VARIABLE SECTION OPTICAL-FIBER DELIVERY SYSTEM OF HIGH-POWER LASER RADIATION FOR SURGICAL USEBRENCI M; FALCIAI R; MAZZONI M et al.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 3; PP. 373-375; BIBL. 6 REF.Article

INFLUENCE MUTUELLE DES PHOTOELEMENTS A LARGE BANDE ET A BANDE ETROITE LORS DU FONCTIONNEMENT DES HETEROPHOTOCONVERTISSEURS EN CASCADES GAASN-ALGAASP-ALGAAS-NALLAKHVERDIEV AM; ZADIRANOV YU M; RUMYANTSEV VD et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 3; PP. 446-448; BIBL. 5 REF.Article

EXTINCTION PAR LE CHAMP DE LA CONDUCTIVITE SUPERFICIELLE ET CONDUCTIVITE PAR SAUTS BIDIMENSIONNELLE DANS INAS PTIMCHENKO IN; SMIRNOVA NN; STUS NM et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 3; PP. 422-425; BIBL. 10 REF.Article

HETEROSTRUCTURES DU SYSTEME AL-GA-AS A LOCALISATION DES REGIONS DE PASSAGE DU COURANTALFEROV ZH I; ANDREEV VM; EGOROV BV et al.1977; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1977; VOL. 47; NO 8; PP. 1782-1790; BIBL. 14 REF.Article

Stability and terrestrial application of a-Si tandem type solar cellsHIROE, A; YAMAGISHI, H; NISHIO, H et al.Photovoltaic specialists conference. 19. 1987, pp 1111-1116Conference Paper

Transport balistique et quasi balistique dans les structures de semiconducteurs. RevueRYZHIJ, V. I; BANNOV, N. A; FEDIRKO, V. A et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 769-786, issn 0015-3222Article

Effect of temperature on the rectification behaviour of Al/Al₂O₃/InTe/Bi sandwich structuresROUSINA, R; SHIVAKUMAR, G. K.Crystal research and technology (1979). 1988, Vol 23, Num 9, pp K137-K138, issn 0232-1300Article

A method for determining the conversion efficiency of multiple-cell photovoltaic devicesGLATFELTER, T; BURDICK, J.Photovoltaic specialists conference. 19. 1987, pp 1187-1193Conference Paper

Enhanced blue response fo top a-Si:H solar cells for tandem structuresKUSIAN, W; KRÜHLER, W; BULLEMER, B et al.Photovoltaic specialists conference. 19. 1987, pp 599-603Conference Paper

High efficiency a-Si: H two-stacked tandem solar cellsYOSHIDA, T; MARUYAMA, K; NABETA, O et al.Photovoltaic specialists conference. 19. 1987, pp 1095-1100Conference Paper

High efficiency thin film tandem PV modulesMITCHELL, K; POTTER, R; ERMER, J et al.Photovoltaic specialists conference. 19. 1987, pp 13-18Conference Paper

Voltage-matched configurations for multijunction solar cellsGEE, J. M.Photovoltaic specialists conference. 19. 1987, pp 536-541Conference Paper

Breakdown in concentration profile diodesGHATOL, A. A; SUNDARSINGH, V. P.International journal of electronics. 1983, Vol 55, Num 4, pp 639-646, issn 0020-7217Article

CARACTERISTIQUES PHOTOELECTRIQUES DES STRUCTURES P-PI -NU -N A BASE DE GAAS(FE)VILISOV AA; GAMAN VI; DIAMANT VM et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 625-628; BIBL. 8 REF.Article

MISE EN EVIDENCE D'UNE INSTABILITE DE L'EFFET PHOTOELECTRIQUE DANS DES STRUCTURES MULTIJONCTIONS MATRICIELLES BASEES SUR DU SILICIUMAGAEV YA; BAZAROV BA; ZADDEH VV et al.1978; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; SUN; DA. 1978; NO 2; PP. 19-23; ABS. ENG; BIBL. 7 REF.Article

SUR LE COEFFICIENT DE VERROUILLAGE D'UNE STRUCTURE P-N-P-NPALKO EH V; UVAROV AI.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 28; NO 11; PP. 2391-2395; BIBL. 9 REF.Article

RELAXATION OF THE EXCESS CONDUCTIVITY IN MULTILAYER STRUCTURES WITH P-N JUNCTIONS.AGAREV VN; STAFEYEV VI.1977; RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1977; VOL. 22; NO 1; PP. 121-127; BIBL. 5 REF.Article

ETUDE DE L'INFLUENCE D'UNE IRRADIATION GAMMA SUR LES STRUCTURES P-N-P-NKORSHUNOV FP; KUL'GACHEV VI; SHUPENEV VA et al.1977; VESCI AKAD. NAVUK B.S.S.R., FIZ.-MAT. NAVUK; S.S.S.R.; DA. 1977; NO 2; PP. 125-126; BIBL. 2 REF.; RESUME DE L'ARTICLE NO. 1742-76 DEPOSE AU VINITI.Article

Multijunction GaAs solar cell without the tunnel junctionSINGH, S. N; PAL, R; SINGH, M et al.SPIE proceedings series. 1998, pp 454-456, isbn 0-8194-2756-X, 2VolConference Paper

Quelques singularités de la caractéristique courant-tension d'une structure p+-π-p+LUK'YANCHENKO, A. I; ORESHKIN, G. I; FETISOV, E. A et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 5, pp 874-877, issn 0015-3222Article

Dependence of I-U characteristics of GaAs n⁺-n-n⁺ diodes on the active region lengthKACIULIS, S; KIBICKAS, K; PARSELIUNAS, J et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp K179-K182, issn 0031-8965Article

CONCENTRATION PROFILING FOR HIGH VOLTAGE P⁺-N-N⁺ DIODESSUNDERSINGH VP; GHATOL AA.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 1; PP. 127-137; BIBL. 11 REF.Article

TRANSPORT DES PORTEURS DANS UNE STRUCTURE P-I-P A HAUT NIVEAU D'INJECTIONPALKO EH V; UVAROV AI.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 4; PP. 791-797; BIBL. 4 REF.Article

00 V AND 5000 A PEAK REVERSE BLOCKING DIODE THYRISTOR.CHU CK; JOHNSON JE; BREWSTER JB et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 537-540; BIBL. 6 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

CARRIER DISTRIBUTION AND LOW-FIELD RESISTANCE IN SHORT N⁺-N^--N⁺ AND N⁺-P^--N⁺ STRUCTURESVAN DER ZIEL A; SHUR MS; LEE K et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 128-137; BIBL. 14 REF.Article