Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("NIVEAU IMPURETE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 4724

  • Page / 189

Export

Selection :

  • and

DEEP LEVEL, QUENCHED-IN DEFECTS IN SILICON DOPED WITH GOLD, SILVER, IRON, COPPER OR NICKELTAVENDALE AJ; PEARTON SJ.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 9; PP. 1665-1673; BIBL. 2 P.Article

DEFECT LEVELS IN CHROMIUM-DOPED SILICONKUNIO T JR; YAMAZAKI T; OHTA E et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 155-160; BIBL. 16 REF.Article

ON THE DETERMINATION OF THE SPATIAL DISTRIBUTION OF DEEP CENTERS IN SEMICONDUCTING THIN FILMS FROM CAPACITANCE TRANSIENT SPECTROSCOPYZOHTA Y; WATANABE MO.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1809-1811; BIBL. 12 REF.Article

RIGOROUS FORMULATION OF HIGH-FIELD QUANTUM TRANSPORT APPLIED TO THE CASE OF ELECTRONS SCATTERED BY DILUTE RESONANT IMPURITIESJAUHO AP; WILKINS JW.1982; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 10; PP. 762-765; BIBL. 17 REF.Article

TWO-POINT CORRELATION FUNCTION OF THE 2D ISING MODEL WITH IMPURITY LATTICE BONDSDOTSENKO VS; DOTSENKO VS.DOTSENKO VS; DOTSENKO VS.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 17; PP. L557-L563; BIBL. 14 REF.Article

CALCUL SEMI-EMPIRIQUE DE L'ENERGIE D'IONISATION OPTIQUE DU CENTRE TL0 DANS LE CRISTAL DE KCLERMOSHKIN AN; KOTOMIN EA; EHVARESTOV RA et al.1982; OPTIKA I SPEKTROSKOPIJA; ISSN 0030-4034; SUN; DA. 1982; VOL. 53; NO 1; PP. 186-189; BIBL. 12 REF.Article

CENTRE D'IMPURETE DANS LE CHAMP D'UNE ONDE LUMINEUSE FORTEANTONYUK BP.1981; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1981; VOL. 80; NO 6; PP. 2221-2230; ABS. ENG; BIBL. 5 REF.Article

INFLUENCE OF SELF-CONSISTENCY ON THE RELAXATION NEAR A VANCY ON A SURFACE IN TRANSITION METALS.ALLAN G; LANNOO M.1976; PHYS. STATUS SOLID, B; ALLEM.; DA. 1976; VOL. 74; NO 1; PP. 409-414; ABS. FR.; BIBL. 19 REF.Article

DIFFUSION INTERBANDE DES ELECTRONS PAR LES IMPURETES A DEUX NIVEAUX DANS UN DIELECTRIQUE EXCITONIQUEGRIGORASHCHUK IM; NITSOVICH VM; TOVSTYUK KD et al.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 5; PP. 787-790; ABS. ANGL.; BIBL. 11 REF.Article

COMPARISON BETWEEN THE POINT-CHARGE ELECTROSTATIC MODEL AND THE ANGULAR OVERLAP MODEL: THE GENERAL CASE.KIBLER MR.1975; INTERNATION. J. QUANTUM CHEM.; U.S.A.; DA. 1975; VOL. 9; NO 3; PP. 403-420; ABS. FR. ALLEM.; BIBL. 22 REF.Article

LATTICE DISTORTION INDUCED BY JAHN-TELLER CENTRES.HALPERIN B; ENGLMAN R.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 23; PP. 3975-3987; BIBL. 16 REF.Article

LATTICE-RELAXATION EFFECTS AT POINT IMPERFECTIONS IN SEMICONDUCTORS.PANTELIDES ST.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 2543-2546; BIBL. 31 REF.Article

NOVEL TECHNIQUE FOR MEASURING NITROGEN PROFILES IN GAP:N.JAGDEEP SHAH; LEHENY RF; DAPKUS PD et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5244-5246; BIBL. 12 REF.Article

STUDY OF CRYSTAL FIELD SPLITTING OF PR3+ IN PRF3 BY INELASTIC NEUTRON SCATTERING.FELDMANN K; HENNIG K; KAUN LP et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 70; NO 1; PP. 71-80; ABS. RUSSE; BIBL. 22 REF.Article

THE VARIATION OF IMPURITY IONIZATION WITH DOPING IN HEAVILY DOPED GERMANIUM.ROY DK; GEORGE PJ.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 757-758; BIBL. 7 REF.Article

IONISATION PAR CHOCS DES NIVEAUX PROFONDS DANS LES SEMICONDUCTEURSKUZ'MIN VA; KRYUKOVA NN; KYUREGYAN AS et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 9; PP. 1729-1733; BIBL. 18 REF.Article

A STUDY OF ELECTRON TRAPS IN VAPOUR-PHASE EPITAXIAL GAAS.MIRCEA A; MITONNEAU A.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 8; NO 1; PP. 15-21; BIBL. 21 REF.Article

MOESSBAUER SPECTROSCOPIE VERIFICATION OF TWO DIFFERENT STATES OF IMPURITY 119SN ATOMS IN SB2TE3AMBE F; AMBE S.1973; PHYS. LETTERS, A; NETHERL.; DA. 1973; VOL. 43; NO 5; PP. 399-400; BIBL. 5 REF.Serial Issue

STUDY OF DEEP LEVEL IN BULK P-INP BY ADMITTANCE SPECTROSCOPYKUO JM; THIEL FA.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 41-43; BIBL. 13 REF.Article

ON THE NON-ADIABATIC EXCITATION OF LOCALIZED TUNNELING CENTERS IN SOLIDS.WAGNER M.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 9-10; PP. 1329-1331; BIBL. 8 REF.Article

UNE POSSIBILITE D'APPROCHE PAR LA RESONANCE DANS L'ETUDE DE L'INTERACTION D'ECHANGE ELECTRON-IMPURETE DANS LES SEMICONDUCTEURSSAVVINYKH SK.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 70; NO 1; PP. 235-240; ABS. ANGL.; BIBL. 6 REF.Article

CLUSTER CALCULATIONS OF THE EFFECTS OF SINGLE VACANCIES OF THE ELECTRONIC PROPERTIES OF PBS.HEMSTREET LA JR.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 6; PP. 2260-2270; BIBL. 19 REF.Article

DETERMINATION OF DEEP LEVELS IN SEMI-INSULATING CADMIUM TELLURIDE BY THERMALLY STIMULATED CURRENT MEASUREMENTS.SCHARAGER C; MULLER JC; STUCK R et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 1; PP. 247-253; ABS. FR.; BIBL. 26 REF.Article

IMPURITY-INDUCED TRANSITIONS IN DIFFERENTIAL SPECTROSCOPY.MATHIEU H; CAMASSEL J; AUVERGNE D et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 68; NO 2; PP. 797-804; ABS. FR.; BIBL. 22 REF.Article

LOCALIZED ELECTRONIC IMPURITY LEVELS NEAR SURFACE BANDS.IADONISI G; RAMAGLIA VM; TAGLIACOZZO A et al.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 23; PP. 4010-4022; BIBL. 36 REF.Article

  • Page / 189