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A NEW TECHNIQUE FOR AUTOMATIC C-V AND G-V MEASUREMENTSFREEMAN M; NOTTENBURG R; DUBOW J et al.1980; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1980; VOL. 13; NO 3; PP. 328-334; BIBL. 9 REF.Article

EFFECT OF PORE WATER AND ADSORBED MOISTURE ON THE DI-ELECTRIC PROPERTIES OF GREEN RIVER OIL SHALENOTTENBURG R; RAJESHWAR K; FREEMAN M et al.1979; THERMOCHIM. ACTA; NLD; DA. 1979; VOL. 31; NO 1; PP. 39-46; BIBL. 15 REF.Article

AUTOMATION OF LASER-FLASH THERMAL DIFFUSIVITY MEASUREMENTSWANG Y; FREEMAN M; NOTTENBURG R et al.1980; THERMOCHIM. ACTA; NLD; DA. 1980; VOL. 37; NO 3; PP. 287-290; BIBL. 8 REF.Article

A.C. ELECTRICAL CONDUCTIVITY OF POTASSIUM PERCHLORATENOTTENBURG R; RAJESHWAR K; PAIVERNEKER V et al.1980; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1980; VOL. 41; NO 3; PP. 271-277; BIBL. 28 REF.Article

DYNAMIC DIELECTRIC ANALYSIS OF SOLIDSNOTTENBURG R; RAJESHWAR K; FREEMAN M et al.1979; J. SOLID STATE CHEM.; GBR; DA. 1979; VOL. 28; NO 2; PP. 195-208; BIBL. 27 REF.Article

THERMAL DIFFUSIVITY OF GREEN RIVER OIL SHALE BY THE LASER-FLASH TECHNIQUEWANG Y; DUBOW J; RAJESHWAR K et al.1979; THERMOCHIM. ACTA; NLD; DA. 1979; VOL. 28; NO 1; PP. 23-35; BIBL. 19 REF.Article

ELECTRICAL CONDUCTION IN AMMONIUM AND ALKALI METAL PERCHLORATESRAJESHWAR K; NOTTENBURG R; PAI VERNEKER VR et al.1980; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1980; VOL. 72; NO 12; PP. 6678-6684; BIBL. 35 REF.Article

CONCURRENT DIELECTRIC ANALYSIS-DIFFERENTIAL THERMAL ANALYSISNOTTENBURG R; FREEMAN M; RAJESHWAR K et al.1979; ANAL. CHEM.; USA; DA. 1979; VOL. 51; NO 8; PP. 1149-1155; BIBL. 14 REF.Article

ELECTRICAL CONDUCTION MECHANISMS IN GREEN RIVER OIL SHALERAJESHWAR K; NOTTENBURG R; DUBOW J et al.1978; THERMOCHIM. ACTA; NLD; DA. 1978; VOL. 27; NO 1-3; PP. 357-366; BIBL. 22 REF.Article

V2O5-SI PHOTOVOLTAIC CELLSGOBRECHT J; NOTTENBURG R; CHEWEY K et al.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 4; NO 2; PP. 179-186; BIBL. 13 REF.Article

FREQUENCY DEPENDENCE OF THE ELECTRICAL CONDUCTIVITY OF MCLO4 (M=K,RB,CS) COMPOUNDSRAJESHWAR K; NOTTENBURG R; PAIVERNEKER VR et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 1; PP. 245-249; ABS. GER; BIBL. 15 REF.Article

DYNAMIC DIELECTRIC ANALYSIS; A NEW THERMAL ANALYSIS TECHNIQUERAJESHWAR K; NOTTENBURG R; FREEMAN M et al.1979; THERMOCHIM. ACTA; NLD; DA. 1979; VOL. 33; PP. 157-168; BIBL. 17 REF.Article

MEASUREMENT OF THERMAL CONDUCTIVITY OF GREEN RIVER OIL SHALES BY A THERMAL COMPARATOR TECHNIQUENOTTENBURG R; KRISHNAN RAJESHWAR; ROSENVOLD R et al.1978; FUEL; GBR; DA. 1978; VOL. 57; NO 12; PP. 789-795; BIBL. 23 REF.Article

12x622 Mbit/s, DC coupled synchronous optical receiver array for parallel digital datalinksGOVINDARAJAN, M; SIALA, S; NOTTENBURG, R. N et al.Electronics Letters. 1994, Vol 30, Num 14, pp 1177-1178, issn 0013-5194Article

DC to 2.5 Gb/s×4 p-i-n/HBT optical receiver array with low crosstalkGOVINDARAJAN, M; SIALA, S; NOTTENBURG, R. N et al.IEEE photonics technology letters. 1993, Vol 5, Num 12, pp 1397-1400, issn 1041-1135Article

Optical receiver systems for high speed parallel digital data linksGOVINDARAJAN, M; SIALA, S; NOTTENBURG, R. N et al.Journal of lightwave technology. 1995, Vol 13, Num 7, pp 1555-1565, issn 0733-8724Article

An n-CdSe/SnO2/n-Si tandem electrochemical solar cellGOBRECHT, J; POTTER, R; NOTTENBURG, R et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 11, pp 2280-2283, issn 0013-4651Article

Compensation effects in Si-doped GaAs grown by molecular beam epitaxyNOTTENBURG, R; BÜHLMANN, H. J; FREI, M et al.Applied physics letters. 1984, Vol 44, Num 1, pp 71-73, issn 0003-6951Article

High-speed In GaAs(P)/InP double-heterostructure bipolar transistorsNOTTENBURG, R. N; BISCHOFF, J.-C; PANISH, M. B et al.IEEE electron device letters. 1987, Vol 8, Num 6, pp 282-284, issn 0741-3106Article

High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxyNOTTENBURG, R. N; TEMKIN, H; PANISH, M. B et al.Applied physics letters. 1986, Vol 49, Num 17, pp 1112-1114, issn 0003-6951Article

Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transportLEVI, A. F. J; JALALI, B; NOTTENBURG, R. N et al.Applied physics letters. 1992, Vol 60, Num 4, pp 460-462, issn 0003-6951Article

AlAs/GaAs tunnel emitter bipolar transistorLEVI, A. F. J; NOTTENBURG, R. N; CHEN, Y. K et al.Applied physics letters. 1989, Vol 54, Num 22, pp 2250-2252, issn 0003-6951, 3 p.Article

High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasersSIALA, S; HANMIN ZHAO; GOVINDARAJAN, M et al.IEEE photonics technology letters. 1994, Vol 6, Num 6, pp 687-689, issn 1041-1135Article

Hot-electron InGaAs/InP heterostructure bipolar transistors with fT of 110 GHzNOTTENBURG, R. N; CHEN, Y. K; PANISH, M. B et al.IEEE electron device letters. 1989, Vol 10, Num 1, pp 30-32, issn 0741-3106Article

InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus Ic characteristicNOTTENBURG, R. N; TEMKIN, H; PANISH, M. B et al.IEEE electron device letters. 1986, Vol 7, Num 11, pp 643-645, issn 0741-3106Article

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