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Pair-groove-substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxyMANNOH, M; YUASA, T; NARITSUKA, S et al.Applied physics letters. 1985, Vol 47, Num 7, pp 728-731, issn 0003-6951Article

Analysis and application of theoretical gain curves to the design of multi-quantum-well lasersMCILROY, P. W. A; KUROBE, A; UEMATSU, Y et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 12, pp 1958-1963, issn 0018-9197Article

The study of multilayer planar optical waveguide structure with nonlinear claddingWU, Yaw-Dong; CHEN, Mao-Hsiung; KUO, Chih-Wen et al.Optical and quantum electronics. 2008, Vol 40, Num 7, pp 495-512, issn 0306-8919, 18 p.Article

Blue shift of the exciton resonance due to exciton-exciton interactions in a multiple-quantum-well structurePEYGHAMBARIAN, N; GIBBS, H. M; JEWELL, J. L et al.Physical review letters. 1984, Vol 53, Num 25, pp 2433-2436, issn 0031-9007Article

Macroscopic quantum coherence and tunnelling in a double well potentialWAXMAN, D.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 15, pp L421-L426, issn 0022-3719Article

A new approach based on the MSEO model to determine the refractive index of multiple quantum wells, with the presence of an electric field perpendicular to the well layers as an aid to QWSC designRAULT, Francis K; ZAHEDI, Ahmad.sans titre. 2002, pp 1047-1050, isbn 0-7803-7471-1, 4 p.Conference Paper

Some design considerations for multi-quantum-well lasersKROEMER, H; OKAMOTO, H.Japanese journal of applied physics. 1984, Vol 23, Num 8, pp 970-974, issn 0021-4922, 1Article

Current blocking layer in GaN light-emitting diodeCHUL HUH; LEE, Ji-Myon; KIM, Dong-Joon et al.SPIE proceedings series. 2001, pp 165-171, isbn 0-8194-4159-7Conference Paper

Optical beam characteristics of Schottky barrier confined arrays of phase-coupled multiquantum well GaAs lasersVAN DER ZIEL, J. P; MIKULYAK, R. M; TEMKIN, H et al.IEEE journal of quantum electronics. 1984, Vol 20, Num 11, pp 1259-1266, issn 0018-9197Article

1.55 μm Polarization-Insensitive high-gain tensile-strained-barrier MQW optical amplifierMAGARI, K; OKAMOTO, M; NOGUCHI, Y et al.IEEE photonics technology letters. 1991, Vol 3, Num 11, pp 998-1000Article

Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disorderingYANG, Y. J; LO, Y. C; LEE, G. S et al.Applied physics letters. 1986, Vol 49, Num 14, pp 835-837, issn 0003-6951Article

Picosecond dynamics of electron-hole plasma in GaAs/AlAs multiple quantum well structureTANAKA, S; KUNO, M; YAMAMOTO, A et al.Japanese journal of applied physics. 1984, Vol 23, Num 6, pp L427-L429, issn 0021-4922, 2Article

The extra differential gain enhancement in multiple-quantum-well lasersZHAO, B; CHEN, T. R; YARIV, A et al.IEEE photonics technology letters. 1992, Vol 4, Num 2, pp 124-126Article

Calculation of lasing gain and threshold current in GaAs-AlGaAs multi-quantum-well lasersYAMADA, M; TABATA, T; OGITA, S et al.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1985, Vol 68, Num 2, pp 102-108, issn 0387-236XArticle

Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25°C to 95°C operating rangeGOOSSEN, K. W; CUNNINGHAM, J. E; JAN, W. Y et al.IEEE photonics technology letters. 1993, Vol 5, Num 2, pp 181-183, issn 1041-1135Article

Enhancement of electron capture efficiency in MQW structuresSAFONOV, Ivan M; KLYMENKO, Mykhailo V; SUKHOIVANOV, Igor A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61841K.1-61841K.8, issn 0277-786X, isbn 0-8194-6240-3, 1VolConference Paper

Electric field effects in AlGaAs-GaAs symmetric and asymmetric coupled quantum wellsJUANG, C; KUHN, K. J; DARLING, R. B et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 9, pp 2122-2128, issn 0018-9197Article

The design and application of III-V multiquantum well optical modulatorsPARRY, G; WHITEHEAD, M; STEVENS, P et al.Physica scripta. T. 1991, Vol 35, pp 210-214, issn 0281-1847Conference Paper

Disorder-induced buried-stripe optical waveguides in GaAs/AlGaAs MQW materialWEISS, B. L; WISMAYER, A. C; ROBERTS, J et al.Electronics Letters. 1989, Vol 25, Num 10, pp 653-655, issn 0013-5194, 3 p.Article

Dynamic characteristics of phase-locked multiple quantum well injection lasersELLIOTT, R. A; DE FREEZ, R. K; PAOLI, T. L et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 6, pp 598-602, issn 0018-9197Article

Photoluminescence due to exciton-exciton scattering in a GaAs/AlAs multiple quantum wellHIRAO, T; HASEGAWA, T; NAKAYAMA, M et al.Journal of luminescence. 2008, Vol 128, Num 5-6, pp 960-962, issn 0022-2313, 3 p.Conference Paper

Growth and characterization of quaternary AlInGaN multiple quantum wells with different aluminum compositionTONG LIU; SHUJIE JIAO; DONGBO WANG et al.Applied surface science. 2014, Vol 301, pp 178-182, issn 0169-4332, 5 p.Article

The accurate calculation of resonances in multiple-well oscillatorsFERNANDEZ, Francisco M.Journal of physics. A, Mathematical and theoretical (Print). 2008, Vol 41, Num 6, issn 1751-8113, 065202.1-065202.5Article

High device yield and performance of InGaAsP MQW DFB lasers with absorptive gratingPARK, S. S; PARK, S. W; YU, J. S et al.Electronics Letters. 2007, Vol 43, Num 20, pp 1095-1096, issn 0013-5194, 2 p.Article

Small footprint InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodesWITHERS, Nathan J; SMOLYAKOV, Gennady A; HONGJUN CAO et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 646802.1-646802.11, issn 0277-786X, isbn 978-0-8194-6581-8, 1VolConference Paper

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