CdSSe quantum dots: effect of the hydrogen RF plasma treatment on exciton luminescenceKUNETS, V. P; KULISH, N. R; STRELCHUK, V. V et al.Physica. E, low-dimentional systems and nanostructures. 2004, Vol 22, Num 4, pp 804-807, issn 1386-9477, 4 p.Article

Nature of high-temperature charge instability in fully depleted SOI MOSFETsNAZAROV, A. N; LYSENKO, V. S; COLINGE, J.-P et al.Proceedings - Electrochemical Society. 2003, pp 455-460, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Manifestation of hydrogen in Al-SiO₂-Si structures subjected to a RF plasma annealingLYSENKO, V. S; NAZAROV, A. N; NAUMOVETS, G. A et al.Physica status solidi. A. Applied research. 1989, Vol 112, Num 1, pp K9-K12, issn 0031-8965Article

RF plasma annealing of implanted MIS structuresLYSENKO, V. S; LOKSHIN, M. M; NAZAROV, A. N et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 2, pp 705-712, issn 0031-8965Article

Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H filmsVASIN, A. V; ISHIKAWA, Y; KOLESNIK, S. P et al.Solid state sciences. 2009, Vol 11, Num 10, pp 1833-1837, issn 1293-2558, 5 p.Conference Paper

Charge trapping and interface states in hydrogen annealed HfO₂-Si structuresGOMENIUK, Y. V; NAZAROV, A. N; VOVK, Ya. N et al.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 714-717, issn 0026-2714, 4 p.Conference Paper

High-temperature behavior of fully-depleted soi mosfets in case of charge instability of buried oxideNAZAROV, A. N; HOUK, Y; VOVK, Ya. N et al.Proceedings - Electrochemical Society. 2005, pp 113-118, issn 0161-6374, isbn 1-56677-461-6, 6 p.Conference Paper

Two-phase model of debris-flowBOZHINSKIY, A. N; NAZAROV, A. N.International Conference on debris-flow hazards mitigation. 2000, pp 263-269, isbn 90-5809-149-XConference Paper

Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxideNAZAROV, A. N; BARCHUK, I. P; LYSENKO, V. S et al.Microelectronic engineering. 1999, Vol 48, Num 1-4, pp 379-382, issn 0167-9317Conference Paper

Transport and interface states in high-κ LaSiO_x dielectricGOMENIUK, Y. Y; GOMENIUK, Y. V; TYAGULSKII, I. P et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1342-1345, issn 0167-9317, 4 p.Conference Paper

Charge trapping in ultrathin Gd₂O₃ high-k dielectricNAZAROV, A. N; GOMENIUK, Y. V; GOMENIUK, Y. Y et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 1968-1971, issn 0167-9317, 4 p.Conference Paper

Charge trapping in high-dose Ge-implanted and Si-implanted silicon-dioxide thin filmsNAZAROV, A. N; OSIYUK, I. N; TYAGULSKII, I. P et al.Proceedings - Electrochemical Society. 2003, pp 144-149, issn 0161-6374, isbn 1-56677-347-4, 6 p.Conference Paper

Flash lamp annealing and RF plasma annealing of Al-SiO₂-Si structuresNAZAROV, A. N; LYSENKO, V. S; VALIEV, S. A et al.Physica status solidi. A. Applied research. 1990, Vol 120, Num 2, pp 447-456, issn 0031-8965Article

Processus de stimulation thermique des structures MDP implantées à couches semi-conductrices sous-jacentes fortement endommagéesVALIEV, S. A; LYSENKO, V. S; NAZAROV, A. N et al.Geliotehnika (Taškent). 1988, Num 1, pp 9-13, issn 0130-0997Article

Simple method for the determination of the doping profile in MIS structures with implanted shallow p-n junctionLYSENKO, V. S; NAZAROV, A. N; RUDENKO, T. E et al.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp K173-K178, issn 0031-8965Article

Thermally activated analysis of LaSiO_x/Si and GdSiO_x/Si structures at cryogenic temperaturesTYAGULSKII, I. P; TYAGULSKII, S. I; NAZAROV, A. N et al.Microelectronic engineering. 2013, Vol 109, pp 31-34, issn 0167-9317, 4 p.Article

Impact ionization induced dynamic floating body effect in junctionless transistorsYU, R; NAZAROV, A. N; LYSENKO, V. S et al.Solid-state electronics. 2013, Vol 90, pp 28-33, issn 0038-1101, 6 p.Conference Paper

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodesNAZAROV, A. N; OSIYUK, I. N; SUN, J. M et al.Applied physics. B, Lasers and optics (Print). 2007, Vol 87, Num 1, pp 129-134, issn 0946-2171, 6 p.Article

Charge storage peculiarities in poly-Si-SiO₂-Si memory devices with Si nanocrystals rich SiO₂TURCHANIKOV, V. I; NAZAROV, A. N; LYSENKO, V. S et al.Microelectronics and reliability. 2005, Vol 45, Num 5-6, pp 903-906, issn 0026-2714, 4 p.Conference Paper

A plant of modular design for cleaning the waste waters of heat and power stations, producing dry salt residuesSEDLOV, A. S; ROZHNATOVSKII, V. D; DANILOV, YU. B et al.Thermal engineering. 1991, Vol 38, Num 5, pp 257-260, issn 0040-6015Article

Radio-frequency plasma treatment and thermal annealing in implanted Si : Raman studyARTAMONOV, V. V; LYSENKO, V. S; NAZAROV, A. N et al.Physica status solidi. A. Applied research. 1990, Vol 120, Num 2, pp 475-484, issn 0031-8965Article

Raman scattering in ion-implanted silicon exposed to RF-plasma treatmentARTAMONOV, V. V; VALAKH, M. Y; LYSENKO, V. S et al.Applied physics. A, Solids and surfaces. 1990, Vol 51, Num 5, pp 434-436, issn 0721-7250Article

EPR and TSCR investigations of implanted Al-SiO₂-Si systems treated with RF plasma discharge = Etudes EPR et TSCR de systèmes d'ions implantés dans Al-SiO₂-Si traités par décharge RF (radio fréquence) de PlasmaLYSENKO, V. S; NAZAROV, A. N; VALIEV, S. A et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp 653-665, issn 0031-8965Article

Interrelation between surface states and transition layer defects in Si-SiO₂ structuresLYSENKO, V. S; SYTENKO, T. N; SNITKO, O. V et al.Solid state communications. 1986, Vol 57, Num 3, pp 171-174, issn 0038-1098Article

Etude des caractéristiques capacitives de varactors Métal-Diélectrique. Semiconducteur avec jonction p.n. superficielle à dopage ioniqueLYSENKO, V. S; NAZAROV, A. N; RUDENKO, T. E et al.Mikroèlektronika (Moskva). 1984, Vol 13, Num 3, pp 252-259, issn 0544-1269Article