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System effects in double-channel gated-integrator-based deep-level transient spectroscopyBALASUBRAMANYAM, N; VIKRAM KUMAR.Journal of applied physics. 1988, Vol 64, Num 11, pp 6311-6314, issn 0021-8979Article

Capacitance switching method of eliminating false transients on the Boonton 72B capacitance meter in deep-level transient spectroscopy applicationsCHRISTOFOROU, N; LESLIE, J. D.Measurement science & technology (Print). 1991, Vol 2, Num 2, pp 127-130, issn 0957-0233Article

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Deep levels of thermal defects in high-resistivity ultrapure n-type siliconVERBITSKAYA, E. M; EREMIN, V. K; IVANOV, A. M et al.Soviet physics. Semiconductors. 1992, Vol 26, Num 11, pp 1101-1106, issn 0038-5700Article

Formation of deep levels in p-type Si as a result of etching with a gas in an atmosphere containing chlorineOMEL'YANOVSKAYA, N. M; ITAL'YANTSEV, A. G; KRASNOBAEV, L. YA et al.Soviet physics. Semiconductors. 1990, Vol 24, Num 11, pp 1267-1269, issn 0038-5700, 3 p.Article

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Stoichiometry related deep levels in undoped, semi-insulating GaAsDOBRILLA, P.Journal of applied physics. 1988, Vol 64, Num 12, pp 6767-6769, issn 0021-8979Article

Deep states associated with stacking faults in siliconLAHIJI, G. R; HAMILTON, B; PEAKER, A. R et al.Electronics Letters. 1988, Vol 24, Num 21, pp 1340-1342, issn 0013-5194, 3 p.Article

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Application de mécanique de la rupture au composite carbone-carbone bi-directionnelR'Mili, Mohamed; Fantozzi, Gilbert.1987, 221 p.Thesis

A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz siliconHUANG, Y. L; SIMOEN, E; CLAEYS, C et al.Journal of materials science. Materials in electronics. 2007, Vol 18, Num 7, pp 705-710, issn 0957-4522, 6 p.Conference Paper

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