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Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wellsYANG, G. F; CHEN, P; HAN, P et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 109, Num 2, pp 337-341, issn 0947-8396, 5 p.Article

Shape-controlled synthesis of GaN microrods by ammonolysis routeKENYAN BAO; WENMIN LIU; AIHUA WANG et al.Applied surface science. 2012, Vol 263, pp 682-687, issn 0169-4332, 6 p.Article

Electroluminescence from GaN-polymer heterojunctionCHITARA, Basant; LAL, Nidhi; KRUPANIDHI, S. B et al.Journal of luminescence. 2013, Vol 134, issn 0022-2313, p. 447Article

Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPEFUJITO, Kenji; KUBO, Shuichi; FUJIMURA, Isao et al.MRS bulletin. 2009, Vol 34, Num 5, pp 313-317, issn 0883-7694, 5 p.Article

Photoluminescence investigation of ferromagnetic Ga_1―xMn_xN layers with GaN templates grown on sapphire (0 0 0 1) substratesYOON, I. T; HAM, M. H; MYOUNG, J. M et al.Applied surface science. 2009, Vol 255, Num 9, pp 4840-4843, issn 0169-4332, 4 p.Article

Gallium nitride materials and devices III (21-24 January 2008, San Jose, California, USA)Morkoç, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2008, issn 0277-786X, isbn 978-0-8194-7069-0, 1Vol, various pagings, isbn 978-0-8194-7069-0Conference Proceedings

Determination of the dielectric constant of GaN in the kHz frequency rangeKANE, M. J; UREN, M. J; WALLIS, D. J et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085006.1-085006.3Article

Nitride-based quantum dot visible lasersBANERJEE, A; FROST, T; BHATTACHARYA, P et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 26, issn 0022-3727, 264004.1-264004.6Conference Paper

Effect of temperature on GaN films deposited on graphite substrates at low-temperatureZHONGWEI DUAN; FUWEN QIN; GUOQIANG LIN et al.Applied surface science. 2013, Vol 280, pp 909-913, issn 0169-4332, 5 p.Article

Initial stages of the adsorption of Sc and ScN thin films on GaN(0001): First principles calculationsGUERRERO-SANCHEZ, J; COCOLETZI, Gregorio H; RIVAS-SILVA, J. F et al.Applied surface science. 2013, Vol 268, pp 16-21, issn 0169-4332, 6 p.Article

Nickel adsorption and incorporation on a 2 x 2-T₄ GaN(00 01 ) surface: A DFT studyGONZALEZ-HERNANDEZ, Rafael; LOPEZ-PEREZ, William; RODRIGUEZ M., Jairo Arbey et al.Applied surface science. 2013, Vol 266, pp 205-208, issn 0169-4332, 4 p.Article

The effects of oxygen co-doping on structural, magnetic and optical properties of Mn-doped GaNHU, B; MAN, B. Y; LIU, M et al.Surface and interface analysis. 2013, Vol 45, Num 6, pp 1052-1055, issn 0142-2421, 4 p.Article

Vacancies in GaN bulk and nanowires: effect of self-interaction correctionsCARTER, Damien J; FUCHS, Martin; STAMPFL, Catherine et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 25, issn 0953-8984, 255801.1-255801.8Article

A model for the band gap energy of the N-rich GaN_1――xAs_x (0 < x ≤ 0.07) and the As-rich GaN_1―xAs_x (0.95 ≤ x ≤ 1)ZHAO, Chuan-Zhen; LI, Na-Na; TONG WEI et al.Physica. B, Condensed matter. 2012, Vol 407, Num 24, pp 4823-4825, issn 0921-4526, 3 p.Article

Indirect interband transition in hexagonal GaNLANCRY, O; FARVACQUE, J.-L; PICHONAT, E et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 7, issn 0022-3727, 075105.1-075105.4Article

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysisRONGFU QIU; HAI LU; DUNJUN CHEN et al.Applied surface science. 2011, Vol 257, Num 7, pp 2700-2706, issn 0169-4332, 7 p.Article

The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopyJIANJUN TANG; TING LIANG; WEILI SHI et al.Applied surface science. 2011, Vol 257, Num 21, pp 8846-8849, issn 0169-4332, 4 p.Article

Etching of GaN by microwave plasma of hydrogenTIWARI, Rajanish N; LI CHANG.Semiconductor science and technology. 2010, Vol 25, Num 3, issn 0268-1242, 035010.1-035010.6Article

Magnetoresistance in a nominally undoped InGaN thin filmDING, K; ZENG, Y. P; LI, Y. Y et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 99, Num 1, pp 63-66, issn 0947-8396, 4 p.Article

Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopyMORAM, M. A; JOHNSTON, C. F; KAPPERS, M. J et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 5, issn 0022-3727, 055303.1-055303.5Article

Nanoindentation characterization of GaN epilayers on A-plane sapphire substratesLIN, Meng-Hung; WEN, Hua-Chiang; HUANG, Chih-Yung et al.Applied surface science. 2010, Vol 256, Num 11, pp 3464-3467, issn 0169-4332, 4 p.Article

Vacancies in wurtzite GaN and AlNLAAKSONEN, K; GANCHENKOVA, M. G; NIEMINEN, R. M et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 1, issn 0953-8984, 015803.1-015803.6Article

Role of the surface in the electrical and optical properties of GaNFOUSSEKIS, M; FERGUSON, J. D; BASKI, A. A et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4892-4895, issn 0921-4526, 4 p.Conference Paper