MBE growth of high-quality GaAsNARESH CHAND.Journal of crystal growth. 1989, Vol 97, Num 2, pp 415-429, issn 0022-0248Article

A simple method for elimination of gallium-source related oval defects in molecular beam epitaxy of GaAsNARESH CHAND.Applied physics letters. 1990, Vol 56, Num 5, pp 466-468, issn 0003-6951, 3 p.Article

Real-time monitoring and analysis of chemical wet etching of III-V compound semiconductorsNARESH CHAND; KARLICEK, R. F.Journal of the Electrochemical Society. 1993, Vol 140, Num 3, pp 703-705, issn 0013-4651Article

IS AIRWAY HYPERACTIVITY IN ASTHMA DUE TO HISTAMINE H₂-RECEPTOR DEFICIENCY.NARESH CHAND.1980; MED. HYPOTHESES; ISSN 0306-9877; GBR; DA. 1980; VOL. 6; NO 11; PP. 1105-1112; BIBL. 49 REF.Article

INFLUENCE OF PRIMARY PROSTAGLANDINS ON ISOLATED CANINE RENAL ARTERIES AND VEINSNARESH CHAND; ALTURA BM.1981; PROSTAGLANDINS MED.; ISSN 0161-4630; GBR; DA. 1981; VOL. 7; NO 1; PP. 49-62; BIBL. 30 REF.Article

REACTIVITY OF ISOLATED RAT AND CANINE PULMONARY BLOOD VESSELS TO SYNTHETIC PROSTAGLANDIN ENDOPEROXIDE (PGH₂) ANALOGSNARESH CHAND; ALTURA BM.1980; PROSTAGLANDINS MED.; ISSN 0161-4630; GBR; DA. 1980; VOL. 5; NO 6; PP. 469-475; BIBL. 19 REF.Article

REACTIVITY OF ISOLATED RAT AND CANINE PULMONARY ARTERIES TO PROSTAGLANDINSNARESH CHAND; ALTURA BM.1980; PROSTAGLANDINS MED.; GBR; DA. 1980; VOL. 5; NO 1; PP. 59-67; BIBL. 35 REF.Article

DUAL HISTAMINE RECEPTOR MECHANISM IN GUINEA-PIG LUNGNARESH CHAND; DEROTH L.1979; PHARMACOLOGY; CHE; DA. 1979; VOL. 19; NO 4; PP. 185-190; BIBL. 23 REF.Article

THE SCHULTZ-DALE REACTION: A REVIEW.NARESH CHAND; EYRE P.1978; AGENTS AND ACTIONS; CHE; DA. 1978; VOL. 8; NO 3; PP. 171-184; BIBL. 4 P.Article

Wavelength control and residual oxygen in AlGaAs/InGaAs strained quantum-well heterostructures grown by molecular beam epitaxyNARESH CHAND; FITZGERALD, E. A; GEVA, M et al.Applied physics letters. 1992, Vol 61, Num 24, pp 2893-2895, issn 0003-6951Article

Origin and improvement of interface roughness in AlGaAs/GaAs heterostructures grown by molecular beam epitaxyNARESH CHAND; CHU, S. N. G.Applied physics letters. 1990, Vol 57, Num 17, pp 1796-1798, issn 0003-6951Article

Elimination of dark line defects in GaAs-on-Si by post-growth patterning and thermal annealingNARESH CHAND; CHU, S. N. G.Applied physics letters. 1991, Vol 58, Num 1, pp 74-76, issn 0003-6951, 3 p.Article

Effect of paf-acether on isoprenaline-induced relaxation in isolated tracheal segments of rats and guinea pigsNARESH CHAND; DIAMANTIS, W; DUANE SOFIA, R et al.European journal of pharmacology. 1988, Vol 158, Num 1-2, pp 135-137, issn 0014-2999Article

Allergic responses and subsequent development of airway hyperreactivity to cold provocation in the rat trachea: pharmacological modulationNARESH CHAND; DIAMANTIS, W; MAHONEY, T. P et al.European journal of pharmacology. 1988, Vol 150, Num 1-2, pp 95-101, issn 0014-2999Article

Inhibition of acute lung anaphylaxis by aerosolized azelastine in guinea pigs sensitized by three different proceduresNARESH CHAND; NOLAN, K; DIAMANTIS, W et al.Annals of allergy. 1987, Vol 58, Num 5, pp 344-349, issn 0003-4738Article

Broadband 8-12 μm high-sensitivity GaAs quantum well infrared photodetectorLEVINE, B. F; HASNAIN, G; BETHEA, C. G et al.Applied physics letters. 1989, Vol 54, Num 26, pp 2704-2706, issn 0003-6951, 3 p.Article

Elimination of thermally induced biaxial stress in GaAs on Si layers by post-growth patterningVAN DER ZIEL, J. P; NARESH CHAND; WEINER, J. S et al.Journal of applied physics. 1989, Vol 66, Num 3, pp 1195-1198, issn 0021-8979Article

Temperature characteristics of (InAs)₁/(GaAs)₄ short-period superlattices quantum well laserDUTTA, N. K; NARESH CHAND; LOPATA, J et al.Applied physics letters. 1993, Vol 62, Num 17, pp 2018-2020, issn 0003-6951Article

(InAS)₁/(GaAs)₄ superlattices quantum-well laserDUTTA, N. K; NARESH CHAND; LOPATA, J et al.Applied physics letters. 1992, Vol 60, Num 8, pp 924-925, issn 0003-6951Article

Paralytic poliomyelitis. Rehabilitation point of viewSRIVASTAVA, R. K; BHATNAGAR, S. K; NARESH CHAND et al.Indian pediatrics. 1985, Vol 22, Num 1, pp 41-45, issn 0019-6061Article

Monolithically Peltier-cooled vertical-cavity surface-emitting lasersBERGER, P. R; DUTTA, N. K; CHOQUETTE, K. D et al.Applied physics letters. 1991, Vol 59, Num 1, pp 117-119, issn 0003-6951Article

Monolithic integration of GaAs and In_0.2Ga_0.8As lasers by molecular beam epitaxy on GaAsBERGER, P. R; DUTTA, N. K; LOPATA, J et al.Applied physics letters. 1991, Vol 58, Num 23, pp 2698-2700, issn 0003-6951Article

Excellent uniformity and very low (<50 A/cm²) threshold current density strained InGaAs quantum well diode lasers on GaAs substrateNARESH CHAND; BECKER, E. E; VAN DER ZIEL, J. P et al.Applied physics letters. 1991, Vol 58, Num 16, pp 1704-1706, issn 0003-6951Article

Characteristics of single- and two-dimensional phase coupled arrays of vertical cavity surface emmitting GaAs-AlGaAs lasersVAN DER ZIEL, J. P; DEPPE, D. G; NARESH CHAND et al.IEEE journal of quantum electronics. 1990, Vol 26, Num 11, pp 1873-1882, issn 0018-9197Article

GaAs-on-Si: improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high-performance AlGaAs/GaAs selectivity doped heterostructure transistors and ring oscillatorsNARESH CHAND; REN, F; MACRANTER, A. T et al.Journal of applied physics. 1990, Vol 67, Num 5, pp 2343-2353, issn 0021-8979Article