HIGH-PERFORMANCE NMOS OPERATIONAL AMPLIFIERSENDEROWICZ D; HODGES DA; GRAY PR et al.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 6; PP. 760-766; BIBL. 9 REF.Article

OHMIC CONTACTS IN GAASYODER MN.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 2; PP. 117-119; BIBL. 17 REF.Article

CALCULATOR-AIDED EVALUATION OF INTEGRATED N-M.O.S. OPERATIONAL AMPLIFIERSSALEH N; TEWFICK S.1980; I.E.E. PROC., G; GBR; DA. 1980; VOL. 127; NO 2; PP. 67-74; BIBL. 9 REF.Article

HALBLEITERSPEICHER U215D UND U225D = LES MEMOIRES SEMICONDUCTRICES U215D ET U225DKOEHLER T; MUENZER BG.1983; RADIO FERNSEHEN ELEKTRONIK; ISSN 0033-7900; DDR; DA. 1983; VOL. 32; NO 1; PP. 18-20; BIBL. 2 REF.Article

MINORITY-HOLE DIFFUSION COEFFICIENT IN AN N-TYPE HEAVILY DOPED SEMICONDUCTOR REGION OF SILICON DEVICESVAN CONG H; CHARAR S; BRUNET S et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. 697-702; ABS. FRE; BIBL. 10 REF.Article

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INVESTIGATIONS OF ELECTROLUMINESCENT JUNCTIONS IN ZNSEPAPADOPOULO AC; GED P.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 8; PP. 1206-1209; BIBL. 20 REF.Article

SURFACE-INDUCED VALLEY-SPLITTING IN N-CHANNEL (001) SILICON-MOS CHARGE LAYERNAKAYAMA M; SHAM LJ.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 28; NO 5; PP. 393-396; BIBL. 10 REF.Article

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STRESS EFFECT OF AG-N-TYPE SI SCHOTTKY-BARRIER DIODEKOBAYASHI Y.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 993-995; BIBL. 9 REF.Article

NEW MILLIMETER AND SUBMILLIMETER WAVE DETECTING SYSTEM UTILIZING N-INSB ELECTRONIC BOLOMETER.NAKAJIMA F; KOBAYASHI M; NARITA SI et al.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; NO 1; PP. 149-153; BIBL. 8 REF.Article

INSTALLATION POUR LES MESURES HALL DANS LES CHAMPS ELECTRIQUES FORTSDOBROVOL'SKIJ VN; ZHARKIKH YU S; KROLEVETS AN et al.1978; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1978; NO 2; PP. 230-231; BIBL. 2 REF.Article

CARACTERISTIQUES DE JONCTIONS PN DANS INP TYPE N)AGAEV YA; GAZAKOV O; ATABAEV KH et al.1977; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; S.S.S.R.; DA. 1977; NO 1; PP. 20-24; ABS. TURKM. ANGL.; BIBL. 5 REF.Article

PERFORMANCE, OF A FAST ATOM BOMBARDMENT SOURCE ON A QUADRUPOLE MASS SPECTROMETERCAPRIOLI RM; BECKNER CF; SMITH LA et al.1983; BIOMEDICAL MASS SPECTROMETRY; ISSN 0306-042X; GBR; DA. 1983; VOL. 10; NO 2; PP. 94-97; BIBL. 7 REF.Article

1/F NOISE IN SILICON WAFERSBLACK RD; WEISSMAN MB; RESTLE PJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6280-6285; BIBL. 26 REF.Article

A HIGH-DENSITY, HIGH-PERFORMANCE EEPROM CELLSCHAVER H; LUAN VAN TRAN; SMITH L et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1178-1185; BIBL. 19 REF.Article

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STATISCHER 1024-BIT-SPEICHER U 202D = MEMOIRE STATIQUE A 1024 BITS U202 DLANDGRAF DIETZ D.1980; RADIO FERNSEHEN ELEKTRON.; DDR; DA. 1980; VOL. 29; NO 1; PP. 21-23Article

A 16 KBIT ELECTRICALLY ERASABLE PROM USING N-CHANNEL SI-GATE MNOS TECHNOLOGYHAGIWARA T; YATSUDA Y; KONDO R et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 346-353; BIBL. 13 REF.Article

A HIGH-SPEED NMOS A/D-CONVERTER WITH A CURRENT SOURCE ARRAYPOST HU; WALDSCHMIDT K.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 295-301; BIBL. 10 REF.Article

Les amplificateurs opérationnels NMOS = The NMOS operational amplifierBAILLIEU, F; CONCINA, S; DUPRE, F et al.Onde électrique. 1983, Vol 63, Num 11, pp 7-23, issn 0030-2430Article

FABRICATION OF SI MOSFET'S USING NEUTRON-IRRADIATED SILICON AS SEMI-INSULATING SUBSTRATEHO VQ; SUGANO T.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 117-121; BIBL. 10 REF.Article

STUDY OF N-GAAS MOS DIODES WITH SPIN-ON SIO₂ LAYERSENGUPTA D; VIKRAM KUMAR.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. K279-K282; BIBL. 14 REF.Article

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