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EVALUATION OF AN INTEGRAL IN THE THEORY OF NON VOLATILE SEMICONDUCTOR MEMORIES.FERRIS PRABHU AV; LUBART ND; MEDVE TJ et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 1; PP. 74-75; BIBL. 13 REF.Article

GIMOS. A NONVOLATILE MOS MEMORY TRANSISTORHSU ST.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 3; PP. 424-433; BIBL. 10 REF.Article

NON VOLATILE MEMORY STRUCTURE1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 825-835; ABS. FRE; BIBL. DISSEM.Conference Paper

ADD A STANDLY BATTERY TO A RAMBOYLE PW; WENTIN RF.1978; ELECTRON. DESIGN; USA; DA. 1978; VOL. 26; NO 15; PP. 80-83; BIBL. 1 REF.Article

MEMOIRE A SEMICONDUCTEUR NON VOLATILE REPROGRAMMABLE ELECTRIQUEMENTTARUI Y; HAYASHI Y; NAGAI K et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 248-255; ABS. ANGL.; BIBL. 6 REF.Article

MEGABIT BUBBLE MEMORY FOR NON-VOLATILE STORAGESIEGEL P.1980; ELECTRON. ENJ.; ISSN 0013-4902; GBR; DA. 1980; VOL. 52; NO 634; PP. 51-59; (5 P.)Article

NON-VOLATILE R.A.M.S IN CONSUMER CIRCUITSWALLACE C.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 3; PP. 100-103; (3 P.)Article

BUBBLE MEMORIES-MASS STORAGE IN THE PALM OF YOUR HANDCOX G.1979; INSTRUM. CONTROL SYST.; USA; DA. 1979; VOL. 52; NO 6; PP. 59-62Article

NON-VOLATILE MEMORY PROPERTIES OF METAL/SRTIO₃/SIO₂/SI STRUCTURESHUANG TY; GRANNEMANN WW.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 2; PP. 159-166; BIBL. 16 REF.Article

ELECTRICAL CHARACTERISTICS, RELIABILITY AND APPLICATION OF THE 16 KBIT EEPROMWAKIMOTO H; NABETANI S; SATO N et al.1983; HITACHI REVIEW; ISSN 0018-277X; JPN; DA. 1983; VOL. 32; NO 1; PP. 45-48; BIBL. 4 REF.Article

LES MEMOIRES NON VOLATILES ELECTRIQUEMENT REPROGRAMMABLES. BILAN ET PERSPECTIVES. I: LES PRINCIPES PHYSIQUES ET LEUR MISE EN OEUVREROUX P; CAZENAVE P; DOM JP et al.1983; ONDE ELECTRIQUE; ISSN 0030-2430; FRA; DA. 1983; VOL. 63; NO 3; PP. 29-33; ABS. ENG; BIBL. 21 REF.Article

PLATINUM-INDUCED HYSTERISIS AND NONVOLATILE MEMORY PROPERTIES IN MOS SYSTEMS (PLATMOS)NASSIBIAN AG; FARAONE L.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1757-1761; BIBL. 12 REF.Article

DES "EEPROM" QUI POURRAIENT ETRE LES PREMIERES RAM NON VOLATILESARMAILLE J.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 280; PP. 37-39Article

FUNCTIONAL MODELLING OF NON-VOLATILE MOS MEMORY DEVICES.CARD HC; ELMASRY MI.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 10; PP. 863-870; BIBL. 32 REF.Article

A HIGH SPEED 16K BIT ELECTRICAUCHIUMI K; KIHARA T; ITOH Y et al.1979; MIDCON 79 CONFERENCE/1979/CHICAGO IL; USA; LOS ANGELES: IMPR. AMERICAN OFFSET PRINTERS; DA. 1979; NO 21/2; 6 P.; BIBL. 7 REF.Conference Paper

SOME CHARACTERISTICS OF NONVOLATILE CDSE THIN-FILM MEMORY TRANSISTORS.YU KK.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 591-593; BIBL. 8 REF.Article

A NEW APPROACH FOR THE FLOATING-GATE MOS NONVOLATILE MEMORY.HAN SHENG LEE.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 7; PP. 475-476; BIBL. 2 REF.Article

ELECTROCHROMIC MEMORY DEGRADATION IN WO_X-LICLO₄/PC CELLSMORITA H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PART. 1; PP. 655-658; BIBL. 7 REF.Article

CHALCOGENIDE MEMORY MATERIALSHOLMBERG SH; SHANKS RR; BLUHM VA et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 3; PP. 333-344; BIBL. 17 REF.Article

NONVOLATILE SEMICONDUCTOR STORAGE FOR VERY SMALL SYSTEMSCRAYCRAFT DG.1979; MIDCON 79 CONFERENCE/1979/CHICAGO IL; USA; LOS ANGELES: IMPR. AMERICAN OFFSET PRINTERS; DA. 1979; NO 26/1; 4 P.Conference Paper

ELECTRICAL AND CHARGE STORAGE CHARACTERISTICS OF THE TANALUM OXIDE-SILICON DIOXIDE DEVICEANGLE RL; TALLEY HE.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 11; PP. 1277-1283; BIBL. 18 REF.Article

INTEGRATED CIRCUITS - MOS VLSI MEMORY1978; INTERNATIONAL ELECTRON DEVICES MEETING/1978-12-04/WASHINGTON DC; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS; DA. 1978; 336-363; BIBL. DISSEM.Conference Paper

LA NOVRAM: A LA FOIS RAM ET ROM1978; INTER ELECTRON.; FRA; DA. 1978; NO 273; PP. 44-45Article

ELECTRICALLY ERASABLE BURIED-GATE NONVOLATILE READ-ONLY MEMORY.NEUGEBAUER CA; BURGESS JF; STEIN L et al.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 613-618; BIBL. 10 REF.Article