TREATMENT OF NOISE-FIGURE CALCULATIONS IN MICROWAVE TRANSISTOR AMPLIFIERSYOUNG GP; SCANLAN JO.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 1; PP. 17-18; BIBL. 5 REF.Article

COMMENT ON "THE EXACT NOISE FIGURE OF AMPLIFIERS WITH PARALLEL FEEDBACK AND LOSSY MATCHING CIRCUIT"ENGBERG J.1983; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1983; VOL. 31; NO 1; PP. 81; BIBL. 4 REF.Article

ASSESSMENT OF METHODS FOR EVALUATING THE IMMUNITY OF PCM REGENERATORS TO NEAR END CROSSTALKSEMPLE GJ; GIBBS AJ.1982; IEEE TRANSACTIONS ON COMMUNICATIONS; ISSN 0090-6778; USA; DA. 1982; VOL. 30; NO 7; PART. 2; PP. 1791-1797; BIBL. 10 REF.Article

NOISE PROPERTIES OF BALANCED AMPLIFIERSPETROV GV.1982; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1982; VOL. 53; NO 5; PP. 485-493; BIBL. 2 REF.Article

THE EXACT NOISE FIGURE OF AMPLIFIERS WITH PARALLEL FEEDBACK AND LOSSY MATCHING CIRCUITSNICLAS KB.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 5; PP. 832-835; BIBL. 11 REF.Article

NEW ESTIMATE OF THE MINIMUM NOISE FIGURE OF A M.E.S.F.E.T.BREWITT TAYLOR CR; ROBSON PN; SITCH JE et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 25; PP. 818-820; BIBL. 9 REF.Article

REDUCE THE NOISE OUTPUT OF LINEAR RF AMPLIFIERS.LOHRMANN DR; SON KS.1976; ELECTRON. DESIGN; U.S.A.; DA. 1976; VOL. 24; NO 20; PP. 82-85; BIBL. 1 REF.Article

Impact of Lateral Asymmetry of MOSFETs on the Gate-Drain Noise CorrelationROY, Ananda S; ENZ, Christian C; TAO CHUAN LIM et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 2268-2272, issn 0018-9383, 5 p.Article

OPTIMUM P.C.M. REGENATOR PERFORMANCE IN PRESENCE OF CROSSTALKGIBBS AJ; MILLOTT LJ; NICHOLSON G et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 16; PP. 490-492; BIBL. 2 REF.Article

LOW-NOISE MICROWAVE BIPOLAR TRANSISTOR WITH SUB-HALF-MICROMETER EMITTER WIDTHHSU TH; SNAPP CP.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 723-730; BIBL. 12 REF.Article

SILICON IMPLANTED SUPER LOW-NOISE GAAS MESFETFENG M; EU VK; SIRACUSA M et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 21-23; BIBL. 5 REF.Article

NEW ULTRA LOW-NOISE AVALANCHE PHOTODIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONSCAPASSO F.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 12-13; BIBL. 5 REF.Article

LOW NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MADE BY ION IMPLANTATIONFENG M; EU VK; KANBER H et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 802-804; BIBL. 10 REF.Article

SIMPLIFY N.F. CALCULATIONS OF CASCADED TWO-PORTS.GARDIOL FE.1978; MICROWAVES; U.S.A.; DA. 1978; VOL. 17; NO 4; PP. 80-81Article

The frequency response of bipolar transistor noise figureSHAHRIAR MOINIAN; CHOMA, J. JR.IEEE transactions on circuits and systems. 1986, Vol 33, Num 1, pp 72-76, issn 0098-4094Article

High-frequency admittance of high-electron-mobility transistors (HEMTs)VAN DER ZIEL, A; WU, E. N.Solid-state electronics. 1983, Vol 26, Num 8, pp 753-754, issn 0038-1101Article

Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTsSANABRIA, Christopher; HONGTAO XU; PALACIOS, Tomas et al.DRC : Device research conference. 2004, pp 43-44, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Hybrid fiber amplifiers consisting of cascaded TDFA and EDFA for WDM signalsSAKAMOTO, Tadashi; AOZASA, Shin-Ichi; YAMADA, Makoto et al.Journal of lightwave technology. 2006, Vol 24, Num 6, pp 2287-2295, issn 0733-8724, 9 p.Article

Transceiver cascade system analysis and design via a contribution methodVICTOR, Alan M; STEER, Michael B.International journal of RF and microwave computer-aided engineering. 2006, Vol 16, Num 4, pp 338-345, 8 p.Article

The effect of gate leakage on the noise figure of AlGaN/GaN HEMTsSANABRIA, Chris; CHAKRABORTY, Arpan; HONGTAO XU et al.IEEE electron device letters. 2006, Vol 27, Num 1, pp 19-21, issn 0741-3106, 3 p.Article

Differential Noise Figure De-Embedding: A Comparison of Available ApproachesROBENS, Markus; WUNDERLICH, Ralf; HEINEN, Stefan et al.IEEE transactions on microwave theory and techniques. 2011, Vol 59, Num 5, pp 1397-1407, issn 0018-9480, 11 p.Article

Noise Figure Formulas of RF MOSFETs in the Presence of Digital Substrate NoiseCHAN HYEONG PARK; OH, Yongho; RIEH, Jae-Sung et al.IEEE microwave and wireless components letters. 2010, Vol 20, Num 11, pp 622-624, issn 1531-1309, 3 p.Article

New Method for Noise-Parameter Measurement of a Mismatched Linear Two-Port Using Noise Power Wave FormalismPASQUET, Daniel; BOURDEL, Emmanuelle; QUINTANEL, Sébastien et al.IEEE transactions on microwave theory and techniques. 2008, Vol 56, Num 9, pp 2136-2142, issn 0018-9480, 7 p.Article

Simulation and experimental characterization of Raman/EDFA hybrid amplifier with enhanced performanceTIWARI, Umesh; THYAGARAJAN, K; SHENOY, M. R et al.Optics communications. 2009, Vol 282, Num 8, pp 1563-1566, issn 0030-4018, 4 p.Article

Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTsSANABRIA, Christopher; HONGTAO XU; PALACIOS, Tomas et al.IEEE transactions on microwave theory and techniques. 2005, Vol 53, Num 2, pp 762-769, issn 0018-9480, 8 p.Article