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ENERGY LEVELS OF SOME RARE-EARTH RELATED IMPURETIES IN GERMANIUMPEARTON SJ.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 109; NO 2; PP. K135-K138; BIBL. 8 REF.Article

FIELD DRIFT AND HYDROGENATION OF DEEP LEVEL DEFECTS ASSOCIATED WITH 1-MEV ION-IMPLANTED OXYGEN IN GERMANIUM DIODESTAVENDALE AJ; PEARTON SJ.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3213-3215; BIBL. 36 REF.Article

ABSOLUTE ENERGY OF THE NITROGEN-RELATED ELECTRON TRAP IN GALLIUM PHOSPHIDEZDANSKY K; KRATENA L; MATYAS M JR et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 335-339; ABS. RUS; BIBL. 15 REF.Article

DEEP LEVEL STUDIES OF HG1-XCDXTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

STUDY OF THE DEEP LEVELS IN A PROTON-BOMBARDED GALLIUM ARSENIDEATANASSOV R; ASANO T; FURUKAVA S et al.1981; BULG. J. PHYS.; ISSN 0323-9217; BGR; DA. 1981; VOL. 8; NO 6; PP. 611-614; ABS. RUS; BIBL. 12 REF.Article

CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS MESFET'S ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATESSRIRAM S; DAS MB.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 586-592; BIBL. 21 REF.Article

QUENCHED-IN DEEP LEVELS IN BORON-DOPED SILICONIOANNOU DE.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 93-94; BIBL. 8 REF.Article

OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS/ALXGA1-XAS INTERFACE GROWN BY MOLECULAR BEAM EPITAXYMCAFEE SR; LANG DV; TSANG WT et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 520-522; BIBL. 13 REF.Article

A DEEP LEVEL TRANSIENT SPECTROSCOPY SYSTEM USING SINGLE-GATED SIGNAL AVERAGERATANASOV RD.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 9; PP. 1277-1279; BIBL. 3 REF.Article

EFFECT OF DEEP IMPURITY LEVELS ON SCHOTTKY BARRIER DIODE CHARACTERISTICS.KOROL AN; KITSAI MY; STRIKHA VI et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 5; PP. 375-379; BIBL. 11 REF.Article

DETECTION DES IMPURETES FORMANT DES NIVEAUX PROFONDS DANS LA ZONE PROHIBEE DE SI PAR LA METHODE CAPACITIVEBERMAN LS; KOZHUKHOVA EA; KORNILOV BV et al.1974; ZAVODSK. LAB.; S.S.S.R.; DA. 1974; VOL. 40; NO 10; PP. 1209-1211; BIBL. 8 REF.Article

EXTERNAL GENERATION OF GATE DELAYS IN A BOXCAR INTEGRATOR. APPLICATION TO DEEP LEVEL TRANSIENT SPECTROSCOPYKOSAI K.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 2; PP. 210-213; BIBL. 4 REF.Article

DEEP LEVEL CENTERS IN ORDINARY SILICON P-N JUNCTIONSFUJITA Y; SHINOHARA S.1972; J. PHYS. SOC. JAP.; JAP.; DA. 1972; VOL. 33; NO 4; PP. 1174; BIBL. 7 REF.Serial Issue

PARTICULARITES DE LA CAPACITE DES STRUCTURES P-I-N A NIVEAUX PROFONDSEREMIN VK; DANENGIRSH SG; STROKAN NB et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 1; PP. 95-98; BIBL. 8 REF.Article

ETUDE DES CENTRES D'IMPURETE PROFONDS DANS LES PHOTODIODES PAR LA METHODE DE LA TENSION THERMOSTIMULEESUSHKOV VP; TITOV MN.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 2; PP. 256-261; BIBL. 20 REF.Article

ETUDE PAR PHOTOCAPACITE DES CENTRES PROFONDS DANS GAP.VINCENT G; BOIS D; MARCHAND JJ et al.1976; REV. PHYS. APPL.; FR.; DA. 1976; VOL. 11; NO 3; PP. 393-396; ABS. ANGL.; BIBL. 25 REF.Article

ANALYSIS OF NEGATIVE RESISTANCE BASED ON SPACE-CHARGE-LAYERS OVERLAPPING IN SWITCHING DIODES WITH DEEP IMPURITY LEVELS.HARIU T; ISHIKAWA H; SHIBATA Y et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 11; PP. 1828-1836; BIBL. 14 REF.Article

CALCUL DE LA CAPACITE DE BARRIERE D'UNE JONCTION P.N A NIVEAUX DE PIEGEAGE PROFONDS, OBTENUE PAR DIFFUSIONBERMAN LS.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2375-2379; BIBL. 16 REF.Serial Issue

ON THE RELATIONSHIP BETWEEN CHARGE- AND CURRENT-BASED DLTSTHURZO I; LALINSKI T.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 1; PP. K83-K87; BIBL. 7 REF.Article

DEEP LEVEL PHOTOCAPACITANCE SPECTRA OF GREEN-EMITTING GAP LAMPS.IQBAL MZ.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 2; PP. K155-K156; BIBL. 4 REF.Article

EFFET DES NIVEAUX PROFONDS SUR LE BRUIT D'EXCES DES DIODES A BARRIERE DE SCHOTTKYKOROL AN; KITSAJ ME; STRIKHA VI et al.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 22; PP. 43-48; BIBL. 9 REF.Article

TRAPPING EFFECTS IN PULSED PHOTOCONDUCTIVITY OF ANTHRACENE CRYSTALS.GAROFANO T.1974; NUOVO CIMENTO, B; ITAL.; DA. 1974; VOL. 21; NO 2; PP. 376-394; ABS. ITAL. RUSSE; BIBL. 47 REF.Article

STUDY OF GROWN-IN DEFECTS AND EFFECT OF THERMAL ANNEALING IN AL0.3GA0.7AS AND GAAS LPE LAYERSLI SS; LIN CY; BEDAIR SM et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 273-287; BIBL. 10 REF.Article

PHOTOCONDUCTIVITE DES SEMICONDUCTEURS FORTEMENT DOPES ET COMPENSESOSIPOV VV; FOJGEL MG.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2022-2028; BIBL. 11 REF.Article

EXCLUSION DANS LES SEMIDONDUCTEURS COMPENSES A NIVEAUX D'IMPURETE PROFONDSADIROVICH EH I; ARONOV DA; KNIGIN PI et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 12; PP. 2405-2413; BIBL. 16 REF.Article

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