Une particularité du soufre donneur dans GaPBIRYULIN, YU.F; LAGVILAVA, T.A; MIL'VIDSKIJ, M.G et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 6, pp 1070-1075, issn 0015-3222Article

Impurity levels induced by a C impurity in GaAsSCOLFARO, L. M. R; PINTANEL, R; GOMES, V. M. S et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 10, pp 7135-7139, issn 0163-1829Article

Influence of hydrostatic pressure on the platinum levels in siliconSTÖFFLER, W; WEBER, J.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8892-8895, issn 0163-1829, 2Article

Ionisation des centres d'impureté dans les semiconducteurs à bande étroite par un champ électrique alternatifKRYUCHKOV, S. V; SYRODOEV, G. A.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1695-1697, issn 0015-3222Article

Defects in single-crystal silicon induced by hydrogenationJOHNSON, N. M; PONCE, F. A; STREET, R. A et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 8, pp 4166-4169, issn 0163-1829Article

Prediction of a low-spin ground state in the GaAs:V²⁺ impurity systemKATAYAMA-YOSHIDA, H; ZUNGER, A.Physical review. B, Condensed matter. 1986, Vol 33, Num 4, pp 2961-2964, issn 0163-1829Article

Semiempirical formalism for the calculation of deep-level wave functions in k spaceDAI, H.-H; GUNDERSEN, M. A; MYLES, C. W et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8234-8237, issn 0163-1829, 1Article

Etats d'impureté du thallium dans le sulfure de plomb d'après les données de l'absorption IRVEJS, A. N; KRUPITSKAYA, R. YU.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 1, pp 185-187, issn 0015-3222Article

Théorie du champ de ligandes des coefficients de couplage orbite-réseau et spin-réseau des ions d⁵ dans les composés II-VIBoulanger, Daniel; Curie, D.1988, 274 p.Thesis

Calculation of the impurity levels in semiconductors by the effective-mass-Pseudopotential method with fitting parametersGORCZYCA, I.Physica status solidi. B. Basic research. 1986, Vol 136, Num 1, pp K45-K48, issn 0370-1972Article

Application of the divisor method to multiple peak DLTS spectraDEVRIES, P. D; AZIM KHAN, A.Journal of electronic materials. 1989, Vol 18, Num 6, pp 763-766, issn 0361-5235Article

Ionisation des impuretés par des solitons dans des superréseauxKRYUCHKOV, S. V.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 7, pp 1314-1316, issn 0015-3222Article

Transition-metal impurities in semiconductors ― their connection with band lineups and Schottky barriersTERSOFF, J; HARRISON, W. A.Physical review letters. 1987, Vol 58, Num 22, pp 2367-2370, issn 0031-9007Article

Structure and properties of ultrafine diamond powder produced by detonation synthesisCHIGANOVA, G. A; CHIGANOV, A. S.Inorganic materials. 1999, Vol 35, Num 5, pp 480-484, issn 0020-1685Article

Chaos and light interaction with impurity centres in a crystalALEKSEEV, K. N; ALEKSEVA, N. V.Journal of physics. B. Atomic, molecular and optical physics (Print). 1992, Vol 25, Num 8, pp 1949-1961, issn 0953-4075Article

Modification of the electron spectrum of low-dimensional systems with impurity levels near the band edgeIVANOV, M. A; SKRIPNIK, YU. V; MATHON, D et al.Soviet physics. Solid state. 1992, Vol 34, Num 2, pp 188-192, issn 0038-5654Article

Comments on : novel hall effect spectroscopy of impurity levels in semiconductors. Authors' repliesHOFFMANN, H. J; KLEVELAND, B; CRISTOLOVEANU, S et al.Solid-state electronics. 1991, Vol 34, Num 11, pp 1309-1311, issn 0038-1101Article

Gasd purification and measurement at the PPT levelBRIESACHER, J. L; NAKAMURA, M; OHMI, T et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 12, pp 3717-3723, issn 0013-4651Article

Random degeneration in the spectrum of impurity ions with half-integral angular momentum in a crystal field of cubic symmetrySVIRIDOV, D. T; SMIRNOV, YU. F; SHIROKOV, A. M et al.Soviet physics. Crystallography. 1991, Vol 36, Num 5, pp 602-605, issn 0038-5638Article

Hydrogen molecular ions in two dimensionsJIA-LIN ZHU; JIA-JIONG XIONG.Physical review. B, Condensed matter. 1990, Vol 41, Num 17, issn 0163-1829, 12 274-12 277Article

Characterization of optical coatings with backscattering spectrometryLEAVITT, J. A; MCINTYRE, L. C. JR; ASHBAUGH, M. D et al.Applied optics. 1989, Vol 28, Num 14, pp 2762-2764, issn 0003-6935Article

First-principles calculations of multiplet structures of transition metal deep impurities in II-VI and III-V semiconductorsWATANABE, S; KAMIMURA, H.Materials science & engineering. B, Solid-state materials for advanced technology. 1989, Vol 3, Num 3, pp 313-324, issn 0921-5107, 12 p.Article

Chemical trends for deep levels associated with vacancy-impurity complexes in semiconductorsSHEN, Y.-T; MYLES, C. W.Physical review. B, Condensed matter. 1989, Vol 40, Num 9, pp 6222-6235, issn 0163-1829, 14 p.Article

Observation of stress-tuned magnetic-field-induced anticrossing in As-doped germaniumYOUNGDALE, E. R; AGGARWAL, R. L.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2514-2519, issn 0163-1829Article

Calcul de la structure électronique d'impuretés éléments de transition à spins polarisés dans les semiconducteurs. Le manganèse et le fer dans l'arséniure de galliumVASIL'EV, A. EH; IL'IN, N. P; MASTEROV, V. F et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 7, pp 1253-1257, issn 0015-3222Article