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Results 1 to 25 of 286

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A rigid band model for recombination in a-Si alloysWANG, T.-H; SEARLE, T. M.Journal of non-crystalline solids. 1996, Vol 198200, pp 280-283, issn 0022-3093, 1Conference Paper

Amorphous silicon optical spectrum analyzer for the visible rangeCAPUTO, D; IRRERA, F; PALMA, F et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1172-1175, issn 0022-3093, 2Conference Paper

Anomalous relaxation in fractal and disordered systemsFUJIWARA, S; YONEZAWA, F.Journal of non-crystalline solids. 1996, Vol 198200, pp 507-511, issn 0022-3093, 1Conference Paper

Atomic force microscopy and scanning tunneling microscopy studies on the growth mechanism of a-Si:H film on graphite substrateMATSUSE, M; TSUBOI, S; ARAKANE, T et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 787-791, issn 0022-3093, 2Conference Paper

Comparison between electrical properties and electronic structure of variously-prepared germanium selenide filmsADRIAENSSENS, G. J; GHEORGHIU, A; SEMENAUD, C et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 675-679, issn 0022-3093, 2Conference Paper

Density of states and photoconductivity light degradation in a-Si:H at different temperaturesMARIUCCI, L; SINNO, G; MINARINI, C et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 482-485, issn 0022-3093, 1Conference Paper

Device-grade SiGe:H alloys prepared by nanometer deposition/H2 plasma annealing methodsXU, J; SHIBA, K; MIYAZAKI, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 582-586, issn 0022-3093, 1Conference Paper

Direct determination of the quadratic electro-optic coefficient in an a-Si:H based waveguideZELIKSON, M; WEISER, K; CHACK, A et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 107-110, issn 0022-3093, 1Conference Paper

Distribution of lifetime of photoluminescence in band-edge modulated a-Si1-xNx:H filmsOGIHARA, C; ISHIMURA, H; KINOSHITA, T et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 255-258, issn 0022-3093, 1Conference Paper

Electric field heated electrons in a-Si:H : new featuresJUSKA, G; ARLAUSKAS, K; KOCKA, J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 202-205, issn 0022-3093, 1Conference Paper

Electrical characterization of visible emitting electroluminescent Schottky diodes based on n-type porous silicon and on highly doped n-type porous polysiliconLAZAROUK, S; BONDARENKO, V; JAGUIRO, P et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 973-976, issn 0022-3093, 2Conference Paper

Electronic structure and light induced degradation of amorphous silicon-germanium alloysZHONG, F; CHEN, C.-C; COHEN, J. D et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 572-576, issn 0022-3093, 1Conference Paper

Enhanced optical absorption in microcrystalline siliconBECK, N; MEIER, J; FRIC, J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 903-906, issn 0022-3093, 2Conference Paper

Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane dischargeIKEDA, T; OSBORNE, I. S; HATA, N et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 987-990, issn 0022-3093, 2Conference Paper

Equilibration in amorphous silicon nitride alloysDUNNETT, B; GIBSON, R. A. G; JONES, D. J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 601-604, issn 0022-3093, 1Conference Paper

Hydrogen in siliconDAVIES, E. A.Journal of non-crystalline solids. 1996, Vol 198200, pp 1-10, issn 0022-3093, 1Conference Paper

Improved stability of a-Si:H fabricated from SiH2Cl2 by ECR hydrogen plasmaAZUMA, M; YOKOI, T; SHIMIZU, I et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 419-422, issn 0022-3093, 1Conference Paper

Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction modelCHIDA, Y; KONDO, M; MATSUDA, A et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1121-1124, issn 0022-3093, 2Conference Paper

Intracavity photothermal measurements of ultralow absorptionHAJIEV, F; MALINOVSKY, I; UGUR, H et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 103-106, issn 0022-3093, 1Conference Paper

Introduction to focused sesssion on anomalous relaxationYONEZAWA, F.Journal of non-crystalline solids. 1996, Vol 198200, pp 503-506, issn 0022-3093, 1Conference Paper

Kinetics and reaction products of the photo-induced solid state chemical reaction between silver and amorphous (As0.33S0.67)100-xTex layersWAGNER, T; VLCEK, M; NEJEZCHLEB, K et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 744-748, issn 0022-3093, 2Conference Paper

Light from Si-nanoparticle systems : A comprehensive viewKOCH, F; PETROVA-KOCH, V.Journal of non-crystalline solids. 1996, Vol 198200, pp 840-846, issn 0022-3093, 2Conference Paper

Light-soaking in a-Si:H films grown by PECVD in undiluted and hydrogen diluted SiH4 + CH4 gas mixturesFATHALLAH, M; GHARBI, R; CROVINI, G et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 490-494, issn 0022-3093, 1Conference Paper

Non-linear hopping transport in band tailsBARANOVSKII, S. D; THOMAS, P.Journal of non-crystalline solids. 1996, Vol 198200, pp 140-145, issn 0022-3093, 1Conference Paper

Non-linear optical properties of porous siliconKANEMITSU, Y; MATSUMOTO, T; MIMURA, H et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 977-980, issn 0022-3093, 2Conference Paper

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