GAAS, GAP, AND GAAS_1-XP_X FILMS DEPOSITED BY MOLECULAR BEAM EPITAXY.NAGANUMA M; TAKAHASHI K.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 1; PP. 187-200; ABS. ALLEM.; BIBL. 20 REF.Article

IONIZED ZN DOPING OF GAAS MOLECLAR BEAM EPITAXIAL FILMS.NAGANUMA M; TAKAHASHI K.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 342-344; BIBL. 12 REF.Article

A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASBMIYAZAWA S; KONDO S; NAGANUMA M et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 4; PP. 670-674; BIBL. 7 REF.Article

DESORPTION PROPERTIES OF SB ON A GAAS (100) SURFACENAGANUMA M; MIYAZAWA S; IWASAKI H et al.1980; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1980; VOL. 17; NO 2; PP. 606-608; BIBL. 16 REF.Article

MOLECULAR BEAM EPITAXY WITH IONIZED BEAM DOPING.MATSUNAGA N; NAGANUMA M; TAKAHASHI K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 443-449; BIBL. 18 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

GRADED-BANDGAP III-V TERNARY COMPOUND FILMS BY MOLECULAR BEAM EPITAXY.TATEISHI K; NAGANUMA M; TAKAHASHI K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 5; PP. 785-789; BIBL. 12 REF.Article

CORROSION FATIGUE PROPERTIES OF STRUCTURAL STEELWATANABE M; MUKAI Y; NAGANUMA M et al.1974; TECHNOL. REP. OSAKA UNIV.; JAP.; DA. 1974; VOL. 24; NO 1191-1229; PP. 487-494; BIBL. 5 REF.Article

FOLLOW UP STUDY OF CONGENITAL HEART DISEASE = ETUDE LONGITUDINALE DES CARDIOPATHIES CONGENITALESOSHIMA M; NAGANUMA M; MATSUO N et al.1972; JAP. CIRCUL. J.; JAP.; DA. 1972; VOL. 36; NO 8; PP. 819-825; BIBL. 4REF.Serial Issue

CRT MULTI-COLOR GRAPHIC DISPLAYSUDOH T; NAGANUMA M; SENOO T et al.1981; NEC RES. DEV.; ISSN 0048-0436; JPN; DA. 1981; NO 61; PP. 18-23Article

Semiconductor guided-wave spatial photonic switchesNAGANUMA, M; KAWANO, K.NTT review. 1995, Vol 7, Num 5, pp 30-34, issn 0915-2334Article

Lasing mode behavior of a single-mode MQW laser injected with TM polarized lightYASAKA, H; NAGANUMA, M.IEEE journal of quantum electronics. 1993, Vol 29, Num 2, pp 361-367, issn 0018-9197Article

Integrated external-cavity InGaAs/InP lasers using cap-annealing disorderingMIYAZAWA, T; IWAMURA, H; NAGANUMA, M et al.IEEE Photonics technology letters. 1991, Vol 3, Num 5, pp 421-423, 3 p.Article

Initial growth conditions of GaAs on (100) Si grown by migration-enhanced epitaxySTOLZ, W; NAGANUMA, M; HORIKOSHI, Y et al.Japanese journal of applied physics. 1988, Vol 27, Num 3, pp L283-L286, issn 0021-4922, 2Article

Effects of PN-junction on negative differential resistance of InGaAs/InAlAs multiple quantum well resonant tunneling diodesKAWAMURA, Y; ASAI, H; NAGANUMA, M et al.Japanese journal of applied physics. 1990, Vol 29, Num 7, pp L1052-L1054, issn 0021-4922, 2Article

Controlled formation of misfit dislocations for heteroepitaxial growth of GaAs on (100) Si by migration-enhanced epitaxySTOLZ, W; HORIKOSHI, Y; NAGANUMA, M et al.Japanese journal of applied physics. 1988, Vol 27, Num 6, pp L1140-L1143, issn 0021-4922, 2Article

Effects of chronic exposure ultraviolet-A including 2 % ultraviolet-B on free radical reduction systems in hairless miceMAEDA, K; NAGANUMA, M; FUKUDA, M et al.Photochemistry and photobiology. 1991, Vol 54, Num 5, pp 737-740, issn 0031-8655Article

Switching characteristics of InGaAs/InP multiquantum well voltage-controlled bistable laser diodesUENOHARA, H; IWAMURA, H; NAGANUMA, M et al.Japanese journal of applied physics. 1990, Vol 29, Num 12, pp L2442-L2444, issn 0021-4922, 2Article

Compositional disordering of In_0.53Ga_0.47As/InP multiquantum well structures by repetitive rapid thermal annealingMIYAZAWA, T; IWAMURA, H; MIKAMI, O et al.Japanese journal of applied physics. 1989, Vol 28, Num 6, pp L1039-L1041, issn 0021-4922, 2Article

High-speed and low-driving-voltage InGaAs/InAlAs multiquantum well optical modulatorsKOTAKA, J; WAKITA, K; KAWANO, K et al.Electronics Letters. 1991, Vol 27, Num 23, pp 2162-2163, issn 0013-5194Article

Resonant tunneling characteristic in InGaAs/InAlAs MQW diodes with Si-doped quantum wellsKAWAMURA, Y; ASAI, H; WAKITA, K et al.Japanese journal of applied physics. 1989, Vol 28, Num 7, pp L1104-L1107, issn 0021-4922, 2Article

MRI of peripheral nerves and pathology of sural nerves in hereditary motor and sensory neuropathy type IIITACHI, N; KOZUKA, N; OHYA, K et al.Neuroradiology (Berlin. Print). 1995, Vol 37, Num 6, pp 496-499, issn 0028-3940Article

Crosstalk characteristics of a 1.3-μm/1.5-μm wavelength demultiplexing photodetector using laser-assisted MOMBE growthSUZUKI, Y; IGA, R; YAMADA, T et al.Journal of lightwave technology. 1999, Vol 17, Num 3, pp 483-489, issn 0733-8724Article

Semiconductor monolithic wavelength selective router using a grating switch integrated with a directional coupler : Special issue on multiwavelength optical technology and networksSHIBATA, Y; OKU, S; KONDO, Y et al.Journal of lightwave technology. 1996, Vol 14, Num 6, pp 1027-1032, issn 0733-8724Article

Impact ionization rates in an In Ga As/In Al As superlatticeKAGAWA, T; KAWAMURA, Y; ASAI, H et al.Applied physics letters. 1989, Vol 55, Num 10, pp 993-995, issn 0003-6951, 3 p.Article

A study of the phototoxicity of lemon oilNAGANUMA, M; HIROSE, S; NAKAYAMA, Y et al.Archives of dermatological research (Print). 1985, Vol 278, Num 1, pp 31-36, issn 0340-3696Article