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Results 1 to 25 of 475

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Thermal annealing of Si-N absorption bands in nitrogen-implanted siliconSTEIN, H. J.Journal of the Electrochemical Society. 1985, Vol 132, Num 3, pp 668-671, issn 0013-4651Article

On the production of N+ by energetic electronsRICHARDS, P. G; TORR, D. G.JGR. Journal of geophysical research. Part A, Space physics. 1985, Vol 90, Num 10, pp 9917-9919Article

A study of neon-nitrogen interactions in d.c. glow discharges by optical emission spectroscopyAVELAR-BATISTA, J. C; WILSON, A. D; DAVISON, A et al.Thin solid films. 2001, Vol 398-99, Num 1, pp 507-512, issn 0040-6090Conference Paper

The N II 2143-Ł dayglow from Spacelab 1TORR, M. R; TORR, D. G.JGR. Journal of geophysical research. Part A, Space physics. 1985, Vol 90, Num 7, pp 6679-6683Article

Formation of BN by nitrogen ion implantation of boron depositsGUZMAN, L; MARCHETTI, F; CALLIARI, L et al.Thin solid films. 1984, Vol 117, Num 1, pp L63-L66, issn 0040-6090Article

Dissociative excitation of the N+(5S) state by electron impact on N2: excitation function and quenchingERDMAN, P. W; ZIPF, E. C.JGR. Journal of geophysical research. Part A, Space physics. 1986, Vol 91, Num 10, pp 11345-11351Article

Measurements of metastable N+ (1D) 6584 Å emission in the twilight thermosphereTORR, D. G; ABDOU, W. A; TORR, M. R et al.Journal of geophysical research. 1983, Vol 88, Num A4, pp 3190-3196, issn 0022-1406Article

Oscillator strengths for optically allowed transitions in singly ionized nitrogenBELL, K. L; RAMSBOTTOM, C. A; HIBBERT, A et al.Journal of physics. B. Atomic, molecular and optical physics (Print). 1992, Vol 25, Num 8, pp 1735-1744, issn 0953-4075Article

RADIATIVE LIFETIME OF THE 5S2 METASTABLE STATE OF N+KNIGHT RD.1982; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1982; VOL. 48; NO 12; PP. 792-795; BIBL. 19 REF.Article

TRANSITIONS IN THE FOURTH SPECTRUM OF NITROGENGLASS R.1982; Z. PHYS. A.; ISSN 0340-2193; DEU; DA. 1982; VOL. 306; NO 1; PP. 25-31; BIBL. 30 REF.Article

PARTICULARITES DE LA DISTRIBUTION DES IONS O+ ET N+ DANS L'IONOSPHERE SUPERIEURE EQUATORIALE AU MINIMUM DE L'ACTIVITE SOLAIREYAICHNIKOV AP.1981; KOSM. ISSLED.; ISSN 0023-4206; SUN; DA. 1981; VOL. 19; NO 3; PP. 477-479; BIBL. 6 REF.Article

THERMOSPHERIC MOLECULAR OXYGENTORR MR; TORR DG; CARTER R et al.1982; J. GEOPHYS. RES.; ISSN 0022-1406; USA; DA. 1982; VOL. 87; NO A3; PP. 1727-1732; BIBL. 11 REF.Article

SUR LES PARTICULARITES DES VARIATIONS DIURNES DE LA CONCENTRATION DES IONS HE+ ET N+ DANS L'IONOSPHERE SUPERIEUREYAICHNIKOV AP.1981; GEOMAGN. AERON.; ISSN 0016-7940; SUN; DA. 1981; VOL. 21; NO 6; PP. 1120-1121; BIBL. 4 REF.Article

THE 2145 A DAYGLOW AND THE HIGH ALTITUDE NITRIC OXIDE DENSITYVICTOR GA; DALGARNO A.1982; GEOPHYS. RES. LETT.; ISSN 0094-8276; USA; DA. 1982; VOL. 9; NO 8; PP. 866-868; BIBL. 21 REF.Article

Formation of HCN+ in Heterogeneous Reactions of N2+ and N+ with Surface HydrocarbonsHARNISCH, Martina; KEIM, Alan; SCHEIER, Paul et al.The journal of physical chemistry. A. 2013, Vol 117, Num 39, pp 9653-9660, issn 1089-5639, 8 p.Article

On the collision quenching of N+2(B 2Σ+u, v = 0) by N2 and O2 and its influence on the measurement of E/N by intensity ratio of nitrogen spectral bandsDILECCE, G; AMBRICO, P. F; DE BENEDICTIS, S et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 19, issn 0022-3727, 195201.1-195201.7Article

Photoionization of N3+ and Ar8+ in an electron beam ion trap by synchrotron radiationSIMON, M. C; SCHWARZ, M; HIGGINS, S. G et al.Journal of physics. B. Atomic, molecular and optical physics (Print). 2010, Vol 43, Num 6, issn 0953-4075, 065003.1-065003.11Article

EUV intercombination transition rates in Be-like nitrogen and oxygen ions measured at a heavy-ion storage ringTRÄBERT, Elmar; KNYSTAUTAS, Emile J; SAATHOFF, Guido et al.Journal of physics. B. Atomic, molecular and optical physics (Print). 2005, Vol 38, Num 14, pp 2395-2405, issn 0953-4075, 11 p.Article

On the difference in damage distributions of N+ single ion and N2+ molecular ion irradiation of silicon at high dosesMÜLLER, M; FINK, D.Radiation effects and defects in solids. 1995, Vol 133, Num 4, pp 259-266, issn 1042-0150Article

Formation of the new phase during ion implantation of molecular and atomic nitrogen into siliconCHERNYAK, E. YA; LYONS, K. B.Soviet physics. Technical physics. 1991, Vol 36, Num 10, pp 1184-1185, issn 0038-5662Article

Parabolic heavy ion flow in the polar magnetosphereHORWITZ, J. L.JGR. Journal of geophysical research. Part A, Space physics. 1987, Vol 92, Num 1, pp 175-185Article

AE-D measurements of the NO geomagnetic latitudinal distribution and contamination by N+(5S) emissionGERARD, J. C; NOEL, C. E.JGR. Journal of geophysical research. Part A, Space physics. 1986, Vol 91, Num 9, pp 10136-10140Article

Lifetimes of the 3s 2S and 2s2p22S, 2P, 2D terms of N IIIPINNINGTON, E. H; ANSBACHER, W; GOSSELIN, R. N et al.Physics letters. A. 1986, Vol 114, Num 7, pp 373-375, issn 0375-9601Article

Formation of silicon-on-insulator structures by implanted nitrogenNESBIT, L; STIFFLER, S; SLUSSER, G et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 11, pp 2713-2721, issn 0013-4651Article

Implantation temperature dependence of disorder produced by 40 KeV N+ ion irradiation of siliconAL-HASHMI, S. A. R; CARTER, G.Radiation effects. 1985, Vol 85, Num 6, pp 265-271, issn 0033-7579Article

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