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FAST NONRADIATIVE RECOMBINATION IN SPUTTERED A-SI:HCOLLINS RW; VIKTOROVITCH P; WEISFIELD RL et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 6643-6649; BIBL. 18 REF.Article

THE INFLUENCE OF INTRINSIC DEFECTS OF THE DEGRADATION AN LUMINESCENCE OF GAAS AND OTHER III-V COMPOUNDSFRANCK W; GOESELE U.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 23; NO 3; PP. 303-309; BIBL. 34 REF.Article

DETERMINATION DES PARAMETRES DE RECOMBINAISON DE L'IMPURETE NI DANS LES CRISTAUX DE CDSBOBYL AV; SHEJNKMAN MK.1980; UKR. FIZ. Z. (KIEV, 1967); ISSN 0503-1265; UKR; DA. 1980; VOL. 25; NO 1; PP. 78-85; ABS. ENG; BIBL. 11 REF.Article

THE INFLUENCE OF BULK NONRADIATIVE RECOMBINATION IN THE WIDE BAND-GAP REGIONS OF MOLECULAR BEAM EPITAXIALLY GROWN GAAS-AL GA1-XAS DH LASERSTSANG WT.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 3; PP. 245-248; BIBL. 22 REF.Article

ETUDE DE LA NATURE DE LA RELAXATION NON RADIATIVE D'ENERGIE D'EXCITATION DANS LES MILIEUX CONDENSES A TENEUR ELEVEE EN ACTIVATEURVORON'KO YU K; MAMEDOV TG; OSIKO VV et al.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 71; NO 2; PP. 478-496; ABS. ANGL.; BIBL. 25 REF.Article

RECOMBINAISON NON RADIATIVE DANS LES SEMICONDUCTEURS. II. RECOMBINAISON AUGERNAKWASKI W.1977; ROZPR. ELEKTROTECH.; POLSKA; DA. 1977; VOL. 23; NO 3; PP. 553-568; ABS. ANGL. FR. ALLEM. RUSSE; BIBL. 3 P. 1/2Article

HYSTERESIS DE THERMOCONCENTRATION DANS UN PHOTOCONDUCTEURBALKAREJ YU I; EHPSHTEJN EH M.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 9; PP. 1704-1707; BIBL. 3 REF.Article

INFLUENCE OF CRYSTAL DEFECTS ON THE LUMINESCENCE OF GAPWERKHOVEN C; VAN OPDORP C; VINK AT et al.1978; PHILIPS TECH. REV.; NLD; DA. 1978-1979; VOL. 38; NO 2; PP. 41-50; BIBL. 15 REF.Article

ETUDES PAR SONDE ELECTRONIQUE DES PROCESSUS DE RECOMBINAISON NON RADIATIVE DANS LES STRUCTURES A BASE DE GAAS FAIBLEMENT DOPEKONNIKOV SG; KONSTANTINOV AO; SOBOLEV MM et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 1019-1022; BIBL. 4 REF.Article

TEMPERATURE DEPENDENCE OF INTERFACE RECOMBINATION AND RADIATIVE RECOMBINATION IN (AL,GA)AS HETEROSTRUCTUREST'HOOFT GW; VAN OPDORT C.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 813-815; BIBL. 13 REF.Article

THE NON-RADIATIVE DECAY OF FREE EXCITONS AS MEDIATED BY IONIZED DONORS IN SEMICONDUCTORS.SINGH J; LANDSBERG PT.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 19; PP. 3627-3631; BIBL. 7 REF.Article

CHARACTERISTICS OF THE ELECTRON TRAPS PRODUCED BY ELECTRON IRRADIATION IN N-TYPE GERMANIUMPOULIN F; BOURGOIN JC.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 6788-6794; BIBL. 11 REF.Article

NONRADIATIVE AND RADIATIVE RECOMBINATION IN LEAD CHALCOGENIDESZIEP O; GENZOW D; MOCKER M et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; DDR; DA. 1980; VOL. 99; NO 1; PP. 129-138; ABS. GER; BIBL. 24 REF.Article

NONRADIATIVE RECOMBINATION IN GAALAS PROTON-BOMBARDED STRIPE-GEOMETRY LASERSNELSON RJ; RODE DL.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5135-5138; BIBL. 18 REF.Article

NON-RADIATIVE RECOMBINATION IN CHALCOGENIDE GLASSES.STREET RA.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 5; PP. 363-365; BIBL. 19 REF.Article

DETERMINATION OF NONRADIATIVE DECAY RATE IN ELECTRON-HOLE DROPS IN GE AT 1.6OK.LEHENY RF; SHAH J; VOOS M et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 8; PP. 819-821; BIBL. 13 REF.Article

ATHERMAL ANNEALING OF STRUCTURE DAMAGE IN GAASLOMAKO VM; NOVOSEVOV AM.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 160; NO 2; PP. 557-564; ABS. RUS; BIBL. 13 REF.Article

RECOMBINAISON AUGER NON RADIATIVE D'ELECTRONS SUR TROIS CENTRESKUDYKINA TA; TOLPYGO KB; SHEJNKMAN MK et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 6; PP. 809-815; ABS. ENG; BIBL. 24 REF.Article

EFFECT OF THE 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTRES ON THE INTRINSIC LUMINESCENCE INTENSITY IN N-GAAS.GLINCHUK KD; PROKHOROVICH AV.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 2; PP. 777-785; ABS. RUSSE; BIBL. 15 REF.Article

EXCITED STATES AND ENERGY TRANSFER FROM DONOR CATIONS TO RARE EARTHS IN THE CONDENSED PHASE.REISFELD R.1976; STRUCT. AND BONDG; GERM.; DA. 1976; VOL. 30; NO 65-97; BIBL. 2 P.Article

MEASUREMENT OF SPONTANEOUS EMISSION EFFICIENCY AND NONRADIATIVE RECOMBINATIONS IN 1.58-UMWANELENGTH GAINASP CRYSTALSASADA M; SUEMATSU Y.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 353-355; BIBL. 14 REF.Article

NONRADIATIVE RECOMBINATION IN INGAASP/INP LIGHT SOURCES CAUSING LIGHT EMITTING DIODE OUTPUT SATURATION AND STRONG LASER-THRESHOLD-CURRENT TEMPERATURE SENSITIVITYUJI T; IWAMOTO K; LANG R et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 193-195; BIBL. 10 REF.Article

STUDY OF NON-LINEAR EXTRINSIC LUMINESCENCE IN GAAS. III: SUBLINEAR EMISSION DUE TO AUGER TRANSITIONS IN RADIATIVE CENTRESGLINCHUK KD; PROKHOROVICH AV; VOVNENKO VI et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 1; PP. 121-128; ABS. RUS; BIBL. 15 REF.Article

INFRARED-INDUCED CHANGES IN THE EMISSION SPECTRA OF ZNS POWDER PHOSPHORSKRAMER B; IZAGUIRRE F; KALIKSTEIN K et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 7; PP. 4229-4232; BIBL. 19 REF.Article

COMMENTS ON THE NATURE OF ELECTRON LEAKAGE IN IN GA ASP/INP DOUBLE HETEROSTRUCTURECHIU LC; YARIV A.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 2; PP. 305-306; BIBL. 8 REF.Article

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