au.\*:("NESMELOVA, I. M")
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Absorption of light in compensated semiconductors with the Kane band structureNESMELOVA, I. M; TYBULEWICZ, A.Soviet physics. Semiconductors. 1991, Vol 25, Num 12, pp 1334-1335, issn 0038-5700Article
The effect of the low-temperature annealing on the electrical and structural properties of epitaxial layers - CMT and MMTNESMELOVA, I. M; RYZHKOV, V. N; Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 269-273, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 5 p.Conference Paper
Structural defects in semiconductors with diamond-like structureZONSHAIN, E. M; PETROVA, O. A; PASLAVSKII, V. V et al.Inorganic materials. 1995, Vol 31, Num 8, pp 1024-1025, issn 0020-1685Article