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Schottky barrier formation : Al deposition on GaAs(110)ORTEGA, J; RINCON, R; PEREZ, R et al.Applied surface science. 1992, Vol 60-61, pp 736-741, issn 0169-4332Conference Paper

Selection rules for vibronic coupling in quasi-one-dimensional solids III, Staggered molecular stacksBOZOVIC, I; BOZOVIC, N.Journal of physics. A, mathematical and general. 1990, Vol 23, Num 22, pp 5131-5139, issn 0305-4470Article

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Explanation of positive and negative PICTS peaks in SI-GaAsSCHMERLER, S; HAHN, T; HAHN, S et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S328-S332, SUP1Conference Paper

On the accessibility of the bandgap on semiconductor interfaces by non-equilibrium energies of electrons and holesLORENZ, W; SOURISSEAU, R.Journal of electroanalytical chemistry and interfacial electrochemistry. 1988, Vol 239, Num 1-2, pp 9-16, issn 0022-0728Article

Inapplicability of the Sugiyama phase sum rule to very thin filmsROGERS, J. P. III; FEUCHTWANG, T. E; CUTLER, P. H et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 6, pp 4346-4349, issn 0163-1829Article

The chemical potential of an intrinsic semiconductor near T=0LANDSBERG, P. T; BROWNE, D. C.Solid state communications. 1987, Vol 62, Num 3, pp 207-208, issn 0038-1098Article

Conduction mechanisms in erbium silicide Schottky diodesUNEWISSE, M. H; STOREY, J. W. V.Journal of applied physics. 1993, Vol 73, Num 8, pp 3873-3879, issn 0021-8979Article

A new theoretical approach for the quantum well semiconductor laserTAYLOR, G. W.Progress in quantum electronics. 1992, Vol 16, Num 2, pp 73-133, issn 0079-6727Article

Influence of the axially varying quasi-Fermi-level separation of the active region on spatial hole burning in distributed-feedback semiconductor lasersCHAMPAGNE, Y; MCCARTHY, N.Journal of applied physics. 1992, Vol 72, Num 6, pp 2110-2118, issn 0021-8979Article

The core hole effect in the X-ray K-absorption spectrum of KLEIRO, J. A; KOKKO, K.Physics letters. A. 1990, Vol 145, Num 6-7, pp 383-386, issn 0375-9601Article

Golden-rule approach to the soft-x-ray-absorption problem. IV: Numerical analysis = Approche de la règle d'or au problème de l'absorption de rayons X mous. IV: Analyse numériqueOHTAKA, K; TANABE, Y.Physical review. B, Condensed matter. 1986, Vol 34, Num 6, pp 3717-3729, issn 0163-1829Article

DLTS evaluation of nonexponential transients of defect levels in cuprous oxide (Cu₂O)PAPADIMITRIOU, L.Solid-state electronics. 1993, Vol 36, Num 3, pp 431-434, issn 0038-1101Article

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Electronic properties of highly doped trans-polyacetyleneTABOR, S; STAFSTROOM, S.Physical review. B, Condensed matter. 1991, Vol 44, Num 23, pp 12737-12741, issn 0163-1829Article

Thermopower probe of the transport mechanism in oxide superconductor compoundsYANG, R. Q.Physica status solidi. B. Basic research. 1991, Vol 167, Num 2, pp K83-K89, issn 0370-1972Article

Effects of hydrogen on the photochemical unpinning of gallium arsenideIVES, N. A; STUPIAN, G. W; LEUNG, M. S et al.Applied physics letters. 1990, Vol 56, Num 16, pp 1537-1539, issn 0003-6951Article

Site-dependent electronic effects, force, and deformations in scanning tunneling microscopy of flat metal surfacesCIRACI, S; BARATOFF, A; BATRA, I. P et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 12, pp 7618-7621, issn 0163-1829Article

Breaking of Akulov parametrization for magnetostriction in iron = Cassure de la paramétrisation d'Akulov pour la magnétostriction dans le ferKUŁAKOWSKI, K; DE TREMOLET DE LACHEISSERIE, E.Journal of magnetism and magnetic materials. 1989, Vol 81, Num 3, pp 349-353, issn 0304-8853Article

Graphite as an aromatic systemMINOT, C.Journal of physical chemistry (1952). 1987, Vol 91, Num 25, pp 6380-6385, issn 0022-3654Article

Reference states for absolute half-cell potentialsHANSEN, W. N; HANSEN, G. J.Physical review letters. 1987, Vol 59, Num 9, pp 1049-1052, issn 0031-9007Article

The redox potential and the Fermi level in solutionKHAN, S. U. M; KAINTHLA, R. C; BOCKRIS, J. O'M et al.Journal of physical chemistry (1952). 1987, Vol 91, Num 23, pp 5974-5977, issn 0022-3654Article

Photoemission study of the surface states that pin the Fermi level at Si(100)2×1 surfacesMARTENSSON, P; CRICENTI, A; HANSSON, G. V et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8855-8858, issn 0163-1829, 2Article

Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivityFRIGERI, C; ATTOLINI, G; BOSI, M et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S303-S306, SUP1Conference Paper