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au.\*:("NILSSON NG")

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HALLANDS FLORA = FLORE DE LA PROVINCE DE HALLAND (SUD OUEST DE LA SUEDE)NILSSON NG.1979; SVENSK BOT. T.; SWE; DA. 1979; VOL. 73; NO 6; PP. 409-412; ABS. ENG; BIBL. 5 REF.Article

EMPIRICAL APPROXIMATIONS APPLIED TO THE GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORSNILSSON NG.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 1; PP. K43-K45; BIBL. 5 REF.Article

BAND-TO-BAND AUGER RECOMBINATION AND CARRIER-CARRIER SCATTERING IN POWER RECTIFIERSNILSSON NG.1972; ELECTRON. LETTERS; G.B.; DA. 1972; VOL. 8; NO 23; PP. 580-582; BIBL. 12 REF.Serial Issue

EMPIRICAL APPROXIMATION FOR THE FERMI ENERGY IN A SEMICONDUCTOR WITH PARABOLIC BANDSNILSSON NG.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 7; PP. 653-654; BIBL. 4 REF.Article

THE INFLUENCE OF AUGER RECOMBINATION ON THE FORWARD CHARACTERISTIC OF SEMICONDUCTOR POWER RECTIFIERS AT HIGH CURRENT DENSITIESNILSSON NG.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 6; PP. 681-688; BIBL. 25 REF.Serial Issue

INVESTIGATION OF THE SECOND INDIRECT TRANSITION OF SILICON BY MEANS OF PHOTOCONDUCTIVITY MEASUREMENTS.HULTHEN R; NILSSON NG.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 9-10; PP. 1341-1343; BIBL. 23 REF.Article

DETERMINATION OF THE TEMPERATURE DEPENDENCE OF THE FREE CARRIER AND INTERBAND ABSORPTION IN SILICON AT 1.06 MU MSVANTESSON KG; NILSSON NG.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 18; PP. 3837-3842; BIBL. 13 REF.Article

THE ROLE OF FREE CARRIER ABSORPTION IN LASER ANNEALING OF SILICON AT 1.06 MU MNILSSON NG; SVANTESSON KG.1980; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1980; VOL. 13; NO 1; PP. 39-44; BIBL. 8 REF.Article

THE TEMPERATURE DEPENDENCE OF THE AUGER RECOMBINATION COEFFICIENT OF UNDOPED SILICONSVANTESSON KG; NILSSON NG.1979; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1979; VOL. 12; NO 23; PP. 5111-5120; BIBL. 2 P.Article

DETERMINATION OF THE ABSORPTION AND THE FREE CARRIER DISTRIBUTION IN SILICON AT HIGH LEVEL PHOTOGENERATION AT 1,06 MU M AND 294KSVANTESSON KG; NILSSON NG.1978; PHYS. SCRIPTA; SWE; DA. 1978; VOL. 18; NO 6; PP. 405-409; BIBL. 10 REF.Article

PHOTOINDUCED INFRARED ABSORPTION AND LUMINESCENCE IN INDIUM-DOPED SILICONSUNDSTROM BO; HULDT L; NILSSON NG et al.1978; PHYS. SCRIPTA; SWE; DA. 1978; VOL. 18; NO 6; PP. 413-414; BIBL. 3 REF.Article

THE TEMPERATURE DEPENDENCE OF BAND-TO-BAND AUGER RECOMBINATION IN SILICONHULDT L; NILSSON NG; SVANTESSON KG et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 10; PP. 776-777; BIBL. 27 REF.Article

ELECTRON CAPTURE COEFFICIENT OF NEUTRAL INDIUM IN SILICON.SUNDSTROEM BO; HULDT L; NILSSON NG et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 7; PP. 787-790; BIBL. 11 REF.Article

ELECTRON CAPTURE COEFFICIENT OF NEUTRAL INDIUM AND PAIR RECOMBINATION IN COMPENSATED SILICONSUNDSTROM BO; HULDT L; NILSSON NG et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 15; PP. 3359-3370; BIBL. 30 REF.Article

PHOTOLUMINESCENCE OF ZINC PHOSPHIDE-ZN3P2HULDT L; NILSSON NG; SUNDSTROEM BO et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. K15-K18; BIBL. 10 REF.Article

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