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SOLID SOLUBILITY AND PRECIPITATION OF PHOSPHORUS AND ARSENIC IN SILICON SOLAR CELLS FRONT LAYERNOBILI D.1982; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 4/1982/STRESA; NLD/USA/GBR; DORDRECHT; BOSTON; LONDON: D. REIDEL PUBLISHING COMPANY; DA. 1982; PP. 410-420; BIBL. 36 REF.Conference Paper

ION IMPLANTED INDUCED GIANT GETTERING OF GOLD IN SILICONBENTINI GG; LOTTI R; NIPOTI R et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 153-159; BIBL. 6 REF.Article

ISOCHRONAL ANNEALING OF SILICON-PHOSPHORUS SOLID SOLUTIONS.OSTOJA P; NOBILI D; ARMIGLIATO A et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 1; PP. 124-129; BIBL. 26 REF.Article

La mauvaise mèreCARLONI, G; NOBILI, D.Ecole (L') des Parents Paris. 1978, Num 3, pp 12-24Article

ELECTRICAL PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERSFINETTI M; NEGRINI P; SOLMI S et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 6; PP. 1313-1317; BIBL. 23 REF.Article

THE PHOTOVOLTAIC-AEOLIAN PLANT AT PASSO MANDRIOLI (ITALY)CALZOLARI PU; GARULLI A; NOBILI D et al.1980; REV. INTERNATION. HELIOTECH.; FRA; DA. 1980; 2E SEMESTRE; PP. 47-49; ABS. FRE; BIBL. 2 REF.Article

Low temperature diffusivity and precipitation of phosphorus in siliconMORETTINI, L; NOBILI, D.Materials chemistry and physics. 1984, Vol 10, Num 1, pp 21-30, issn 0254-0584Article

PREDEPOSITION IN SILICON AS AFFECTED BY THE FORMATION OF ORTHORHOMBIC SIP AND CUBIC SIO₂, P₂O₅ AT THE PSG-SI INTERFACE.SOLMI S; CELOTTI G; NOBILI D et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 5; PP. 654-660; BIBL. 20 REF.Article

High-temperature equilibrium carrier density of arenic-doped siliconDERDOUR, M; NOBILI, D; SOLMI, S et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 857-860, issn 0013-4651, 4 p.Article

Precipitation and diffusivity of arsenic in siliconANGELUCCI, R; CELOTTI, G; NOBILI, D et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 11, pp 2726-2730, issn 0013-4651Article

Deactivation kinetics in heavily arsenic-doped siliconNOBILI, D; SOLMI, S; MERLI, M et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 11, pp 4246-4252, issn 0013-4651Article

Aggregation equilibria in arsenic doped siliconDERDOUR, M; FURLAN, G; NOBILI, D et al.Solar energy materials and solar cells. 1994, Vol 32, Num 4, pp 435-441, issn 0927-0248Article

Precipitation as the phenomenon responsible for the electrically inactive arsenic in siliconNOBILI, D; CARABELAS, A; CELOTTI, G et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 4, pp 922-928, issn 0013-4651Article

Electron microscopy of As supersaturated siliconARMIGLIATO, A; NOBILI, D; SOLMI, S et al.Journal of the Electrochemical Society. 1986, Vol 133, Num 12, pp 2560-2565, issn 0013-4651Article

Phosphorus precipitation effects on open-circuit voltage in N⁺/P single crystal and polycrystalline silicon solar cellsGUERRI, S; NEGRINI, P; NOBILI, D et al.Photovoltaic solar energy conference. 5. 1984, pp 141-145Conference Paper

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