ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-SILICON NITRIDE-SILICON DIOXYDE-SILICON STRUCTURESMAEKAWA M.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 9; PP. 1251-1258; BIBL. 29 REF.Serial Issue

EFFET DE LA CHARGE D'ESPACE SUR LA CONDUCTIVITE DES COUCHES DE NITRURE DE SILICIUM DANS LES CHAMPS ELECTRIQUES FAIBLESBUFF V.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 2; PP. 176-179; BIBL. 7 REF.Article

EXPERIENCE IN THE MANUFACTURE OF GAS TURBINE VANES OF HOT PRESSED SILICON NITRIDE AND SILICON CARBIDE = EXPERIENCE DE FABRICATION DES AUBES DE TURBINE A GAZ A PARTIR DE CARBURE DE SILICIUM OU DE NITRURE DE SILICIUM PRESSE A CHAUDBART RK; HAUCK EW; TORTI ML et al.1975; IN: GAS TURBINE CONF. PROD. SHOW; HOUSTON, TEX.; 1975; NEW YORK,; AM. SOC. MECH. ENGL.; DA. 1975; VOL. 75-GT-99; PP. 1-7; BIBL. 11REF.Conference Paper

CONDUCTION MECHANISMS IN VERY THIN SILICON NITRIDE FILMSSANCHEZ LASSISE JH; YEARGAN JR.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 3; PP. 423-425; BIBL. 10 REF.Serial Issue

THE LADDER MICROCONSTITUENT OF SILICON NITRIDE.DANFORTH SC; JENNINGS HM; RICHMAN MH et al.1976; METALLOGRAPHY; U.S.A.; DA. 1976; VOL. 9; NO 4; PP. 361-365; BIBL. 9 REF.Article

VERBESSERTE SILIZIUMNITRID-WERKSTOFFE FUER HOCHLEISTUNGSLAGER = MATERIAUX AMELIORES A BASE DE NITRURE DE SILICIUM POUR DES PALIERS DE GRANDE CAPACITEMECKELBURG E.1975; ANTRIEBSTECHNIK; DTSCH.; DA. 1975; VOL. 14; NO 10; PP. 596-598; ABS. ANGL. FR.; BIBL. 3REF.Article

QUELQUES PROPRIETES DE COUCHES DE NITRURE DE SILICIUM SUR GERMANIUMBOGATYREV VA; KAMENKOVICH EA; NEIZVESTNYJ IG et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 1; PP. 56-60; BIBL. 18 REF.Article

PARTICULARITES DE FORMATION DES PELLICULES DE NITRURE DE SILICIUM POUR EMPLOI DANS LES DIELECTRIQUES BICOUCHESGURSKIJ LI; RUMAK NV; KUKSO VV et al.1978; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; SUN; DA. 1978; NO 2; PP. 44-49; ABS. ENG; BIBL. 4 REF.Article

EFFECTS OF ELECTRON-BEAM IRRADIATION ON THE PROPERTIES OF CVD S₃N₄ FILMS IN MNOS STRUCTURES. = EFFETS DE L'IRRADIATION PAR UN FAISCEAU D'ELECTRONS SUR LES PROPRIETES DE COUCHES MINCES DE SI₃N₄ GROSSIES PAR LA METHODE DE CROISSANCE EN PHASE VAPEUR DANS DES STRUCTURES MNOSMA TP; YUN BH; DIMARIA DJ et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1599-1604; BIBL. 32 REF.Article

END POINT DETECTION IN PLASMA ETCHING BY OPTICAL EMISSION SPECTROSCOPYHIROBE K; TSUCHIMOTO T.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 1; PP. 234-235; BIBL. 6 REF.Article

SPECTRES DE VIBRATION DU NITRURE DE SILICIUMVOLGIN YU N; UKHANOV YU I.1975; OPT. I SPEKTROSK.; S.S.S.R.; DA. 1975; VOL. 38; NO 4; PP. 727-730; BIBL. 14 REF.Article

CONDUCTION IN AMORPHOUS THIN FILMS OF SILICON NITRIDE UNDER NON-UNIFORM ELECTRIC FIELDS.SULLIVAN L; CARD HC.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 11; PP. 1531-1539; BIBL. 14 REF.Article

DEEP PLANAR GALLIUM AND ALUMINIUM DIFFUSION IN SILICONJAYANT BALIGA B.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 292-296; BIBL. 15 REF.Article

HIGH-TEMPERATURE ELASTIC MODULI OF POLYCRYSTALLINE SILICON NITRIDE.FATE WA.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2375-2377; BIBL. 10 REF.Article

SILICON NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES.ARNETT PC; YUN BH.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 94-96; BIBL. 6 REF.Article

CF₄ ETCHING IN A DIODE SYSTEMBONDUR JA.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 226-231; BIBL. 17 REF.Article

FORMATION OF THIN SI₃N₄ FILMS BY NITROGEN ION IMPLANTATION INTO SILICONYADAV AD; JOSHI MC.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 59; NO 3; PP. 313-317; BIBL. 9 REF.Article

PIC K D'ABSORPTION DU SILICIUM DANS LE SILICIUM CRISTALLIN ET LES OXYDE, CARBURE ET NITRURE DE SILICIUMSOKOLENKO VI; ZHURAKOVSKIJ EA; SOKOLENKO AI et al.1979; DOKL. AKAD. NAUK UKR. S.S.R., A; UKR; DA. 1979; NO 3; PP. 209-211; ABS. ENG; BIBL. 3 REF.Article

SILICON NITRIDE LEDGE REMOVAL TECHNIQUES FOR INTEGRATED CIRCUIT DEVICES.WOHLHEITER VD.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1736-1739; BIBL. 10 REF.Article

SPECTRE DE REFLEXION DE RESEAU DU NITRURE DE SILICIUMVOLGIN YU N; DUBROVSKIJ GP; UKHANOV YU J et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 6; PP. 1671-1675; BIBL. 15 REF.Article

PARTICULARITES DU PASSAGE D'UN COURANT STATIONNAIRE DANS DES STRUCTURES MNOSGINOVKER AS; GRITSENKO VA; SINITSA SP et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 4; PP. 283-289; BIBL. 9 REF.Serial Issue

PASSIVATION OF GALLIUM ARSENIDE WITH SILICON NITRIDESEKI H; OHOSAKA S; KANDA M et al.1972; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1972; VOL. 20; NO 9-10; PP. 810-816; BIBL. 11 REF.Serial Issue

A HIGH PRODUCTION SYSTEM FOR THE DEPOSITION OF SILICON NITRIDEWOHLHEITER VD; WHITNER RA.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 7; PP. 945-948; BIBL. 8 REF.Serial Issue

ETUDE DE L'INSTABILITE DE LA CONDUCTION DES STRUCTURES MOS A NITRURE, LIEE A LA VALEUR DE LA CHARGE QUI S'ECOULEMASLOVSKIJ VM; NAGIN AP; POSPELOV VV et al.1979; ZH. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 9; PP. 1855-1861; BIBL. 16 REF.Article

EVALUATION OF A FUNDAMENTAL APPROACH FOR THE STATISTICAL ANALYSIS OF FRACTURE.EVANS AG; JONES RL.1978; J. AMER. CERAM. SOC.; U.S.A.; DA. 1978; VOL. 61; NO 3-4; PP. 156-160; BIBL. 11 REF.Article