au.\*:("NAKAKADO T")
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A NOVEL POLYIMIDE FILM PREPARATION AND ITS PREFERENTIAL-LIKE CHEMICAL ETCHING TECHNIQUES FOR GAAS DEVICESHARADA Y; MATSUMOTO F; NAKAKADO T et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 129-134; BIBL. 6 REF.Article
A quantitative comparison between calculated and measured conversion losses of a novel beam-lead GaAs Schottky-Barrier mixer diode with minimized parasiticsHARADA, Y; HIGASHINO, T; NAKAKADO, T et al.I.E.E.E. transactions on electron devices. 1983, Vol 30, Num 7, pp 860-862, issn 0018-9383Article
A new high electron mobility transistor (HEMT) structure with a narrow quantum well formed by inserting a few monolayers in the channelMATSUMARA, K; INOUE, D; NAKANO, H et al.Japanese journal of applied physics. 1991, Vol 30, Num 2A, pp L166-L169, issn 0021-4922, 2Article
The optimum design of thin film transistors by dynamic characteristics measurementYAMADA, T; OHIMA, S; KIHARA, K et al.Japanese journal of applied physics. 1990, Vol 29, Num 12, pp L2363-L2365, issn 0021-4922, 2Article