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DEVELOPMENT OF THE EQUIPMENT FOR THE ASPHALT COATED STEEL PIPE PILESWATANABE Y; KIMURA T.1980; TETSU TO HAGANE; JPN; DA. 1980-06; VOL. 66; NO 7; PP. 1042-1046; BIBL. 7 REF.Article

GROUP SYMMETRY OF CHEMICAL ELEMENTSFET AI.1981; ZH. FIZ. KHIM.; SUN; DA. 1981-03; VOL. 55; NO 3; PP. 622-629; BIBL. 9 REF.Article

VARIETES ALLOTROPIQUES DU CARBONENIKEROV MV; BOCHVAR DA; STANKEVICH IV et al.1982; Z. STRUKT. HIM.; ISSN 0136-7463; SUN; DA. 1982; VOL. 23; NO 1; PP. 177-179; BIBL. 3 REF.Article

DISPOSITIF POUR LE REFROIDISSEMENT D'ECHANTILLONS MINCES IRRADIES PAR UN FAISCEAU INTENSE D'ELECTRONSKASHNIKOV BP.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 4; PP. 233-234; BIBL. 4 REF.Article

IDENTIFICATION OF DIAMOND BY ELECTRON REFLECTIONYAMAGUCHI S.1982; FRESENIUS Z. ANAL. CHEM.; ISSN 0016-1152; DEU; DA. 1982; VOL. 312; NO 6; PP. 545-546; BIBL. 3 REF.Article

STRUCTURAL PHASE TRANSITION OF HIGH DENSITY HYDROGEN AT ZERO TEMPERATURE. INAGARA H; MIYAGI H; NAKAMURA T et al.1980; PROG. THEOR. PHYS.; ISSN 0033-068X; JPN; DA. 1980; VOL. 64; NO 3; PP. 731-746; BIBL. 26 REF.Article

Z1-DEPENDENCE OF LOW ENERGY RANGES IN SIGARTNER K; HEHL K.1981; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 2; PP. K109-K111; BIBL. 7 REF.Article

DAS 37. HAERTEREI-KOLLOQUIUM 7. BIS 9. OKTOBER 1981 IN WIESBADEN = THE 37. HAERTEREI-KOLLOQUIUM ON OCTOBER 7-9, 1981 IN WIESBADENTHIEDE HJ.1981; HAERTEREI-TECH. MITT.; DEU; DA. 1981-12; VOL. 36; NO 6; PP. 327-331Conference Paper

STUDIES OF THE SI/SIO2 INTERFACE BY ANGULAR DEPENDENT X-RAY PHOTOELECTRON SPECTROSCOPYFINSTER J; SCHULZE D.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. 505-517; ABS. GER; BIBL. 38 REF.Article

DOES CESBOD3 EXIST.HEWSTON TA.1983; INORGANIC CHEMISTRY; ISSN 0020-1669; USA; DA. 1983; VOL. 22; NO 14; PP. 1967; BIBL. 5 REF.Article

ANALYSES OF MORPHOLOGICALLY STABLE HORIZONTAL RIBBON CRYSTAL GROWTHGLICKSMAN ME; VOORHEES PW.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 1; PP. 161-179; BIBL. 6 REF.Article

ION OXIDATION OF SI(111)DAIMON H; MURATA Y.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 11; PP. L718-L720; BIBL. 11 REF.Article

OXIDATION-INDUCED POINT DEFECTS IN SILICONANTONIADIS DA.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1093-1097; BIBL. 29 REF.Article

OBSERVATION DE LA FORMATION ET DU MOUVEMENT DES DISLOCATIONS DANS LES CRISTAUX DE SILICIUM PAR LA METHODE DE VISUALISATION DES TOPOGRAPHIES DE RAYONS XAVETYAN KT; BAGDASARYAN TG; ANCHARAKYAN SA et al.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 6; PP. 1640-1644; BIBL. 7 REF.Article

KINETICS OF HIGH PRESSURE OXIDATION OF SILICON IN PYROGENIC STEAMRAZOUK RR; LIE LN; DEAL BE et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 10; PP. 2214-2220; BIBL. 15 REF.Article

MORPHOLOGICAL CHANGES IN MIGRATION IMAGING FILM CAUSED BY SUNLIGHTBUCKLEY DA.1981; SURF. TECHNOL.; ISSN 0376-4583; CHE; DA. 1981; VOL. 12; NO 4; PP. 391-393; BIBL. 9 REF.Article

ETUDE PAR DIFFRACTION ELECTRONIQUE DE LA STRUCTURE DE LA PHASE CRISTALLINE DU CARBONE C8MATYUSHENKO NN; STREL'NITSKIJ VE; GUSEV VA et al.1981; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1981; VOL. 26; NO 3; PP. 484-487; BIBL. 7 REF.Article

MICRODISTRIBUTION OF OXYGEN IN SILICONMURGAI A; CHI JY; GATOS HC et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1182-1186; BIBL. 19 REF.Article

STRUCTURE MODIFICATION OF BETA -BORON BY PLASMA SPRAYINGKUMAR K; DAS D.1980; METALL. TRANS. A; ISSN 0360-2133; USA; DA. 1980; VOL. 11; NO 8; PP. 1489-1492; BIBL. 6 REF.Article

ATOMIC PSEUDOPOTENTIAL OF POLYVALENT CRYSTALS SUCH AS SIOHKOSHI I.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 101; NO 1; PP. 373-376; ABS. GER; BIBL. 10 REF.Article

STRUCTURAL TRANSFORMATIONS IN SOLID NITROGEN AT HIGH PRESSURENOSE S; KLEIN ML.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 16; PP. 1207-1210; BIBL. 16 REF.Article

AN ENTROPY BARRIER AGAINST VACANCY-INTERSTITIAL RECOMBINATION IN SILICONGOESELE U; FRANK W; SEEGER A et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 1; PP. 31-33; BIBL. 26 REF.Article

DEFECT ELIMINATING USING SI3N4 FILM PATTERNSMADA Y.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 11; PP. L683-L684; BIBL. 8 REF.Article

THE OXIDATION OF POLYCRYSTALLINE BORON: THE INTERPRETATION OF AES AND ELS RESULTSROGERS JW JR; KNOTEK ML.1982; APPL. SURF. SCI.; ISSN 0378-5963; NLD; DA. 1982; VOL. 13; NO 3-4; PP. 352-366; BIBL. 38 REF.Article

MISE EN EVIDENCE DE LIGNES DE DISLOCATIONS DANS LE GERMANIUM PAR ATTAQUEGOROKHOV EB.1982; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 6; PP. 885-887; BIBL. 5 REF.Article

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