Comment on second-order piezoresistance coefficients of n-type siliconOHMURA, Y; MORINAGA, W.Japanese journal of applied physics. 1996, Vol 35, Num 3A, pp L280-L281, issn 0021-4922, 2Article

Different morphology aspects of n-type porous siliconBUCHIN, E. YU; CHURILOV, A. B; PROKAZNIKOV, A. V et al.Applied surface science. 1996, Vol 102, pp 431-435, issn 0169-4332Conference Paper

Self-induced birefringence of infrared light in n-GeVASETSKII, V. M; POROSHIN, V. N; SARBEY, O. G et al.Physical review letters. 1993, Vol 71, Num 18, pp 3027-3030, issn 0031-9007Article

Hydrogen passivation of donors and hydrogen states in heavily doped n-type siliconFUKATA, N; SASAKI, S; FUJIMURA, S et al.Japanese journal of applied physics. 1996, Vol 35, Num 7, pp 3937-3941, issn 0021-4922, 1Article

High-resistivity n-type silicon prepared by Czochralski growth and untraditional dopingSAL'NIK, Z. A.Inorganic materials. 1998, Vol 34, Num 3, pp 197-200, issn 0020-1685Article

Diffusivity and surface transition rate of positrons in crystalline silicon as a function of dopant concentrationBAUER-KUGELMANN, W; DUFFY, J. A; STÖRMER, J et al.Applied surface science. 1997, Vol 116, pp 231-235, issn 0169-4332Conference Paper

Modelling of n-type CdTe photoluminescence variation with polarization : a probe of the shift of semiconductor band edgesGERARD, I; IRANZO-MARIN, F; VIGNERON, J et al.Journal of electroanalytical chemistry (1992). 1996, Vol 401, Num 1-2, pp 57-63, issn 1572-6657Article

Electron and hole capture kinetics at gold-hydrogen complexes in n-type siliconDAVIDSON, J. A; EVANS, J. H.Semiconductor science and technology. 1996, Vol 11, Num 11, pp 1704-1712, issn 0268-1242Article

Ion-implanted n-type diamond: electrical evidencePRINS, J. F.Diamond and related materials. 1995, Vol 4, Num 5-6, pp 580-585, issn 0925-9635Conference Paper

Brillouin instability in longitudinally magnetized crystals with high dielectric constantGADKARI, P; GHOSH, S.Physica status solidi. B. Basic research. 1992, Vol 172, Num 2, pp 709-718, issn 0370-1972Article

Characteristics of electron trap induced in n-InP by hydrogen plasma exposureSUGINO, T; NINOMIYA, H; MATSUDA, K et al.Japanese journal of applied physics. 1994, Vol 33, Num 3A, pp L267-L270, issn 0021-4922, 2Article

The electric current in a magnetized semiconducting plate with earthed side wallsKRUTITSKAYA, N. C; KRUTITSKII, P. A.Computational mathematics and mathematical physics. 1994, Vol 34, Num 1, pp 71-83, issn 0965-5425Article

Sputtering of semiconductive TiO₂ thin films and evaluation of their sensitivity to NO gasKUWANO, S; ITOH, Y; HATAKEYAMA, Y et al.Hyomen gijutsu. 1994, Vol 45, Num 8, pp 800-804, issn 0915-1869Article

Influence of heat cycling on fundamental absorption in gallium arsenideMETOLIDI, E. N; STARODUBOV, YA. D; KOVTUN, G. P et al.Physics of the solid state. 1993, Vol 35, Num 2, pp 208-209, issn 1063-7834Article

Anisotropy of electrical conductivity in indium selenideSAVITSKII, P. I; KOVALYUK, Z. D; MINTYANSKII, I. V et al.Inorganic materials. 1996, Vol 32, Num 4, pp 361-365, issn 0020-1685Article

Polarization memory induced by polarized light-assisted anodization of n-type SiPOLISSKI, G; ANDRIANOV, A. V; KOVALEV, D et al.Thin solid films. 1996, Vol 276, Num 1-2, pp 235-237, issn 0040-6090Conference Paper

Sublinear photoconductivity in n-type a-SiH : analysis and computer modellingMAIN, C; DICK, F; REYNOLDS, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 263-266, issn 0022-3093, 1Conference Paper

Low-temperature Si epitaxy by photochemical vapor deposition with SiH₂Cl₂OSHIMA, T; ALONSO, J. C; YAMADA, A et al.Japanese journal of applied physics. 1994, Vol 33, Num 2A, pp L153-L155, issn 0021-4922, 2Article

The effect of impurities on the ideal tensile strength of siliconHUANG, Y. M; SPENCE, J. C. H; SANKEY, O. F et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1994, Vol 70, Num 1, pp 53-62, issn 0141-8610Article

Thermoelectric power of indium sesquisulphide single crystalsNASSARY, M. M.Crystal research and technology (1979). 1994, Vol 29, Num 7, pp 999-1004, issn 0232-1300Article

Role of H2+ complexes in optimization of n-type InSb mixers in the millimeter wavelength rangeGERSHENZON, E. M; GRACHEV, S. A; LITVAK-GORSKAYA, L. B et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 9, pp 808-810, issn 1063-7826Article

Minority carrier diffusion lengths for high purity liquid phase epitaxial GaAsBUTCHER, K. S. A; ALEXIEV, D; TANSLEY, T. L et al.Australian journal of physics. 1993, Vol 46, Num 2, pp 317-325, issn 0004-9506Article

Investigation of band bending in silicon by slow positron lifetime measurementsDUFFY, J. A; BAUER-KUGELMANN, W; KÖGEL, G et al.Applied surface science. 1997, Vol 116, pp 241-246, issn 0169-4332Conference Paper

Harmonic generation of microwaves in semiconductors in a magnetic fieldPATRA, S. N; BHATTACHARYA, D. P.Physica. B, Condensed matter. 1995, Vol 216, Num 1-2, pp 121-124, issn 0921-4526Article

Cathodoluminescence and electron beam irradiation effect of porous silicon studied by transmission electron microscopyMITSUI, T; YAMAMOTO, N; TAKEMOTO, K et al.Japanese journal of applied physics. 1994, Vol 33, Num 3A, pp L342-L344, issn 0021-4922, 2Article