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Faisabilité de films isolants de nitrure de silicium par technique de dépôt en phase vapeur à basse température: comparaison des filières gazeuses dichlorosilane-ammoniaque et disilane-ammoniaque = Feasibility of silicon nitride films by vapor deposition at low temperature: comparison of dichlorsilane-ammonia and disilane-ammonia gaseous systemsKouassi, Kouakou Léonce; Bielle Daspet, Danièle.1992, 130 p.Thesis

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Le renforcement et la fissuration du carbure et du nitrure de silicium : une approche locale du comportement viscoplastiqueVivier, Pierre; Boussuge, Michel.1988, 145 p.Thesis

Etude de fluage et de microstructure de composites à base de nitrure de silicium = Creep and microstructure of silicon nitride-based compositesPeni, Fation; Crampon, Jacques.1992, 149 p.Thesis

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Etude et mise au point de capteurs chimiques de type ISFET sensibilisés par greffage du diélectrique = Studu and realization of ISFET chemical sensors sensitized by grafting of the gate insulatorPerrot, Hubert; Jaffrezic, Nicole.1990, 126 p.Thesis

Influence de SiC sur la microstructure et sur la résistance au fluage de Si₃N₄ fritté avec Al₂O₃ et Y₂O₃Ramoul-Badache, Khedidja; Lancin, Maryse.1989, 166 p.Thesis

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Modified Wagner model for the active-to-passive transition in the oxidation of Si₃N₄JUNJIE WANG; LITONG ZHANG; QINGFENG ZENG et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 11, issn 0022-3727, 115412.1-115412.7Article

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Microstructure and infiltration kinetics of Si₃N4/Al-Mg composites fabricated by pressureless infiltrationWANG, Shou-Ren; WANG, Ying-Zi; YONG WANG et al.Journal of materials science. 2007, Vol 42, Num 18, pp 7812-7818, issn 0022-2461, 7 p.Article

Observation of trapped light within the radiation continuumCHIA WEI HSU; BO ZHEN; JEONGWON LEE et al.Nature (London). 2013, Vol 499, Num 7457, pp 188-191, issn 0028-0836, 4 p.Article

Synthesis of colourless silver precursor ink for printing conductive patterns on silicon nitride substratesQIJIN HUANG; WENFENG SHEN; WEIJIE SONG et al.Applied surface science. 2012, Vol 258, Num 19, pp 7384-7388, issn 0169-4332, 5 p.Article

Coherent growth and superhardness effect in VC/Si₃N₄ nanomultilayersGUANQUN LI; YUGE LI; GEYANG LI et al.Surface & coatings technology. 2011, Vol 205, Num 13-14, pp 3881-3884, issn 0257-8972, 4 p.Article

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The influence of N ion bombardment on the properties of PET surface and SiN_X/PET complexWANYU DING; OKABE, Yoshio; WEIPING CHAI et al.Surface & coatings technology. 2011, Vol 205, Num 23-24, pp 5318-5323, issn 0257-8972, 6 p.Article

Relations procédés-microtexture-propriétés dans des composites à matrice Si₃N₄ renforcés SiC = Process-microtexture-properties relationships in SiC reinforced Si₃N₄ matrix compositeMadigou, Véronique; Monthioux, Marc.1991, 160 p.Thesis

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Hard and relaxed a-SiN_xH_y films prepared by PECVD: Structure analysis and formation mechanismXIANGDONG XU; QIONG HE; TAIJUN FAN et al.Applied surface science. 2013, Vol 264, pp 823-831, issn 0169-4332, 9 p.Article

Key technique for texturing a uniform pyramid structure with a layer of silicon nitride on monocrystalline silicon waferHUANG, Bohr-Ran; YANG, Ying-Kan; YANG, Wen-Luh et al.Applied surface science. 2013, Vol 266, pp 245-249, issn 0169-4332, 5 p.Article

The effect of argon plasma treatment on the permeation barrier properties of silicon nitride layersMAJEE, S; CERQUEIRA, M. F; TONDELIER, D et al.Surface & coatings technology. 2013, Vol 235, pp 361-366, issn 0257-8972, 6 p.Article

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVDKSHIRSAGAR, Abhijeet; NYAUPANE, Pradeep; BODAS, Dhananjay et al.Applied surface science. 2011, Vol 257, Num 11, pp 5052-5058, issn 0169-4332, 7 p.Article