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A model for the photo-electro ionic phenomena in chalcogenide glassesANIYA, M.Journal of non-crystalline solids. 1996, Vol 198200, pp 762-765, issn 0022-3093, 2Conference Paper

Introduction to focused sesssion on anomalous relaxationYONEZAWA, F.Journal of non-crystalline solids. 1996, Vol 198200, pp 503-506, issn 0022-3093, 1Conference Paper

Defect-pool model for doped a-Si:HSCHMAL, J.Journal of non-crystalline solids. 1996, Vol 198200, pp 387-390, issn 0022-3093, 1Conference Paper

Electronic structure of amorphous semiconductors studied by both X-ray photoelectron and soft X-ray spectroscopiesSENEMAUD, C.Journal of non-crystalline solids. 1996, Vol 198200, pp 85-90, issn 0022-3093, 1Conference Paper

Incorporation and thermal stability of hydrogen in amorphous silicon and germaniumBEYER, W.Journal of non-crystalline solids. 1996, Vol 198200, pp 40-45, issn 0022-3093, 1Conference Paper

Material and device consideration for high efficiency a-Si alloy-based multijunction cellsGUHA, S.Journal of non-crystalline solids. 1996, Vol 198200, pp 1076-1080, issn 0022-3093, 2Conference Paper

Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 667 p., 2Conference Proceedings

Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 647 p., 1Conference Proceedings

Electronic processes in hydrogenated amorphous carbonROBERTSON, J.Journal of non-crystalline solids. 1996, Vol 198200, pp 615-618, issn 0022-3093, 2Conference Paper

Lifetime distribution of photoluminescence in a-Si:H based alloysOHEDA, H.Journal of non-crystalline solids. 1996, Vol 198200, pp 284-287, issn 0022-3093, 1Conference Paper

The moving-photocarrier-grating technique for the determination of transport parameters in thin film semiconductorsHUNDHAUSEN, M.Journal of non-crystalline solids. 1996, Vol 198200, pp 146-152, issn 0022-3093, 1Conference Paper

High rate deposition of μc-Si with plasma gun CVDIMAJYO, N.Journal of non-crystalline solids. 1996, Vol 198200, pp 935-939, issn 0022-3093, 2Conference Paper

A linear array thin film position sensitive detector for 3D measurementsFORTUNATO, E; SOARES, F; LAVAREDA, G et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1212-1216, issn 0022-3093, 2Conference Paper

Behavior of surface hydrogen on a-Ge:HTOYOSHIMA, Y; MATSUDA, A; ARAI, K et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1042-1045, issn 0022-3093, 2Conference Paper

Characterization and application of carbazole modified polysiloxanes to electrochromic displaysBARTLETT, I. D; MARSHALL, J. M; MAUD, J. M et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 665-668, issn 0022-3093, 2Conference Paper

Comparative study of light-induced photoconductivity decay in hydrogenated amorphous siliconBEYER, W; MELL, H.Journal of non-crystalline solids. 1996, Vol 198200, pp 466-469, issn 0022-3093, 1Conference Paper

Dependence of light propagation in random multilayers a-Si:H/a-Si3N4+x:H on incident angle, delocalization of p-polarized light and its explanation by extended Brewster angle : Experiments and simulationYAMADA, Y; TAKEUCHI, S; NITTA, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 796-799, issn 0022-3093, 2Conference Paper

Deposition of nanocrystalline silicon films (nc-Si:H) from a pure ECWR-SiH4 plasmaSCHEIB, M; SCHRÖDER, B; OECHSNER, H et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 895-898, issn 0022-3093, 2Conference Paper

Direct fabrication of SiGe crystallites on glass substrate : from nanocrystals to microcrystalsHANNA, J.-I; OHUCHI, T; YAMAMOTO, M et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 879-882, issn 0022-3093, 2Conference Paper

Distribution of dangling bonds in light-soaked and in high-temperature-annealed a-Si:HZHOU, J.-H; KUMEDA, M; SHIMIZU, T et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 359-362, issn 0022-3093, 1Conference Paper

Effect of ion bombardment during deposition of amorphous silicon and silicon-germanium alloy solar cellsXU, X; YANG, J; GUHA, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1113-1116, issn 0022-3093, 2Conference Paper

Effect of optical gap on the stability of a-SiGe solar cellsTERAKAWA, A; ISOMURA, M; TSUDA, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1097-1100, issn 0022-3093, 2Conference Paper

Electron and hole-spin densities in undoped illuminated a-Si:HSALEH, R; ULBER, I; FUHS, W et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 367-370, issn 0022-3093, 1Conference Paper

Fabrication of high quality silicon related films with band-gap of 1.5 eV by chemical annealingFUTAKO, W; YOSHINO, K; NAKAMURA, K et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1046-1049, issn 0022-3093, 2Conference Paper

Formation and electronic states of Si nanocrystallites in amorphous SiZHAO, X; NOMURA, S; AOYAGI, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 847-852, issn 0022-3093, 2Conference Paper

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