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TRANSITION RESISTANCES OF OHMIC CONTACTS TO P-TYPE CDTE AND THEIR TIME-DEPENDENT VARIATIONSJAEGER H; SEIPP E.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 3; PP. 605-618; BIBL. 10 REF.Article

PHASE SEPARATION IN FCC STRUCTURES = SEPARATION DE PHASES DANS LES STRUCTURES CFCRODRIGUEZ RODRIGUEZ M; MORAN LOPEZ JL.1982; PHASE TRANSIT.; ISSN 0141-1594; GBR; DA. 1982; VOL. 2; NO 4; PP. 241-246; BIBL. 12 REF.Article

SURFACE FREE ENTHALPY IN MULTILAYER SURFACE DESCRIPTIONSMEZEY LZ; GIBER J.1983; SURFACE SCIENCE; ISSN 0039-6028; NLD; DA. 1983; VOL. 127; NO 1; PP. L98-L101; BIBL. 6 REF.Article

Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAsGUPTA, R. P; KHOKLE, W. S.Solid-state electronics. 1985, Vol 28, Num 8, pp 823-830, issn 0038-1101Article

Sputter-induced compositional modifications in a Ni-Au alloyLAM, N. Q; HOFF, H. A; REGNIER, P. G et al.Journal of nuclear materials. 1985, Vol 133-134, pp 427-429, issn 0022-3115Article

Uniform and thermally stable AuGeNi ohmic contacts to GaAsCALLEGRI, A; PAN, E. T.-S; MURAKAMI, M et al.Applied physics letters. 1985, Vol 46, Num 12, pp 1141-1143, issn 0003-6951Article

ohmic contacts to semi-insulating GaAsKAMINSKA, E; PIOTROWSKA, A; KNAP, W et al.Acta physica Polonica. A. 1988, Vol 73, Num 3, pp 501-503, issn 0587-4246Article

An improved Au-Ge-Ni ohmic contact to n-type GaAsBRUCE, R. A; PIERCY, G. R.Solid-state electronics. 1987, Vol 30, Num 7, pp 729-737, issn 0038-1101Article

Scanned electron beam alloyed ohmic contact to n-GaAsKALKUR, T. S; NASSIBIAN, A. G.Solid-state electronics. 1987, Vol 30, Num 6, pp 619-625, issn 0038-1101Article

Electrical and thermal stability of AuGeNi ohmic contacts to GaAs fabricated with in situ RF sputter cleaningCALLEGARI, A; LACEY, D; PAN, E. T.-S et al.Solid-state electronics. 1986, Vol 29, Num 5, pp 523-527, issn 0038-1101Article

Low-temperature annealed contacts to very thin GaAs epilayersPATIRCK, W; MACKIE, W. S; BEAUMONT, S. P et al.Applied physics letters. 1986, Vol 48, Num 15, pp 986-988, issn 0003-6951Article

Pressure transducer with Au-Ni thin-film strain gaugesRAJANNA, K; MOHAN, S; NAYAK, M. M et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 3, pp 521-524, issn 0018-9383Article

AuGeNi ohmic contacts to n-InP for FET applicationsDEL ALAMO, J. A; MIZUTANI, T.Solid-state electronics. 1988, Vol 31, Num 11, pp 1635-1639, issn 0038-1101Article

Low-resistance alloyed NiGeAuAgAu ohmic contacts to modulation-doped Al0•48In0.52As/Ga0.47In0.53AsCAPANI, P. M; MUKHERJEE, S. D; GRIEM, H. T et al.Electronics Letters. 1986, Vol 22, Num 5, pp 285-286, issn 0013-5194Article

Very low resistance Au/Ge/Ni/Ag based ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48Ino0.52As/Ga0.47In0.53As heterostructures: a behavioral comparisonZWICKNAGL, P; MUKHERJEE, S. D; CAPANI, P. M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 2, pp 476-484, issn 0734-211XArticle

Degradation of scanned-electron-beam-alloyed Ohmic contacts on n-GaAsKALKUR, T. S; NASSIBIAN, A. G.Semiconductor science and technology. 1987, Vol 2, Num 9, pp 615-620, issn 0268-1242Article

The influence of interfacial morphology and composition on the behavior of AuGeNi contacts to InPANDERSON, D. A; GRAHAM, R. J; STEEDS, J. W et al.Semiconductor science and technology. 1988, Vol 3, Num 2, pp 63-76, issn 0268-1242Article

Combined EBIC-Auger analysis of Auge NI/n-GaAs ohmic contact formationHILI, I. R; LAU, W. M; YANG, G. R et al.Surface and interface analysis. 1988, Vol 11, Num 12, pp 596-598, issn 0142-2421Article

Ion beam mixing for ohmic contact formation to n- type GaAZHAO JIE; THOMPSON, D. A.Journal of electronic materials. 1988, Vol 17, Num 3, pp 249-254, issn 0361-5235Article

Oxygen contamination of Ge during thermal evaporation for Ohmic contacts to GaAsMOSHIER, W. C; TU, D.-W; DAVIS, G. D et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 2, pp 582-583, issn 0734-211XArticle

Contribution à l'étude et à la réalisation de contacts sur AsGa par recuit électronique pulsé = Contribution to the study and the fabrication of contacts on GaAs by pulsed electron beam annealingSEVELY, Laure.1985, 175 pThesis

Investigation of mechanisms and diffusion mass-transfer parameters in electrochemically deposited Cr-Cu-Ni-Au layered systemKLIMACHEV, I. I; LITVINOVA, T. V; SIDORENKO, S. I et al.Fizika i himiâ obrabotki materialov. 1992, Num 5, pp 119-123, issn 0015-3214Article

A multicomponent, multilayer model of surface segregation in alloy catalystsSTROHL, J. K; KING, T. S.Journal of catalysis (Print). 1989, Vol 118, Num 1, pp 53-67, issn 0021-9517Article

Initial growth of Au on Ni(110) : surface alloying of immiscible metalsNIELSEN, L. P; BESENBACHER, F; STENSGAARD, I et al.Physical review letters. 1993, Vol 71, Num 5, pp 754-757, issn 0031-9007Article

GaAs sanyled-analogue integrated circuitsPHILLIPS, J. A; HARROLD, S. J; BARKER, G. K et al.Journal of the Institution of Electronic and Radio Engineers. 1987, Vol 57, Num 1, pp 35-43, issn 0267-1689, supplArticle

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