INVESTIGATION OF FLUORINE-CONCENTRATION PROFILES IN PULSED-LASER-IRRADIATED BF₂⁺-IMPLANTED SILICON SINGLE CRYSTALSNYLANDSTED LARSEN A.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 366-368; BIBL. 11 REF.Article

ANNEALING OR ARSENIC- AND ANTIMONY- IMPLANTED SILICON SINGLE CRYSTALS USING A CW XENON ARE LAMPNYLANDSTED LARSEN A; CORRERA L.1983; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1983; VOL. 76; NO 3; PP. 67-72; BIBL. 16 REF.Article

Epitaxial nickel and cobalt silicid formation by rapid thermal annealing = Bildung von epitaxialem Nickel- und Kobaltsilizid durch schnelles thermisches AnlassenCHEVALLIER, J; NYLANDSTED LARSEN, A.Applied physics. A, Solids and surfaces. 1986, Vol 39, Num 2, pp 141-145, issn 0721-7250Article

RADIATION DEFECTS IN ION-IMPLANTED SILICON. I: MOESSBAUER SPECTROSCOPY OF ¹¹⁹SN DEFECT STRUCTURES FROM IMPLANTATIONS OF RADIOACTIVE ANTIMONYWEYER G; NYLANDSTED LARSEN A; HOLM NE et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 11; PP. 4939-4950; BIBL. 48 REF.Article

Deactivation of electrical active arsenic in silicon during cooling-down from elevates temperaturesNYLANDSTED LARSEN, A; CHRISTENSEN, B; SHIRYAEV, S. Y et al.Journal of applied physics. 1992, Vol 71, Num 10, pp 4854-4858, issn 0021-8979Article

Proceedings of the 22nd International Conference on Defects in Semiconductors, ICDS-22, Aarhus, Denmark, 28 July-1 August 2003BONDE NIELSEN, K; NYLANDSTED LARSEN, A; WEYER, G et al.Physica. B, Condensed matter. 2003, Vol 340-42, issn 0921-4526, 1206 p.Conference Proceedings

MOESSBAUER AND CHANNELING STUDIES ON ¹¹⁹TE, ¹¹⁹SB AND ¹¹⁹SN IMPLANTS IN GROUP-IV ELEMENTS.WEYER G; DEUTCH BI; NYLANDSTED LARSEN A et al.1974; J. PHYS., COLLOQ.; FR.; DA. 1974; NO 6; PP. 297-300; ABS. FR.; BIBL. 6 REF.; (CONF. INT. APPL. EFFET MOESSBAUER; BENDOR; 1974)Conference Paper

Rapide thermal annealing of Ge-implanted InPKRINGHOÊJ, P; GRIBKOVSKII, V. V; NYLANDSTED LARSEN, A et al.Applied physics letters. 1990, Vol 57, Num 15, pp 1514-1516, issn 0003-6951, 3 p.Article

DIRECT COMPARISON OF MOESSBAUER AND CHANNELING STUDIES OF IMPLANTED ¹¹⁹SN IN SILICON SINGLE CRYSTALS.WEYER G; ANDERSEN JU; DEUTCH BI et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 2; PP. 117-121; BIBL. 19 REF.Article

On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped SiZANGENBERG, N. R; NYLANDSTED LARSEN, A.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 5, pp 1081-1086, issn 0947-8396, 6 p.Article

Rapid thermal annealing of indium-implanted silicon single crystalsSHIRYAEV, S. YU; NYLANDSTED LARSEN, A; SAFRONOV, N et al.Journal of applied physics. 1989, Vol 65, Num 11, pp 4220-4224, issn 0021-8979, 5 p.Article

Incorporation of dopant atoms and defects in semiconductors: a microscopic viewEBERT, Ph.Physica. B, Condensed matter. 2003, Vol 340-42, pp 1159-1165, issn 0921-4526, 7 p.Conference Paper

Intense white luminescence of Sm₂O₃ irradiated with ultraviolet laser light under vacuumMOCHIZUKI, Shosuke.Physica. B, Condensed matter. 2003, Vol 340-42, pp 944-948, issn 0921-4526, 5 p.Conference Paper

Impact of 100 MeV Au on the surface of relaxed Si_0.5Ge_0.5 alloy films studied by atomic force microscopyKANJILAL, A; LUNDSGAARD HANSEN, J; NYLANDSTED LARSEN, A et al.Surface science. 2006, Vol 600, Num 15, pp 3087-3092, issn 0039-6028, 6 p.Article

Structural and sensing properties of nanocrystalline SnO₂ films deposited by spray pyrolysis from a SnCl₂ precursorGAIDUK, P. I; KOZJEVKO, A. N; PROKOPJEV, S. L et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 91, Num 4, pp 667-670, issn 0947-8396, 4 p.Article

Exploiting the excited stateSTONEHAM, A. M.Physica. B, Condensed matter. 2003, Vol 340-42, pp 48-57, issn 0921-4526, 10 p.Conference Paper

An ionic model for the (+/-) pinning level of hydrogen and muonium in semiconductorsCOX, S. F. J.Physica. B, Condensed matter. 2003, Vol 340-42, pp 250-253, issn 0921-4526, 4 p.Conference Paper

Defect identification for the As_Ga familyOVERHOF, H; SPAETH, J.-M.Physica. B, Condensed matter. 2003, Vol 340-42, pp 304-308, issn 0921-4526, 5 p.Conference Paper

Features of isotopic shift in the fine structure term of ESR spectra from iron-vacancy pair in siliconMCHEDLIDZE, T; SUEZAWA, M.Physica. B, Condensed matter. 2003, Vol 340-42, pp 556-560, issn 0921-4526, 5 p.Conference Paper

Ortho and para interstitial H2 in siliconLAVROV, E. V; WEBER, J.Physica. B, Condensed matter. 2003, Vol 340-42, pp 646-649, issn 0921-4526, 4 p.Conference Paper

An experimental investigation of ion implantation combined with laser and incoherent-light annealing, and of laser-induced diffusion for the production of solar cellsNYLANDSTED LARSEN, A; SØRENSEN, G; NIELSEN, F et al.Solar energy R & D in the European community. Series C. Photovoltaic power generation. 1983, Vol 3, pp 52-61Article

Photoluminescence in platinum doped GaNSTÖTZLER, A; DEICHER, M.Physica. B, Condensed matter. 2003, Vol 340-42, pp 377-380, issn 0921-4526, 4 p.Conference Paper

A universal model for trends in A₁-type defect states in zincblende and diamond semiconductor structuresLINDSAY, A; O'REILLY, E. P.Physica. B, Condensed matter. 2003, Vol 340-42, pp 434-439, issn 0921-4526, 6 p.Conference Paper

Formation of stable N-V-O complexes in SiKAGESHIMA, H; TAGUCHI, A; WADA, K et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 626-629, issn 0921-4526, 4 p.Conference Paper

DLTS of low-energy hydrogen ion implanted n-SiDEENAPANRAY, Prakash N. K.Physica. B, Condensed matter. 2003, Vol 340-42, pp 719-723, issn 0921-4526, 5 p.Conference Paper