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A SCREENED COULOMB POTENTIAL FOR SCATTERING OF SLOW HEAVY IONS.KALBITZER S; OETZMANN H.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 59; NO 3; PP. 197-198; BIBL. 11 REF.Article

RANGE PARAMETERS OF HEAVY IONS AT 10 AND 35 KEV IN SILICON.FEUERSTEIN A; KAIBITZER S; OETZMANN H et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 3; PP. 165-166; BIBL. 13 REF.Article

RANGE PARAMETERS OF HEAVY IONS IN AMORPHOUS TARGETS AT LSS-ENERGIES OF 0.0006 <OU= APPARTIENT A <OU= 0.3.OETZMANN H; FEUERSTEIN A; GRAHMANN H et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 55; NO 3; PP. 170-172; BIBL. 7 REF.Article

Laser CVD of a-Si:H from SiH4 and Si2H6 : relations between chemistry, growth rate and film propertiesHESCH, K; HESS, P; OETZMANN, H et al.Applied surface science. 1990, Vol 46, Num 1-4, pp 233-238, issn 0169-4332, 6 p.Conference Paper

High-Tc YBa2Cu3O7-δ prepared by chemical vapour depositionSCHMADERER, F; HUBER, R; OETZMANN, H et al.Applied surface science. 1990, Vol 46, Num 1-4, pp 53-60, issn 0169-4332, 8 p.Conference Paper

High-Tc-superconductors prepared by CVDSCHMADERER, F; HUBER, R; OETZMANN, H et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.539-C2.548Conference Paper

The Ba-problem in CVD-YBa2Cu3O7-δHTc superconductorsFITZER, E; OETZMANN, H; SCHMADERER, F et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.713-C2.720Conference Paper

An inorganic-organic passivation double layer for thin film circuitsKROKOSZINSKI, H.-J; OETZMANN, H; GERNOTH, H et al.Thin solid films. 1986, Vol 135, Num 1, pp 1-8, issn 0040-6090Conference Paper

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