Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("NGUYEN, B. Y")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 44

  • Page / 2
Export

Selection :

  • and

Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked filmsLEE, S. K; CHEN, J. H; KU, Y. H et al.Solid-state electronics. 1988, Vol 31, Num 10, pp 1501-1503, issn 0038-1101Article

A Self-Rectifying AlOy Bipolar RRAM With Sub-50-μA Set/Reset Current for Cross-Bar ArchitectureTRAN, X. A; ZHU, W; LIU, W. J et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1402-1404, issn 0741-3106, 3 p.Article

Influences of processing chemistry of silicon nitride films on the charge trapping behavior of oxide/CVD-nitride/oxide capacitorsNGUYEN, B. Y; TOBIN, P. J; TENG, K. W et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 3, pp 776-777, issn 0013-4651Article

Self-Selection Unipolar HfOx-Based RRAMTRAN, X. A; ZHU, W; LIU, W. J et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 391-395, issn 0018-9383, 5 p.Article

Interfacial structures of LaAlO3 films on Si(100) substratesLU, X. B; LIU, Z. G; SHI, G. H et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 6, pp 921-923, issn 0947-8396, 3 p.Article

Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETsKARIM, M. A; CHAUHAN, Y. S; VENUGOPALAN, S et al.IEEE electron device letters. 2012, Vol 33, Num 9, pp 1306-1308, issn 0741-3106, 3 p.Article

A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar IntegrationTRAN, X. A; YU, H. Y; NGUYEN, B. Y et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 396-398, issn 0741-3106, 3 p.Article

Metalorganic chemical vapor deposition of lanthanum aluminate thin films for gate dielectricsLI, A. D; CHENG, J. B; ZHOU, H. W et al.Ferroelectrics (Print). 2005, Vol 329, pp 73-77, issn 0015-0193, 5 p.Conference Paper

A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi ElectrodeTRAN, X. A; ZHU, W. G; YU, H. Y et al.IEEE electron device letters. 2012, Vol 33, Num 4, pp 585-587, issn 0741-3106, 3 p.Article

Mobility enhancement through substrate engineeringCAYREFOURCQ, I; KENNARD, M; METRAL, F et al.Proceedings - Electrochemical Society. 2005, pp 191-206, issn 0161-6374, isbn 1-56677-461-6, 16 p.Conference Paper

New materials for active and passive integrated devices for wireless applicationsGILL, P; MILLER, M; NGUYEN, B. Y et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 169-175, issn 0167-9317Conference Paper

Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technologyFENOUILLET-BERANGER, C; PERREAU, P; ANDRIEU, F et al.Solid-state electronics. 2013, Vol 88, pp 15-20, issn 0038-1101, 6 p.Article

Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performancesAKKEZ, Imed Ben; FENOUILLET-BERANGER, Claire; BENEYTON, R et al.Solid-state electronics. 2013, Vol 90, pp 143-148, issn 0038-1101, 6 p.Conference Paper

Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technologyFENOUILLET-BERANGER, C; PERREAU, P; ABBATE, F et al.Solid-state electronics. 2012, Vol 74, pp 32-37, issn 0038-1101, 6 p.Article

Ni Electrode Unipolar Resistive RAM Performance Enhancement by AlOy Incorporation Into HfOx Switching DielectricsTRAN, X. A; YU, H. Y; GAO, B et al.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1290-1292, issn 0741-3106, 3 p.Article

Parallel hot-carrier-induced degradation mechanisms in hydrogen-passivated polysilicon-on-insulator LDD p-MOSFET'sBHATTACHARYA, S; KOVELAMUDI, R; BATRA, S et al.IEEE electron device letters. 1992, Vol 13, Num 9, pp 491-493, issn 0741-3106Article

Safety and tolerability of caspofungin acetate in the treatment of fungal infectionsSABLE, C. A; NGUYEN, B-Y T; CHODAKEWITZ, J. A et al.Transplant infectious disease (Print). 2002, Vol 4, Num 1, pp 25-30, issn 1398-2273Article

Modeling the long-term outcomes and costs of HIV antiretroviral therapy using HIV RNA levels : Application to a clinical trialCOOK, J; DASBACH, E; COPLAN, P et al.AIDS research and human retroviruses. 1999, Vol 15, Num 6, pp 499-508, issn 0889-2229Article

Perfect alignment of self-organized Ge islands on pre-grown Si stripe mesasJIN, G; LIU, J. L; THOMAS, S. G et al.Applied physics. A, Materials science & processing (Print). 2000, Vol 70, Num 5, pp 551-554, issn 0947-8396Article

Size heterogeneity among antigenically related Giardia lamblia variant-specific surface proteins is due to differences in tandem repeat copy numberMOWATT, M. R; NGUYEN, B.-Y. T; CONRAD, J. T et al.Infection and immunity. 1994, Vol 62, Num 4, pp 1213-1218, issn 0019-9567Article

Scaling assessment of fully-depleted SOI technology at the 30nm gate length generationVANDOOREN, A; JOVANOVIC, D; EGLEY, S et al.IEEE International SOI conference. 2002, pp 25-27, isbn 0-7803-7439-8, 3 p.Conference Paper

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor depositionSHAO, Q.-Y; LI, A.-D; CHENG, J.-B et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 6, pp 1181-1185, issn 0947-8396, 5 p.Article

Study of interfacial oxide layer of LaAlO3 gate dielectrics on Si for metal-insulator-semiconductor devicesLING, H; LU, X; ZHOU, H et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 3, pp 641-644, issn 0947-8396, 4 p.Article

Physics-based compact modeling for nonclassical CMOSTRIVEDI, V. P; FOSSUM, J. G; MATHEW, L et al.IEEE/ACM International Conference on Computer-Aided Design. 2005, pp 211-216, isbn 0-7803-9254-X, 1Vol, 6 p.Conference Paper

Substrate bias effects in SOI FinFETsPRETET, J; DAUGE, F; VANDOOREN, A et al.Proceedings - Electrochemical Society. 2003, pp 231-236, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

  • Page / 2