Ion-induced annealing of damage in GaAs implanted with argon ionsAKIMOV, A. N; VLASUKOVA, L. A; GUSAKOV, G. A et al.Radiation effects and defects in solids. 1994, Vol 129, Num 3-4, pp 147-154, issn 1042-0150Article

Electrochemical properties and analytical prospects of film electrodes having non-ionic surfactant selectivityCHERNOVA, R. K; KULAPINA, E. G; MATEROVA, E. A et al.Journal of analytical chemistry (New York, NY). 1992, Vol 47, Num 8, pp 1074-1080, issn 1061-9348, 2Article

Extraction chromatographic behaviour of Am/IV/ in the system : H₂SO₄-K₁₀P₂W₁₇O₆₁ - Primene JMTKREMLIAKOVA, N. YU; NOVIKOV, A. P; MYASOEDOV, B. F et al.Journal of radioanalytical and nuclear chemistry. 1990, Vol 145, Num 3, pp 183-187, issn 0236-5731, 5 p.Article

Recuit des défauts et activité électrique de l'impureté lors du dopage du silicium par des ions de forte intensitéKOMAROV, F. F; NOVIKOV, A. P; RADISHEVSKIJ, I. A et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 9, pp 1726-1728, issn 0015-3222Article

Induction heating used for automatic hardfacing of the valves of gas truck engines = Utilisation du chauffage par induction pour le rechargement automatique de soupapes de moteurs de camionsBUDZAN, B. P; MAKSIMOVICH, V. I; BAISHTRUK, E. N et al.Automatic Welding. 1982, Vol 35, Num 8, pp 41-42, issn 0005-108XArticle

Preconcentration of neptunium by supported liquid membranes for luminescent analysis of environmental samplesIVANOVA, S. A; MIKHEEVA, M. N; NOVIKOV, A. P et al.Journal of radioanalytical and nuclear chemistry. 1994, Vol 186, Num 4, pp 341-352, issn 0236-5731Article

Kinetics of americium(VI) mass transfer through solid supported liquid membrane with HDEHPMIKHEEVA, M. N; NOVIKOV, A. P; MYASOEDOV, B. F et al.Journal of radioanalytical and nuclear chemistry. 1994, Vol 185, Num 2, pp 265-271, issn 0236-5731Article

Recovery of the electrical properties and crystal structure of semi-insulating GaAs at highly intensive implantation of argon ionsBUMAI, Y. A; DOMANEVSKII, D. S; KOMAROV, F. F et al.Radiation effects express section. 1987, Vol 1, Num 2, pp 101-108Article

Dynamic annealing of damage in Ar⁺-implanted GaAs crystalsKUTAS, A. A; KOVYAZINA, T. V; AKIMOV, A. N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 1, pp 32-35, issn 0921-5107Article

Durcissement du bismuth par irradiation par des ions d'azote ayant une énergie de 16 MeVZHUKOVA, S. I; NESHOV, F. G; NOVIKOV, A. P et al.Fizika metallov i metallovedenie. 1989, Vol 68, Num 2, pp 397-399, issn 0015-3230Article

Défauts résiduels dans le silicium dus à l'implantation d'ions As+ en régime d'autorecuitKOMAROV, F. F; KOTOV, E. V; NOVIKOV, A. P et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 10, pp 1863-1867, issn 0015-3222Article

Crystallization and defects annealing during highly intensive ion implantation in siliconKOMAROV, F. F; NOVIKOV, A. P; SHIRYAEV, S. YU et al.Radiation effects. 1985, Vol 85, Num 6, pp 243-247, issn 0033-7579Article

Emulsion membrane extraction of Am(III) and Am(IV) in systems with tertiary and secondary aminesMYASOEDOV, B. F; NOVIKOV, A. P; MILYULPVA, M. S et al.Journal of radioanalytical and nuclear chemistry. 1990, Vol 142, Num 2, pp 481-487, issn 0236-5731Article

Buried Si₃N₄ layers in silicon produced by high-intensity implantation and rapid thermal annealingGRIBKOVSKII, R. V; KOMAROV, F. F; NOVIKOV, A. P et al.Vacuum. 1990, Vol 42, Num 1-2, pp 111-112, issn 0042-207X, 2 p.Conference Paper

Production d'une couche enterrée de Si3N4 β par irradiation ionique de grande intensité du siliciumBACHILO, I. A; GRIBKOVSKIJ, R. V; KOMAROV, F. F et al.Žurnal tehničeskoj fiziki. 1989, Vol 59, Num 1, pp 200-202, issn 0044-4642Article

Structural analysis of silicon doped with high doses of C⁺ ionsBACHILO, I. A; KOMAROV, F. F; NOVIKOV, A. P et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp 231-238, issn 0031-8965Article

Etude de la formation de couches monocristallines de SiC-β sur Si par la méthode d'implantation d'ions à grande densitéALEKSANDROV, P. A; BARANOVA, E. K; DEMAKOV, K. D et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 5, pp 920-922, issn 0015-3222Article

Thermodynamics of the ferromagnetic phase transition in nearly half metallic CoS2 at high pressuresELKIN, F. S; ZIBROV, I. P; NOVIKOV, A. P et al.Solid state communications. 2014, Vol 181, pp 41-45, issn 0038-1098, 5 p.Article

Problems of determining radionuclide content and speciation in natural samplesMYASOEDOV, B. F; NOVIKOV, A. P; PAVLOTSKAYA, F. I et al.Journal of analytical chemistry (New York, NY). 1996, Vol 51, Num 1, pp 114-120, issn 1061-9348Article

Mechanism of ion-induced crystallization of siliconNOVIKOV, A. P; GUSAKOV, G. A; KOMAROV, F. F et al.Soviet physics. Semiconductors. 1992, Vol 26, Num 10, pp 1034-1036, issn 0038-5700Article

Extraction chromatographic separation of radionuclides of strontium, cesium and barium with the use of TVEX-DCH18C6KREMLIAKOVA, N. Y; NOVIKOV, A. P; MYASOEDOV, B. F et al.Journal of radioanalytical and nuclear chemistry. 1990, Vol 145, Num 1, pp 23-28, issn 0236-5731, 6 p.Article

Residual defects in silicon after As⁺ion implantation at self-annealing regimesKOMAROV, F. F; KOTOV, E. V; NOVIKOV, A. P et al.Radiation effects. 1987, Vol 105, Num 1-2, pp 79-84, issn 0033-7579Article

Thermal stresses and plastic deformation of silicon crystals under powerful ion irradiationZHUKOVA, S. I; KOMAROV, F. F; NOVIKOV, A. P et al.Radiation effects. 1987, Vol 102, Num 1-4, pp 7-21, issn 0033-7579Article

Synthèse du carbure de silicium monocristallin par une technique de dopage ionique de forte intensité en une étapeALEKSANDROV, P. A; BARANOVA, E. K; DEMAKOV, K. D et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 1, pp 149-152, issn 0015-3222Article

Processus entre phases au cours de l'extraction des acides par les aminesTARASOV, V. V; NOVIKOV, A. P; PICHUGIN, A. A et al.Žurnal fizičeskoj himii. 1986, Vol 60, Num 10, pp 2430-2433, issn 0044-4537Article