1829Article

Millimeter-sized flat crystalline sheet architectures of fullerene assemblies with anisotropic photoconductivitySUKUMARAN SANTHOSH BABU; SAEKI, Akinori; SEKI, Shu et al.PCCP. Physical chemistry chemical physics (Print). 2011, Vol 13, Num 11, pp 4830-4834, issn 1463-9076, 5 p.Article

Field dependence of charge mobility in polymer matrices. Monte Carlo simulation of the escape of a charge carrrier from a dipole trapNOVIKOV, S. V; VANNIKOV, A. V.Chemical physics. 1993, Vol 169, Num 1, pp 21-33, issn 0301-0104Article

Effects of impurities on photocarrier mobility in Bi12SiO20SLUSS, J. J; TAYAG, T. J; BATCHMAN, T. E et al.IEE proceedings. Part J. Optoelectronics. 1992, Vol 139, Num 5, pp 357-360, issn 0267-3932Article

Hole drift mobilities in the glassy state of arylaldehyde and arylketone hydrazonesNISHIMURA, K; INADA, H; KOBATA, T et al.Molecular crystals and liquid crystals (1991). 1992, Vol 216-8, pp 235-242, issn 1056-8816Conference Paper

Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETsUCHIDA, Ken; ZEDNIK, Ricardo; LU, Ching-Huang et al.International Electron Devices Meeting. 2004, pp 229-232, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Charge carrier mobility in poly(p-phenylenevinylene)BRÜTTING, W; LEBEDEV, E; KARG, S et al.SPIE proceedings series. 1998, pp 257-265, isbn 0-8194-2720-9Conference Paper

Modeling of radiation-induced mobility degradation in MOSFETsSTOJADINOVIC, N; GOLUBOVIC, S; DAVIDOVIC, V et al.International conference on microelectronic. 1997, pp 355-356, isbn 0-7803-3664-X, 2VolConference Paper

Détermination du paramètre d'anisotropie de la mobilité dans Si-nFEDOSOV, A. V; TIMOSHCHUK, V. S; YASHCHINSKIJ, L. V et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1704-1705, issn 0015-3222Article

Temperature dependence of electron mobility in (InAs)3(GaAs)1 superlatticesMATSUI, Y; HAYASHI, H; YOSHIDA, K et al.Applied physics letters. 1986, Vol 48, Num 16, pp 1060-1062, issn 0003-6951Article

Charge carrier mobilities in molecular materials for electroluminescent diodesTSUTSUI, T; TOKUHISA, H; ERA, M et al.SPIE proceedings series. 1998, pp 230-239, isbn 0-8194-2720-9Conference Paper

The saturation of the drift velocity of holes at high electric fields in dispersions of electron donors in a polymer matrixVERBEEK, G; VAN DER AUWERAER, M; DE SCHRYVER, F. C et al.Molecular crystals and liquid crystals (1991). 1992, Vol 216-8, pp 243-249, issn 1056-8816Conference Paper

Field dependence of charge mobility in polymer matricesNOVIKOV, S. V; VANNIKOV, A. V.Chemical physics letters. 1991, Vol 182, Num 6, pp 598-602, issn 0009-2614Article

Electroluminescence of a terbium complex with bipolar characterFAN WEI; WANG LIHUI; DING JIANJUN et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 60330I.1-60330I.6, issn 0277-786X, isbn 0-8194-6064-8Conference Paper

Investigation of the proportional difference characteristics of MOSFETsMINGZHEN XU; CHANGHUA TAN; CUNYU YANG et al.International journal of electronics. 2001, Vol 88, Num 4, pp 383-393, issn 0020-7217Article

Sensitive differential method for the extraction of the mobility variation in uniformly degraded MOS transistorsROUX-DIT-BUISSON, O; GHIBAUDO, G; BRINI, J et al.IEE proceedings. Part G. Circuits devices and systems. 1993, Vol 140, Num 2, pp 123-126, issn 0956-3768Article

Photogeneration and transport of charge in vacuum sublimed linear trans-quinacridone layersDI MARCO, P; FATTORI, V; GIRO, G et al.Molecular crystals and liquid crystals (1991). 1992, Vol 216-8, pp 223-229, issn 1056-8816Conference Paper

Engineering model of inversion channel mobility for 60-300 K temperature rangeGILDENBLAT, G. S; HUANG, C.-L.Electronics Letters. 1989, Vol 25, Num 10, pp 634-636, issn 0013-5194, 3 p.Article

On 1/f mobility fluctuations in bipolar transistorsKLEINPENNING, T. G. M.Physica, B + C. 1986, Vol 138, Num 3, pp 244-252, issn 0378-4363Article

Steady-state photocarrier grating technique for diffusion length measurement in photoconductive insulatorsRITTER, D; ZELDOV, E; WEISER, K et al.Applied physics letters. 1986, Vol 49, Num 13, pp 791-793, issn 0003-6951Article

  • Page / 191