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Results 1 to 25 of 3130

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HIGH-PERFORMANCE NMOS OPERATIONAL AMPLIFIERSENDEROWICZ D; HODGES DA; GRAY PR et al.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 6; PP. 760-766; BIBL. 9 REF.Article

AMORDNUNG FUER SPEKTRALE RAUSCHUNTERSUCHUNGEN ZWISCHEN 30 MHZ UND 400 MHZ BEI IMPULSARTIG BELASTETEN HALBLEITERN = SYSTEME POUR L'ANALYSE SPECTRALE DU BRUIT ENTRE 30 MHZ ET 400 MHZ SUR DES SEMICONDUCTEURS EXCITES PAR IMPULSIONSSACHSE K.1979; ARCH. ELEKTROTECH.; DEU; DA. 1979; VOL. 61; NO 2; PP. 123-128; ABS. ENG; BIBL. 4 REF.Article

OHMIC CONTACTS IN GAASYODER MN.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 2; PP. 117-119; BIBL. 17 REF.Article

CALCULATOR-AIDED EVALUATION OF INTEGRATED N-M.O.S. OPERATIONAL AMPLIFIERSSALEH N; TEWFICK S.1980; I.E.E. PROC., G; GBR; DA. 1980; VOL. 127; NO 2; PP. 67-74; BIBL. 9 REF.Article

HALBLEITERSPEICHER U215D UND U225D = LES MEMOIRES SEMICONDUCTRICES U215D ET U225DKOEHLER T; MUENZER BG.1983; RADIO FERNSEHEN ELEKTRONIK; ISSN 0033-7900; DDR; DA. 1983; VOL. 32; NO 1; PP. 18-20; BIBL. 2 REF.Article

MINORITY-HOLE DIFFUSION COEFFICIENT IN AN N-TYPE HEAVILY DOPED SEMICONDUCTOR REGION OF SILICON DEVICESVAN CONG H; CHARAR S; BRUNET S et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. 697-702; ABS. FRE; BIBL. 10 REF.Article

MONTE CARLO PARTICLE SIMULATION OF N-TYPE GAAS FIELD-EFFECT TRANSISTORS WITH A P-TYPE BUFFER LAYERSANGHERA GS; CHRYSSAFIS A; MOGLESTUE C et al.1980; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1980; VOL. 127; NO 4; PP. 203-206; BIBL. 9 REF.Article

INVESTIGATIONS OF ELECTROLUMINESCENT JUNCTIONS IN ZNSEPAPADOPOULO AC; GED P.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 8; PP. 1206-1209; BIBL. 20 REF.Article

SURFACE-INDUCED VALLEY-SPLITTING IN N-CHANNEL (001) SILICON-MOS CHARGE LAYERNAKAYAMA M; SHAM LJ.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 28; NO 5; PP. 393-396; BIBL. 10 REF.Article

PHOTORECEPTEUR DE STRUCTURE DE BASE AU-SIN-SIP DONT LE SIGNE DU PHOTOCOURANT DEPEND DE LA LONGUEUR D'ONDE DE LA LUMIEREVAKAROVA IS; GUTKIN AA; DMITRIEV MV et al.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 4; PP. 776-780; BIBL. 11 REF.Article

STRESS EFFECT OF AG-N-TYPE SI SCHOTTKY-BARRIER DIODEKOBAYASHI Y.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 993-995; BIBL. 9 REF.Article

NEW MILLIMETER AND SUBMILLIMETER WAVE DETECTING SYSTEM UTILIZING N-INSB ELECTRONIC BOLOMETER.NAKAJIMA F; KOBAYASHI M; NARITA SI et al.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; NO 1; PP. 149-153; BIBL. 8 REF.Article

INSTALLATION POUR LES MESURES HALL DANS LES CHAMPS ELECTRIQUES FORTSDOBROVOL'SKIJ VN; ZHARKIKH YU S; KROLEVETS AN et al.1978; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1978; NO 2; PP. 230-231; BIBL. 2 REF.Article

CARACTERISTIQUES DE JONCTIONS PN DANS INP TYPE N)AGAEV YA; GAZAKOV O; ATABAEV KH et al.1977; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; S.S.S.R.; DA. 1977; NO 1; PP. 20-24; ABS. TURKM. ANGL.; BIBL. 5 REF.Article

DESIGN FEATURES AND PERFORMANCE OF A 64-KBIT MOS DYNAMIC RANDOM ACCESS MEMORY = CARACTERISTIQUES DE LA STRUCTURE ET PERFORMANCES D'UNE MEMOIRE MOS DYNAMIQUE A ACCES SELECTIF D'UNE CAPACITE DE 64 KILOBITSWEIDLICH R.1982; SIEMENS FORSCH.-ENTWICKLUNGSBER.; ISSN 0370-9736; DEU; DA. 1982; VOL. 11; NO 3; PP. 120-126; BIBL. 3 REF.Article

A COMPATIBLE NMOS, CMOS METAL GATE PROCESSSCHNEIDER J; ZIMMER G; HOEFFLINGER B et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 7; PP. 832-836; BIBL. 7 REF.Article

FORMATION D'UNE INSTABILITE LORS DU DEVELOPPEMENT LOCALISE DE LA CONDUCTIVITE DIFFERENTIELLE NEGATIVE DE TYPE N PAR DERIVE ET CONCENTRATIONPROKHOROV EF.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 8; PP. 1396-1398; BIBL. 7 REF.Article

N-CHANNEL MOSFETS WITH WSI2 GATEFARROKH MOHAMMADI; SARASWAT KC.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 2; PP. 24-25; BIBL. 9 REF.Article

DEGRADATION BEHAVIOUR OF N-CHANNEL M.O.S.F.E.T.S OPERATED AT 77 KDAVIS JR.1980; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1980; VOL. 127; NO 4; PP. 183-187; BIBL. 16 REF.Article

ELECTRON DYNAMICS IN P-SI M.O.S.F.E.T. INVERSION CHANNELSZIMMERMANN J; FAUQUEMBERGUE R; CHAREF M et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 17; PP. 664-666; BIBL. 10 REF.Article

LOW-POWER EE-PROM CAN BE REPROGRAMMED FASTSHELTON EK.1980; ELECTRONICS; USA; DA. 1980; VOL. 53; NO 17; PP. 89-92Article

UNTERSUCHUNGEN AN DOPPEL-SFETS = RECHERCHE SUR LES TRANSISTORS DOUBLES A EFFET DE CHAMP ET A COUCHE D'ARRETKUPFER K.1979; RADIO FERNSEHEN ELEKTRON.; DDR; DA. 1979; VOL. 28; NO 6; PP. 383-384; BIBL. 2 REF.Article

TEMPERATURE ANOMALIES OF SCHOTTKY-BARRIER DIODES ON N-TYPE SILICON.JAGER D; KASSING R.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4413-4414; BIBL. 12 REF.Article

AMELIORATIONS DU PROCEDE ILO. PROCEDE SUBILO.DE BREBISSON M.1975; DGRST-7470403; FR.; DA. 1975; PP. (93P.); (RAPP. FINAL, ACTION CONCERTEE: C.C.M.). 2 FASCReport

PERFORMANCE, OF A FAST ATOM BOMBARDMENT SOURCE ON A QUADRUPOLE MASS SPECTROMETERCAPRIOLI RM; BECKNER CF; SMITH LA et al.1983; BIOMEDICAL MASS SPECTROMETRY; ISSN 0306-042X; GBR; DA. 1983; VOL. 10; NO 2; PP. 94-97; BIBL. 7 REF.Article

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