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TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION.NAMIZAKI H.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 427-431; BIBL. 10 REF.Article

MONOLITHIC INTEGRATION OF GAAS-(GAAL)AS LIGHT MODULATORS AND DISTRIBUTED-BRAGG-REFLECTOR LASERS.MOHAMMAD KAZEM SHAMS; NAMIZAKI H.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 5; PP. 314-316; BIBL. 7 REF.Article

RECENT DEVELOPMENTS IN FIBER OPTIC DEVICESSHIRAHATA K; SUSAKI W; NAMIZAKI H et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 2; PP. 121-131; BIBL. 92 REF.Article

SPONTANEOUS EMISSION BEHAVIOR IN ALGAAS TJS LASERSNAMIZAKI H; KUMABE H; SUSAKI W et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 5; PP. 799-803; BIBL. 18 REF.Article

FREQUENCY RESPONSE OF GA1-XALXAS LIGHT-EMITTING DIODES.NAMIZAKI H; NAGANO M; NAKAHARA S et al.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 11; PP. 688-691; BIBL. 12 REF.Article

P-N JUNCTION DETECTOR DIRECTLY INTEGRATED WITH (GA1-XALX)AS LOC-DBR LASER.MOHAMMAD KAZEM SHAMS; NAMIZAKI H; SHYH WANG et al.1978; APPL PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 3; PP. 179-181; BIBL. 7 REF.Article

LARGE-OPTICAL-CAVITY GAAS-(GAAL)AS INJECTION LASER WITH LOW-LOSS DISTRIBUTED BRAGG REFLECTORS.NAMIZAKI H; MOHAMMAD KAZEM SHAMS; SHYH WANG et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 2; PP. 122-124; BIBL. 11 REF.Article

LONG LIVED SINGLE MODE JUNCTION-UP TJS LASERS BY IMPROVING ELECTRON INJECTION EFFICIENCYSUSAKI W; TAKAMIYA S; NAMIZAKI H et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; PP. 4.5.1-4.5.4; BIBL. 5 REF.Conference Paper

HIGH-POWER-DENSITY SINGLE-MODE OPERATION OF GAAS-GAALAS TJS LASERS UTILIZING SI3N4 PLASMA DEPOSITION FOR FACET COATINGNAMIZAKI H; TAKAMIYA S; ISHII M et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3743-3745; BIBL. 14 REF.Article

CHARACTERISTICS OF THE JUNCTION-STRIPE-GEOMETRY GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS.NAMIZAKI H; KAN H; ISHII M et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1618-1623; BIBL. 7 REF.Article

IN GAASP/INP BURIED CRESCENT LASER EMITTING AT 1.3 MU M WITH VERY LOW THRESHOLD CURRENTMUROTANI T; OOMURA E; HIGUCHI H et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 14; PP. 566-568; BIBL. 8 REF.Article

TRANSVERSE-JUNCTION-STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE LASERS WITH VERY LOW THRESHOLD CURRENT.NAMIZAKI H; KAN H; ISHII M et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 6; PP. 2785-2786; BIBL. 4 REF.Article

HIGH TEMPERATURE SINGLE-MODE CW OPERATION WITH A JUNCTION-UP TJS LASERKUMABE H; TANAKA T; NAMIZAKI H et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 38-39; BIBL. 11 REF.Article

CONTINUOUS OPERATION OVER 10000 H OF GAAS/GAALAS DOUBLE-HETEROSTRUCTURE LASER WITHOUT LATTICE MISMATCH COMPENSATION.KAN H; NAMIZAKI H; ISHII M et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 3; PP. 138-139; BIBL. 6 REF.Article

TRANSVERSE MODE CONTROL IN INGAASP/INP BURIED CRESCENT DIODE LASERSOOMURA E; HIGUCHI H; HIRANO R et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 2; PP. 83-84; BIBL. 9 REF.Article

DEGRADATION MECHANISM IN 1.3 MU M INGAASP/INP BURIED CRESCENT LASER DIODE AT A HIGH TEMPERATUREOOMURA E; HIGUCHI H; HIRANO R et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 11; PP. 407-408; BIBL. 4 REF.Article

SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF ITH AND ETA EX IN 1.3 MU M IN GAASP DH LASERSNAMIZAKI H; HIRANO R; HIGUCHI H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 703-705; BIBL. 6 REF.Article

Stress compensation in laser diodesKOYAMA, H; NISHIOKA, T; ISSHIKI, K et al.Applied physics letters. 1983, Vol 43, Num 8, pp 733-735, issn 0003-6951Article

Hydrogen passivation of polysilicon thin-fhilm transistors by electron cyclotron resonance plasmaBAERT, K; MURAI, H; KOBAYASHI, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 6A, pp 2601-2606, issn 0021-4922, 1Article

Dark current and diffusion length in InGaAs photodiodes grown on GaAs substratesISHIMURA, E; KIMURA, T; SHIBA, T et al.Applied physics letters. 1990, Vol 56, Num 7, pp 644-646, issn 0003-6951Article

Aging behavior and surge endurance of 870-900 nm AlGaAs lasers with nonabsorbing mirrorsKADOTA, Y; CHINO, K; ONODERA, Y et al.IEEE journal of quantum electronics. 1984, Vol 20, Num 11, pp 1247-1251, issn 0018-9197Article

High-power high-reliability operation of 1.3-μm p-substrate buried crescent laser diodesNAKAJIMA, Y; HIGUCHI, H; KOKUBO, Y et al.Journal of lightwave technology. 1987, Vol 5, Num 9, pp 1263-1268, issn 0733-8724Article

Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor depositionISSHIKI, K; KANENO, N; KUMABE, H et al.Journal of lightwave technology. 1986, Vol 4, Num 10, pp 1475-1481, issn 0733-8724Article

High temperature CW operation of p-substrate buried crescent laser diode emitting at 1.3 μmSAKAKIBARA, Y; OOMURA, E; HIGUCHI, H et al.Electronics Letters. 1984, Vol 20, Num 19, pp 761-762, issn 0013-5194Article

Screening of long-wavelength laser at high temperature and high current levelsHIGUCHI, H; OOMURA, E; HIRANO, R et al.Electronics Letters. 1983, Vol 19, Num 23, pp 976-977, issn 0013-5194Article

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