X-RAY TOPOGRAPHIC STUDY OF DISLOCATION-FREE NIOBIUM SINGLE CRYSTAL DEFORMED AT 180 KNARAMOTO H.1978; SCRIPTA METALLURG.; USA; DA. 1978; VOL. 12; NO 11; PP. 1027-1030; BIBL. 10 REF.Article

GROWTH OF NIOBIUM SINGLE CRYSTALS BY PULLING FROM A MELT ON A PEDESTAL. III: CHARACTERISTIC ARRANGEMENT OF DISLOCATIONSNARAMOTO H.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 4; PP. 475-482; BIBL. 18 REF.Article

LOCATION AND DEPTH PROFILING OF NE ATOMS IMPLANTED IN A NB CRYSTAL USING A RESONANT NUCLEAR REACTIONNARAMOTO H; OZAWA K.1981; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1981; VOL. 89; NO 4; PP. 175-178; BIBL. 9 REF.Article

BLISTER FORMATION IN A NIOBIUM SINGLE CRYSTAL ON NE⁺ ION BOMBARDMENT.NARAMOTO H; KAMADA K.1978; J. MATER. NUCL.; NLD; DA. 1978; VOL. 74; NO 1; PP. 186-189Article

FLAKING AND BLISTERING ON HE AND NE BOMBARDMENTS = FORMATION DE FLOCONS ET DE BOURSOUFLURES SUR L'IRRADIATION PAR HE ET NEKAMADA K; NARAMOTO H.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 42; NO 3-4; PP. 209-216; BIBL. 17 REF.Article

STRAIN PROFILE OF PLASTIC ZONE IN DISLOCATION-FREE NIOBIUM SINGLE CRYSTAL DETERMINED BY X-RAY TOPOGRAPHYNARAMOTO H; KAMADA K.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 11; PP. 1915-1923; BIBL. 13 REF.Article

GROWTH OF NIOBIUM SINGLE CRYSTALS BY PULLING FROM A MELT ON A PEDESTAL. II. GROWTH OF DISLOCATION-FREE CRYSTALS.NARAMOTO H; KAMADA K.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 2; PP. 145-150; BIBL. 15 REF.Article

TEMPERATURE DEPENDENCE OF TOTAL FREE ENERGY OF ACTIVATION FOR DISLOCATION MOTION. II. COPPER CRYSTALS AFTER IRRADIATION WITH NEARLY MONO-ENERGETIC NEUTRONSKAMADA K; YOSHIZAWA I; NARAMOTO H et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 545-549; ABS. ALLEM.; BIBL. 20 REF.Article

TEMPERATURE DEPENDENCE OF TOTAL FREE ENERGY OF ACTIVATION FOR DISLOCATION MOTION. I. COPPER CRYSTALS AFTER ELECTRON IRRADIATIONKAMADA K; YOSHIZAWA I; NARAMOTO H et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 1; PP. 231-239; ABS. ALLEM.; BIBL. 24 REF.Article

CELL FORMATION AND INTERFACIAL INSTABILITY IN LASER-ANNEALED SI-ZN AND SI-SB ALLOYSNARAYAN J; NARAMOTO H; WHITE CW et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 912-915; BIBL. 9 REF.Article

ROOM TEMPERATURE AGING EFFECTS OF BLISTERING AND SURFACE ROUGHENING AFTER AR⁺ ION BOMBARDMENT ON MO SINGLE CRYSTALS.KAMADA K; NARAMOTO H; KAZUMATA Y et al.1978; J. MATER. NUCL.; PAYS-BAS; DA. 1978; VOL. 71; NO 2; PP. 249-255; ABS. FR. ALLEM.; BIBL. 14 REF.Article

HARDENING OF KBR BY HEAVY GAMMA IRRADIATION AT LNTNARAMOTO H; OZAWA K; OKADA T et al.1973; PHYS. LETTERS, A; NETHERL.; DA. 1973; VOL. 43; NO 2; PP. 95-96; BIBL. 6 REF.Serial Issue

Epitaxial growth of rutile films on Si (100) substrates by thermal oxidation of evaporated titanium films in argon fluxDAI, Z; NARAMOTO, H; NARUMI, K et al.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 43, pp 8511-8516, issn 0953-8984Article

AFM observation of nanosized SiC dots prepared by ion beam depositionXU, Y; NARUMI, K; MIYASHITA, K et al.Surface and interface analysis. 2003, Vol 35, Num 1, pp 99-103, issn 0142-2421, 5 p.Article

Subsurface modification and relative optical density of synthetic diamondMA, Z; ZHENG, Y; NARAMOTO, H et al.Applied surface science. 1997, Vol 119, Num 3-4, pp 181-184, issn 0169-4332Article

Structural change of a hydrogenated carbon film upon heatingZHANG, Z. J; NARUMI, K; NARAMOTO, H et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 22, pp L475-L481, issn 0953-8984Article

Buckling instability in amorphous carbon filmsZHU, X. D; NARUMI, K; NARAMOTO, H et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 23, issn 0953-8984, 236227.1-236227.6Article

Preparation of epitaxial TiO₂ films by pulsed laser deposition techniqueYAMAMOTO, S; SUMITA, T; SUGIHARUTO et al.Thin solid films. 2001, Vol 401, Num 1-2, pp 88-93, issn 0040-6090Article

Formation of promising Co-C nanocompositionsLAVRENTIEV, V; ABE, H; YAMAMOTO, S et al.Surface and interface analysis. 2003, Vol 35, Num 1, pp 36-39, issn 0142-2421, 4 p.Article

A three-step process for epitaxial growth of (111)-oriented C₆₀ films on alkali-halide substratesDAI, Z; NARAMOTO, H; NARUMI, K et al.Thin solid films. 2000, Vol 360, Num 1-2, pp 28-33, issn 0040-6090Article

Heterophase polydomain structure and metal-semiconductor phase transition in vanadium dioxide thin films deposited on (1010) sapphireWU, Z. P; MIYASHITA, A; NASHIYAMA, I et al.Philosophical magazine letters. 1999, Vol 79, Num 10, pp 813-817, issn 0950-0839Article

Control of film orientation : a parametric study of laser ablated FTO films on a-, c- and r-cut sapphire substrates by X-ray diffractionDAI, Z; MIYASHITA, A; YAMAMOTO, S et al.Thin solid films. 1999, Vol 349, Num 1-2, pp 51-55, issn 0040-6090Article

Rutherford backscattering/channelling, XRD, XRD pole figure and AES characterization of FeTiO₃ thin films prepared in different ambients by laser ablationDAI, Z; NARAMOTO, H; YAMAMOTO, S et al.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 3, pp 913-925, issn 0953-8984Article

Characterization of epitaxially grown Cu/Nb multilayer on α-Al₂O₃ with RBS/channeling techniqueYAMAMOTO, S; NARAMOTO, H; TUCHIYA, B et al.Thin solid films. 1998, Vol 335, Num 1-2, pp 85-89, issn 0040-6090Article

Crystalline and nearly stoichiometric vanadium nitride thin film by PLDDAI, Z. N; MIYASHITA, A; YAMAMOTO, S et al.Thin solid films. 1999, Vol 347, Num 1-2, pp 117-120, issn 0040-6090Article