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Results 1 to 25 of 7051

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Quasi-Fermi levels in MSM structureMAŁACHOWSKI, M. J; STEPNIEWSKI, J.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 820-823, issn 0038-1101Article

Diagnosing alternative conceptions of Fermi energy among undergraduate studentsSHARMA, Sapna; KUMAR AHLUWALIA, Pardeep.European journal of physics. 2012, Vol 33, Num 4, pp 883-895, issn 0143-0807, 13 p.Article

The presence and lack of Fermi acceleration in nonintegrable billiardsOLIFFSON KAMPHORST, S; LEONEL, E. D; DA SILVA, J. K. L et al.Journal of physics. A, Mathematical and theoretical (Print). 2007, Vol 40, Num 37, issn 1751-8113, F887-F893Article

A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfacesVAN MEIRHAEGHE, R. L; CARDON, F; GOMES, W. P et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1985, Vol 188, Num 1-2, pp 287-291, issn 0022-0728Article

Fermi level dependent properties of hydrogen in crystalline siliconCSASZAR, W; ENDRÖS, A. L.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 112-115, issn 0921-5107Conference Paper

Anderson model : lattice effects in high dimensionsHÜLSENBECK, G; QI QIN.Solid state communications. 1994, Vol 90, Num 3, pp 195-199, issn 0038-1098Article

The Fermi and the redox potentialREISS, H.Journal of physical chemistry (1952). 1985, Vol 89, Num 18, pp 3783-3791, issn 0022-3654Article

EXTREME PRESSURES. III. THE COMPRESSOELECTRIC EFFECT: CHANGE OF THE FERMI ENERGY OF A METAL WITH PRESSURE.LEVITT LS.1975; LETTERE NUOVO CIMENTO; ITAL.; DA. 1975; VOL. 14; NO 4; PP. 128-130; BIBL. 4 REF.Article

Spin polarized photoemission studies of magnetic quantum well statesJOHNSON, P. D.Journal of magnetism and magnetic materials. 1995, Vol 148, Num 1-2, pp 167-171, issn 0304-8853Conference Paper

The use of thermopower and DC electrical conductivity measurements to determine the dynamic resistance and Fermi surface distortion of a thin film of goldSTEELE, C. B; BEYNON, J.International journal of electronics. 1994, Vol 76, Num 5, pp 987-991, issn 0020-7217Conference Paper

A new criterion for the metallicity of elements = Un nouveau critère pour la métallicité des élémentsRAO, C. N. R; GANGULY, P.Solid state communications. 1986, Vol 57, Num 1, pp 5-6, issn 0038-1098Article

STRUCTURE ELECTRONIQUE DU GRAPHITE DOPEBELYJ AA; OVCHINNIKOV AA.1975; TEOR. EKSPER. KHIM., U.S.S.R.; S.S.S.R.; DA. 1975; VOL. 11; NO 6; PP. 723-731; BIBL. 7 REF.Article

INFLUENCE DU NIVEAU DE DOPAGE SUR LA FORME DE LA BANDE LIMITE DE LUMINESCENCE DE L'ARSENIURE D'INDIUMVIL'KOTSKIJ VA; DOMANEVSKIJ DS; KAKANAKOV RD et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 5; PP. 945-955; BIBL. 17 REF.Article

A CONTRIBUTION TO THE DEPENDENCE OF SECONDARY ELECTRON EMISSION FROM THE WORK FUNCTION AND FERMI ENERGYSCHAEFER J; HOELZL J.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 1; PP. 81-86; BIBL. 8 REF.Serial Issue

Chaotic features of multichannel magnetotransport through quantum wires with periodic bend structureVACEK, K; OKIJI, A; KASAI, H et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 11412-11415, issn 0163-1829Article

Nonadiabatic surface reaction : mechanism of electron emission in the Cs+O2 systemBÖTTCHER, A; IMBECK, R; MORGANTE, A et al.Physical review letters. 1990, Vol 65, Num 16, pp 2035-2037, issn 0031-9007Article

Valence band spectroscopy of V(100) surfacePERVAN, P; VALLA, T; MILUN, M et al.Solid state communications. 1994, Vol 89, Num 11, pp 917-920, issn 0038-1098Article

Quantum oscillations of the hopping magnetoconductivity in doped semiconductors : the influence of compensationSCHIRMACHER, W; FRITZSCHE, H.-T; KEMPTER, R et al.Solid state communications. 1993, Vol 88, Num 2, pp 125-129, issn 0038-1098Article

An apparent paradox in the thermodynamics of Fermi levels = Un paradoxe apparent dans la thermodynamique des niveaux de FermiROSE, A; WILLIAMS, R.Solid state communications. 1985, Vol 53, Num 6, pp 537-538, issn 0038-1098Article

On the inappropriate use of the intrinsic level as a measure of the electrostatic potential in semiconductor devicesMARSHAK, A. H.IEEE electron device letters. 1985, Vol 6, Num 3, pp 128-129, issn 0741-3106Article

Reply to comment on temperature dependence of electrical conductivity and the probability density functionLOVE, P.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 22, pp L567-L569, issn 0022-3719Article

Fermi level shift photoconductive organic pigment films measured by Kelvin vibrating capacior methodHIRAMOTO, M; IHARA, K; YOKOYAMA, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 7B, pp 3803-3807, issn 0021-4922, 1Conference Paper

Annihilation des positons dans le tantale et son carbureREMPEL, A. A; DRUZHKOV, A. P; GUSEV, A. I et al.Fizika metallov i metallovedenie. 1989, Vol 68, Num 2, pp 271-279, issn 0015-3230Article

ON THE DIELECTRIC MATRIX FORMULATION OF LATTICE DYNAMICS.CZACHOR A; HOLAS A.1976; ACTA PHYS. POLON., A; POLOGNE; DA. 1976; VOL. 49; NO 3; PP. 307-323; BIBL. 24 REF.Article

Enhanced magnetic susceptibility of (DI-DCNQI)2CuTAMURA, M; KASHIMURA, Y; SAWA, H et al.Solid state communications. 1995, Vol 93, Num 7, pp 585-588, issn 0038-1098Article

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