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Results 1 to 25 of 3575

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Aqueous Stability of Ga- and N-Polar Gallium NitrideFOSTER, Corey M; COLLAZO, Ramon; SITAR, Zlatko et al.Langmuir. 2013, Vol 29, Num 1, pp 216-220, issn 0743-7463, 5 p.Article

Gallium nitride electronicsRAJAN, Siddharth; JENA, Debdeep.Semiconductor science and technology. 2013, Vol 28, Num 7, issn 0268-1242, [249 p.]Serial Issue

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Influence of doping level on shift of the absorption edge of gallium nitride films (Burstein-Moss effect)SVITASHEVA, S. N; GILINSKY, A. M.Applied surface science. 2013, Vol 281, pp 109-112, issn 0169-4332, 4 p.Conference Paper

Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wellsYANG, G. F; CHEN, P; HAN, P et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 109, Num 2, pp 337-341, issn 0947-8396, 5 p.Article

Shape-controlled synthesis of GaN microrods by ammonolysis routeKENYAN BAO; WENMIN LIU; AIHUA WANG et al.Applied surface science. 2012, Vol 263, pp 682-687, issn 0169-4332, 6 p.Article

Electroluminescence from GaN-polymer heterojunctionCHITARA, Basant; LAL, Nidhi; KRUPANIDHI, S. B et al.Journal of luminescence. 2013, Vol 134, issn 0022-2313, p. 447Article

Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPEFUJITO, Kenji; KUBO, Shuichi; FUJIMURA, Isao et al.MRS bulletin. 2009, Vol 34, Num 5, pp 313-317, issn 0883-7694, 5 p.Article

Low fraction of hexagonal inclusions in thick and bulk cubic GaN layersWAHEEDA, S. N; ZAINAL, N; HASSAN, Z et al.Applied surface science. 2014, Vol 317, pp 1010-1014, issn 0169-4332, 5 p.Article

Epitaxy of m-plane GaN on nanoscale patterned c-plane sapphire substratesLIN, Yu-Sheng; LIN, Kung-Hsuan; CHANG, Yu-Ming et al.Surface science. 2012, Vol 606, Num 1-2, issn 0039-6028, L1-L4Article

CHALLENGES & OPPORTUNITIES IN GaN AND ZnO DEVICES & MATERIALSMORKOC, Hadis; CHYI, Jen-Inn; KROST, Alois et al.Proceedings of the IEEE. 2010, Vol 98, Num 7, issn 0018-9219, 228 p.Serial Issue

Study of GaN adsorption on the Si surfaceWEI LI; CHEN, Jun-Fang; TENG WANG et al.Applied surface science. 2009, Vol 256, Num 1, pp 191-193, issn 0169-4332, 3 p.Article

Photoluminescence investigation of ferromagnetic Ga1―xMnxN layers with GaN templates grown on sapphire (0 0 0 1) substratesYOON, I. T; HAM, M. H; MYOUNG, J. M et al.Applied surface science. 2009, Vol 255, Num 9, pp 4840-4843, issn 0169-4332, 4 p.Article

Gallium nitride materials and devices III (21-24 January 2008, San Jose, California, USA)Morkoç, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2008, issn 0277-786X, isbn 978-0-8194-7069-0, 1Vol, various pagings, isbn 978-0-8194-7069-0Conference Proceedings

Solution-based functionalization of gallium nitride nanowires for protein sensor developmentWILLIAMS, Elissa H; DAVYDOV, Albert V; OLESHKO, Vladimir P et al.Surface science. 2014, Vol 627, pp 23-28, issn 0039-6028, 6 p.Article

Anti-reflective and hydrophobic surface of self-organized GaN nano-flowersDHAMODARAN, S; SATHISH CHANDER, D; RAMKUMAR, J et al.Applied surface science. 2011, Vol 257, Num 22, pp 9612-9615, issn 0169-4332, 4 p.Article

Determination of the dielectric constant of GaN in the kHz frequency rangeKANE, M. J; UREN, M. J; WALLIS, D. J et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085006.1-085006.3Article

Nitride-based quantum dot visible lasersBANERJEE, A; FROST, T; BHATTACHARYA, P et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 26, issn 0022-3727, 264004.1-264004.6Conference Paper

Effect of temperature on GaN films deposited on graphite substrates at low-temperatureZHONGWEI DUAN; FUWEN QIN; GUOQIANG LIN et al.Applied surface science. 2013, Vol 280, pp 909-913, issn 0169-4332, 5 p.Article

Initial stages of the adsorption of Sc and ScN thin films on GaN(0001): First principles calculationsGUERRERO-SANCHEZ, J; COCOLETZI, Gregorio H; RIVAS-SILVA, J. F et al.Applied surface science. 2013, Vol 268, pp 16-21, issn 0169-4332, 6 p.Article

Nickel adsorption and incorporation on a 2 x 2-T4 GaN(00 01 ) surface: A DFT studyGONZALEZ-HERNANDEZ, Rafael; LOPEZ-PEREZ, William; RODRIGUEZ M., Jairo Arbey et al.Applied surface science. 2013, Vol 266, pp 205-208, issn 0169-4332, 4 p.Article

The effects of oxygen co-doping on structural, magnetic and optical properties of Mn-doped GaNHU, B; MAN, B. Y; LIU, M et al.Surface and interface analysis. 2013, Vol 45, Num 6, pp 1052-1055, issn 0142-2421, 4 p.Article

Vacancies in GaN bulk and nanowires: effect of self-interaction correctionsCARTER, Damien J; FUCHS, Martin; STAMPFL, Catherine et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 25, issn 0953-8984, 255801.1-255801.8Article

A model for the band gap energy of the N-rich GaN1――xAsx (0 < x ≤ 0.07) and the As-rich GaN1―xAsx (0.95 ≤ x ≤ 1)ZHAO, Chuan-Zhen; LI, Na-Na; TONG WEI et al.Physica. B, Condensed matter. 2012, Vol 407, Num 24, pp 4823-4825, issn 0921-4526, 3 p.Article

Indirect interband transition in hexagonal GaNLANCRY, O; FARVACQUE, J.-L; PICHONAT, E et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 7, issn 0022-3727, 075105.1-075105.4Article

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