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CHANGES IN THICKNESS AND INFRARED SPECTRUM OF PHOSPHOSILICATE GLASS FILM WITH HEAT-TREATMENT IN H₂ GASTAKEUCHI H; MUROTA J.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 3; PP. 752-754; BIBL. 6 REF.Article

ARSENIC DOPING OF CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON USING SIH₄-H₂-ASH₃ GAS SYSTEMMUROTA J; ARAI E; KUDO K et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1188-1192; BIBL. 22 REF.Article

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STEPPED ELECTRODE TRANSISTOR: SET.SAKAI T; SUNOHARA Y; SAKAKIBARA Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 43-46; BIBL. 1 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

SiGe : materials, processing, and devices (Honolulu HI, 3-8 October 2004)Harame, D; Boquet, J; Cressler, J et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-420-9, XVII, 1195 p, isbn 1-56677-420-9Conference Proceedings

From ambient intelligence to silicon process technologyVAN DER POEL, C. J.Proceedings - Electrochemical Society. 2003, pp 7-14, issn 0161-6374, isbn 1-56677-376-8, 8 p.Conference Paper

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FeRAM technology: Today and futureKUNISHIMA, Iwao; NAGEL, Nicolas.Proceedings - Electrochemical Society. 2003, pp 149-151, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Differential silicide thickness for ULSI scalingTAYLOR, William J; SMITH, James; NGUYEN, Jen-Yee et al.Proceedings - Electrochemical Society. 2003, pp 278-287, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

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A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTORTANIMOTO M; MUROTA J; OHMORI Y et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 517-520; BIBL. 7 REF.Article

Trench coverage characteristics of polysilicon deposited by thermal decomposition of silaneMORIE, T; MUROTA, J.Japanese journal of applied physics. 1984, Vol 23, Num 7, pp L482-L484, issn 0021-4922Article

RELATIONSHIP BETWEEN TOTAL ARSENIC AND ELECTRICALLY ACTIVE ARSENIC CONCENTRATIONS IN SILICON PRODUCED BY THE DIFFUSION PROCESSMUROTA J; ARAI E; KOBAYASHI K et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 804-808; BIBL. 19 REF.Article

Low-temperature epitaxial growth of Si/Si_1-xGe_x/Si heterostructure by chemical vapor deposition : Silicon molecular beam epitaxyMUROTA, J; ONO, S.Japanese journal of applied physics. 1994, Vol 33, Num 4B, pp 2290-2299, issn 0021-4922, 1Conference Paper

Molybdenum film formation by low pressure chemical vapor deposition = Formation de couches de molybdène par dépôt chimique en phase vapeur à basse pressionYASUDA, K; MUROTA, J.Japanese journal of applied physics. 1983, Vol 22, Num 10, pp L615-L617, issn 0021-4922Article

CARRIER CONCENTRATION AND HALL MOBILITY IN HEAVILY ARSENIC-DIFFUSED SILICONMATSUMOTO S; NIIMI T; MUROTA J et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 7; PP. 1650-1652; BIBL. 9 REF.Article

Electrodeposition of low-dimensional phases on au studied by EQCM and XRDSHANNON, Curtis.Proceedings - Electrochemical Society. 2003, pp 489-490, issn 0161-6374, isbn 1-56677-376-8, 2 p.Conference Paper

DRAM technology for 100NM and beyondKÜSTERS, K. H; ALSMEIER, J; FAUL, J et al.Proceedings - Electrochemical Society. 2003, pp 123-132, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper