Electronic structure of Ge in SiO₂HAGON, J. P; JAROS, M; STONEHAM, A. M et al.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 25, pp 4957-4962, issn 0022-3719Article

Hydrogenic impurity states in a quantum well wireLEE, J; SPECTOR, H. N.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1984, Vol 2, Num 1, pp 16-20, issn 0734-2101Article

Deep levels associated with impurities at the bond-centered interstitial site in SiJOHNSON, W. L; SANKEY, O. F; DOW, J. D et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 4, pp 2070-2073, issn 0163-1829Article

Field tunneling from impurities in case of anisotropic effective massesDARGYS, A; MATULIS, A.Physica status solidi. B. Basic research. 1984, Vol 125, Num 1, pp K71-K73, issn 0370-1972Article

Ground state properties of the two impurity anderson model in a 1/N expansionRASUL, J. W; HEWSON, A. C.Solid state communications. 1984, Vol 52, Num 2, pp 217-220, issn 0038-1098Article

Deep-level impurities: a possible guide to prediction of band edge discontinuities in semiconductor heterojunctionsLANGER, T. M; HEINRICH, H.Physical review letters. 1985, Vol 55, Num 13, pp 1414-1417, issn 0031-9007Article

Influence de la polarisation des centres d'impureté sur la mobilité des porteurs dans des structures bidimensionnellesZON, B. A; KUPERSHMIDT, V. YA; SYSOEV, B. I et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 1, pp 140-142, issn 0015-3222Article

Microscopic models of Hg⁺, Au° and Pt^- isoelectronic interstitial impurities in siliconALVES, J. L. A; LEITE, J. R; GOMES, V. M. S et al.Solid state communications. 1985, Vol 55, Num 4, pp 333-337, issn 0038-1098Article

Contribution à l'étude théorique des métaux de transition dans le silicium = Theoretical study of transition metals in siliconMDAA, Abdesselam.1985, 114 fThesis

Sur les niveaux d'énergie de Se dans GeOSIP'YAN, YU. A; PROKOPENKO, V. M; TAL'YANSKIJ, V. I et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1984, Vol 39, Num 3, pp 126-129, issn 0370-274XArticle

The energies of neutral donors in a weakly compensated classical impurity bandBUTCHER, P. N; COX, I. D; MCINNES, J. A et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 21, pp 3745-3752, issn 0022-3719Article

Solution analytique du problème d'un centre profond par la méthode des fractions continuesVASIL'EV, A. EH; IL'IN, N. P; MASTEROV, V. F et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1823-1829, issn 0015-3222Article

Comment on: on shallow-deep instability of impurity level in semiconductorsCHAUDHURI, S; COON, D. D.Solid state communications. 1985, Vol 55, Num 12, issn 0038-1098, 1113Article

The splitting of impurity d-states in zincblende crystalsBIERNACKI, S. W.Physica status solidi. B. Basic research. 1985, Vol 130, Num 1, pp K59-K63, issn 0370-1972Article

Impurity states in SiO₂EKENBERG, U. A; ROBERTSON, J; DOW, J. D et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 4, pp 2216-2220, issn 0163-1829Article

Local optical centers in rare gas crystalsRATNER, A. M; TARASOVA, E. I.Physica status solidi. B. Basic research. 1984, Vol 124, Num 1, pp 249-260, issn 0370-1972Article

High-resolution photothermal ionization spectroscopy of lithium-related shallow donors in germaniumDARKEN, L. S.Physical review. B, Condensed matter. 1983, Vol 27, Num 10, pp 6564-6567, issn 0163-1829Article

Coulombic impurity states in a deep quantum wellLIU ZHENPENG.Chinese physics. 1985, Vol 4, Num 4, pp 981-984, issn 0273-429XArticle

Hydrogen-like excited states of a deep donor in germaniumGRIMMEISS, H. G; LARSSON, K; MONTELIUS, L et al.Solid state communications. 1985, Vol 54, Num 10, pp 863-865, issn 0038-1098Article

Generalized spheroidal wave equations from an image-potential method for surface effects on impurity statesYUEH SHAN; TSIN-FU JIANG.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5487-5489, issn 0163-1829Article

Test of pressure-dependent SCC theories of impurity spectra using a combined SCC and CF modelMERKLE, L. D.Solid state communications. 1984, Vol 52, Num 3, pp 299-302, issn 0038-1098Article

L'hydrogène dans les cristaux: interactions quadripolairesBARYSHEVSKIJ, V. G; KUTEN, S. A; RAPOPORT, V. I et al.Fizika tverdogo tela. 1983, Vol 25, Num 7, pp 2080-2084, issn 0367-3294Article

On shallow-deep instability of impurity level in semiconductorsMUKHOPADHYAY, G.Solid state communications. 1985, Vol 53, Num 1, pp 47-49, issn 0038-1098Article

Atomic deuterium passivation of boron acceptor levels in silicon crystalsMIKKELSEN, J. C. JR.Applied physics letters. 1985, Vol 46, Num 9, pp 882-884, issn 0003-6951Article

Electronic structure of copper, silver, and gold impurities in siliconFAZZIO, A; CALDAS, M. J; ZUNGER, A et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 2, pp 934-954, issn 0163-1829Article