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Surface photovoltage and deep level transient spectrocopy measurement of the Fe impurities in front-end operations of the IC CMOS processNAUKA, K; GOMEZ, D. A.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp L98-L99, issn 0013-4651Article

Suppression of water absorption in borophosphosilicate glass thin layers with high boron concentrationNAUKA, K; LIU, C.Journal of the Electrochemical Society. 1991, Vol 138, Num 8, pp 2367-2370, issn 0013-4651Article

Deposited charge measurements on silicon wafers after plasma treatmentSHOHET, J. L; NAUKA, K; RISSMAN, P et al.IEEE transactions on plasma science. 1996, Vol 24, Num 1, pp 75-76, issn 0093-3813Article

Oxygen-induced recombination centers in as-grown Czochralski silicon crystalsNAUKA, K; GATOS, H. C; LAGOWSKI, J et al.Applied physics letters. 1983, Vol 43, Num 3, pp 241-243, issn 0003-6951Article

Electron beam induced current and cathodoluminescence imaging of the antiphase domain boundaries in GaAs grown on SiNAUKA, K; REID, G. A; LILIENTAL-WEBER, W et al.Applied physics letters. 1990, Vol 56, Num 4, pp 376-378, issn 0003-6951Article

Effect of self-assembled Ge nanostructures on Si surface electronic propertiesKAMINS, T. I; NAUKA, K; WILLIAMS, R. S et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 73, Num 1, pp 1-9, issn 0947-8396Article

Defect characterization of n-type Si_1-xGe_x after 1.0 keV helium-ion etchingGOODMAN, S. A; AURET, F. D; NAUKA, K et al.Journal of electronic materials. 1997, Vol 26, Num 5, pp 463-469, issn 0361-5235Article

Junction leakage in titanium self-aligned silicide devicesAMANO, J; NAUKA, K; SCOTT, M. P et al.Applied physics letters. 1986, Vol 49, Num 12, pp 737-739, issn 0003-6951Article

Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si_1-xGe_x epitaxial layersKAMINS, T. I; NAUKA, K; JACOWITZ, R. D et al.IEEE electron device letters. 1992, Vol 13, Num 4, pp 177-179, issn 0741-3106Article

Identification of intrinsic gettering centers in oxygen-free silicon crystalsUEDA, O; NAUKA, K; LAGOWSKI, J et al.Journal of applied physics. 1986, Vol 60, Num 2, pp 622-626, issn 0021-8979Article

Contact potential difference methods for full wafer characterization of Si/SiO₂ interface defects induced by plasma processingEDELMAN, P; SAVCHOUK, A; WILSON, M et al.SPIE proceedings series. 1998, pp 126-136, isbn 0-8194-2968-6Conference Paper

Small-geometry, high-performance, Si-Si_1-xGe_x heterojonction bipolar transistorsKAMINS, T. I; NAUKA, K; KRUGER, J. B et al.IEEE electron device letters. 1989, Vol 10, Num 11, pp 503-505, issn 0741-3106Article

Leakage current in GaInAs/InP photodiodes grown by OMVPECAREY, K. W; SHIH-YUAN WANG; CHANG, J. S. C et al.Journal of crystal growth. 1989, Vol 98, Num 1-2, pp 90-97, issn 0022-0248Conference Paper

Rapid oxidation of InP nanoparticles in airJASINSKI, J; LEPPERT, V. J; LAMB, Si-Ty et al.Solid state communications. 2007, Vol 141, Num 11, pp 624-627, issn 0038-1098, 4 p.Article

Sequence-specific label-free DNA sensors based on silicon nanowiresLI, Z; CHEN, Y; LI, X et al.Nano letters (Print). 2004, Vol 4, Num 2, pp 245-247, issn 1530-6984, 3 p.Article

Partially strained Si_1-xGe_x/Si structures investigated by photoreflectance spectroscopySITAREK, P; MISIEWICZ, J; NAUKA, K et al.SPIE proceedings series. 1999, pp 214-217, isbn 0-8194-3199-0Conference Paper

Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasersRAM, R. J; YANG, L; NAUKA, K et al.Applied physics letters. 1993, Vol 62, Num 20, pp 2474-2476, issn 0003-6951Article