au.\*:("NAKHMANSON RS")
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A TECHNIQUE FOR DIRECTLY PLOTTING THE DOPING PROFILE OF SEMICONDUCTOR WAFERS ("8-SHAPED WAY").NAKHMANSON RS.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 1; PP. 87-91; BIBL. 14 REF.Article
HIGH- AND LOW-FREQUENCY STEADY-STATE MIS CAPICITANCENAKHMANSON RS.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 57; NO 2; PP. 515-527; ABS. RUS; BIBL. 10 REF.Article
FREQUENCY DEPENDENCE OF THE PHOTO-EMF OF STRONGLY INVERTED GE AND SI MIS STRUCTURES. I. THEORY.NAKHMANSON RS.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 617-626; BIBL. 7 REF.Article
ON THE THEORY OF MIS CAPACITANCE.NAKHMANSON RS.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 9; PP. 745-758; BIBL. 31 REF.Article
MEASUREMENTS OF SMALL-SIGNAL PHOTO-EMF OF SI AND GE MIS STRUCTURES USING SCANNING LIGHT PROBE.NAKHMANSON RS; POPOV LK.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 46; NO 1; PP. 59-68; ABS. RUSSE; BIBL. 10 REF.Article
CUVE POUR AMINCIR DES PLAQUES DE SILICIUMNAKHMANSON RS; POPOV LK.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 5; PP. 234-235; BIBL. 2 REF.Article
ON THE FREQUENCY DEPENDENCE OF THE SURFACE STATE ADMITTANCENAKHMANSON RS; SEVASTIANOV SB.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 57; NO 1; PP. 117-128; ABS. RUS; BIBL. 16 REF.Article
THE CONDUCTION CHANNELS ON MIS AND MIM STRUCTURE SPLITSNAKHMANSON RS; ROIZIN YO.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 55; NO 2; PP. 169-178; BIBL. 10 REF.Article
DISPOSITIF DE CONTACT MAGNETIQUENAKHMANSON RS; ROTMAN SZ.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 1; PP. 227Article
FREQUENCY DEPENDENCE OF PHOTO-EMF OF STRONGLY INVERTED GE AND SI MIS STRUCTURES. II. EXPERIMENTS.NAKHMANSON RS; OVSYUK ZS; POPOV LK et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 627-634; BIBL. 4 REF.Article