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SOLL SICH DER OEFFENTLICHE PERSONENNAHVERKEHR AM ANGEBOT ODER AND DER NACHFRAGE ORIENTIEREN. VERSUCH EINER NEUEN STANDORTBESTIMMUNG FUER DEN OEPNV = LE TRANSPORT PUBLIC DE VOYAGEURS A COURTE DISTANCE DOIT-IL S'ORIENTER EN FONCTION DE L'OFFRE OU DE LA DEMANDE. ESSAI D'UNE NOUVELLE DEFINITION DE SON IMPLANTATIONNIKLAS J.1981; INT. VERKEHRSWES.; ISSN 0020-9511; DEU; DA. 1981; VOL. 33; NO 3; PP. 179-190; 9 P.; ABS. ENG/FREArticle

THE ROLE OF THE EARTHWORM, LUMBRICIUS TERRESTRIS (L.) IN REMOVING SOURCES OF PHYTOPATHOGENIC FUNGI IN ORCHARDSNIKLAS J; KENNEL W.1981; GARTENBAUWISS.; DEU; DA. 1981; VOL. 46; NO 3; PP. 138-142; ABS. GER/FRE/RUS; BIBL. 13 REF.Article

ZUM EINFLUSS VON OBSTBAULICHEN BODENPFLEGEMASSHAHMEN AUF LUMBRICIDEN, INSBESONDERE LUMBRICUS TERRESTRIS L = INFLUENCE DES TECHNIQUES CULTURALES UTILISEES SUR LE SOL DES VERGERS, SUR LES LUMBRICIDES, EN PARTICULIER L.T.L.NIKLAS J; WELLER F; KENNEL W et al.1979; Z. PFLANZENERNAEHR. BODENKDE; DEU; DA. 1979; VOL. 142; NO 3; PP. 411-421; ABS. ENG; BIBL. 1 P.Article

Stochastic ENDORBRÜGGEMANN, W; NIKLAS, J. R.Journal of magnetic resonance. Series A (Print). 1994, Vol 108, Num 1, pp 25-29, issn 1064-1858Article

Analysis of micro-nutrient behaviour in the rhizosphere using a DGT parameterised dynamic plant uptake modelLEHTO, Niklas J; DAVISON, William; HAO ZHANG et al.Plant and soil. 2006, Vol 282, Num 1-2, pp 227-238, issn 0032-079X, 12 p.Article

V³⁺ centres in GaAs and GaP: an ENDOR investigationHAGE, J; NIKLAS, J. R; SPAETH, J. -M et al.Semiconductor science and technology. 1989, Vol 4, Num 9, pp 773-781, issn 0268-1242, 9 p.Article

Dynamic aspects of DGT as demonstrated by experiments with lanthanide complexes of a multidentate ligandGARMO, Øyvind Aaberg; LEHTO, Niklas J; HAO ZHANG et al.Environmental science & technology. 2006, Vol 40, Num 15, pp 4754-4760, issn 0013-936X, 7 p.Article

Thermal donors in silicon: a study with ENDORMICHEL, J; NIKLAS, J. R; SPAETH, J.-M et al.Physical review letters. 1986, Vol 57, Num 5, pp 611-614, issn 0031-9007Article

Vorausschätzungen des Ersatzinvestitionsbedarfs für die Bundesverkehrsweg (FE 98054/82) = Estimation des besoins d'investissement de remplacement au titre des infrastructures fédérales de transport = Forecast replacement investment requirements for the federal transport infrastructureBARTHOLMAI, B; ENDERLEIN, H; NIKLAS, J et al.Internationales Verkehrswesen. 1985, Vol 37, Num 5, pp 296-298, issn 0020-9511Article

ENDOR investigation of atomic hydrogen centres in hydrogen beta aluminaUEDA, Y; NIKLAS, J. R; HEDER, G et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 31, pp 6039-6046, issn 0022-3719Article

Two types of F centres in alkaline earth fluoro-halides.II: Double ENDOR experimentsNIKLAS, J. R; BAUER, R. U; SPAETH, J.-M et al.Physica status solidi. B. Basic research. 1983, Vol 119, Num 1, pp 171-178, issn 0370-1972Article

Defect specific topography of GaAs wafers by microwave-detected photo induced current transient spectroscopyGRÜNDIG-WENDROCK, B; JURISCH, M; NIKLAS, J. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 371-375, issn 0921-5107Conference Paper

Heavy ion escape from Mars, influence from solar wind conditions and crustal magnetic fieldsNILSSON, Hans; EDBERG, Niklas J. T; STENBERG, Gabriella et al.Icarus (New York, N.Y. 1962). 2011, Vol 215, Num 2, pp 475-484, issn 0019-1035, 10 p.Article

On the microscopic structure of the EL6 defect in GaAsSTEINEGGER, Th; GRÜNDIG-WENDROCK, B; JURISCH, M et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 745-748, issn 0921-4526Conference Paper

Electron nuclear double resonance of interstitial iron in siliconGREULICH-WEBER, S; NIKLAS, J. R; WEBER, E. R et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 11, pp 6292-6299, issn 0163-1829Article

Investigation of Cu-related deep levels in semi-insulating GaAs by PICTSZYCHOWITZ, G; SIEGEL, W; STEINEGGER, T et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 800-803, issn 0921-4526Conference Paper

Structure of a (RhCl₆)^4- defect in AgClOLM, M. T; NIKLAS, J. R; SPAETH, J. M et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 7, pp 4343-4351, issn 0163-1829Article

Topography of defect parameters on Si and GaAs wafersDORNICH, K; GRÜNDIG-WENDROCK, B; HAHN, T et al.Advanced engineering materials (Print). 2004, Vol 6, Num 7, issn 1438-1656, 472, 598-602 [6 p.]Article

Point-contact measurements for high-resolution profiling of high-resistivity III-V semiconductorsSIEGEL, W; KÜHNEL, G; NIKLAS, J. R et al.Semiconductor science and technology. 1996, Vol 11, Num 6, pp 851-857, issn 0268-1242Article

Arsenic antisite defect As_Ga and EL2 in GaAsMEYER, B. K; HOFMANN, D. M; NIKLAS, J. R et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 2, pp 1332-1335, issn 0163-1829Article

ENDOR investigation of Ni³⁺ in GaPUEDA, Y; NIKLAS, J. R; SPAETH, J. M et al.Solid state communications. 1983, Vol 46, Num 2, pp 127-131, issn 0038-1098Article

Localized Flux Maxima of Arsenic, Lead, and Iron around Root Apices in Flooded Lowland RiceWILLIAMS, Paul N; SANTNER, Jakob; LARSEN, Morten et al.Environmental science & technology. 2014, Vol 48, Num 15, pp 8498-8506, issn 0013-936X, 9 p.Article

Explanation of positive and negative PICTS peaks in SI-GaAsSCHMERLER, S; HAHN, T; HAHN, S et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S328-S332, SUP1Conference Paper

Interpretation of lifetime and defect spectroscopy measurements by generalized rate equationsHAHN, T; SCHMERLER, S; HAHN, S et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S79-S82, SUP1Conference Paper