au.\*:("OGAWA, Tomoya")
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Determination of tiny scatterer's shape by light scattering tomographySAKAI, Kazufumi; OGAWA, Tomoya.Optical review. 2001, Vol 8, Num 2, pp 148-151, issn 1340-6000Article
Proceedings of the Eighth International Conference on Defects - Recognition, Imaging and Physics in Semiconductors, Narita, Japan, September 15-18, 1999OGAWA, Tomoya; TAJIMA, Michio.Journal of crystal growth. 2000, Vol 210, Num 1-3, issn 0022-0248, 432 p.Conference Proceedings
Characterization of polished surfaces by MakyohKUGIMIYA, K.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 461-468, issn 0022-0248, 8 p.Conference Paper
Characterization of semiconductors by photoluminescence mapping at room temperatureTAJIMA, M.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 1-7, issn 0022-0248, 7 p.Conference Paper
Synchrotron X-ray topographic studies on minute strain fields in as-grown silicon single crystalsISHIKAWA, T.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 131-140, issn 0022-0248, 10 p.Conference Paper
Makyoh : the 2000 year old technology still aliveKUGIMIYA, K.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 420-422, issn 0022-0248Conference Paper
Study on defects in CZ-Si crystals grown by normal, cusp magnetic field and electromagnetic field techniques using multi-chroic infrared light scattering tomographyMINYA MA; IRISAWA, Toshiharu; TSURU, Toshihide et al.Journal of crystal growth. 2000, Vol 218, Num 2-4, pp 232-238, issn 0022-0248Article
Effect of C/B sequential implantation on the B acceptors in 4H-SiCNAKANO, Y; KACHI, T; TADANO, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 283-287, issn 0022-0248Conference Paper
Characterization of grown-in stacking faults and dislocations in CZ-Si crystals by bright field IR laser interferometerNAKAI, K; HASEBE, M; OHTA, K et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 20-25, issn 0022-0248Conference Paper
Lattice images of dislocations with edge components in GaN epilayers grown on Al2O3 substratesJUNYONG KANG; OGAWA, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 157-161, issn 0022-0248Conference Paper
Molecular dynamics analysis on diffusion of point defectsKAKIMOTO, K; UMEHARA, T; OZOE, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 54-59, issn 0022-0248Conference Paper
Comparison between standard and near-field cathodoluminescenceHEIDERHOFF, R; SERGEEV, O. V; LIU, Y. Y et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 303-306, issn 0022-0248Conference Paper
Influence of distributed defects on the photoelectric characteristics of a large-area deviceSOPORI, B; WEI CHEN.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 375-378, issn 0022-0248Conference Paper
Recombination centers in electron irradiated GaInP : application to the degradation of space solar cellsKHAN, A; YAMAGUCHI, M; TAKAMOTO, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 264-267, issn 0022-0248Conference Paper
Reliability and degradation mechanisms of InGa(Al)As/GaAs DQW high-power diode lasersKREUTZ, E. W; WIEDMANN, N; JANDELEIT, J et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 313-317, issn 0022-0248Conference Paper
Stoichiometry and Te related defect in n-Al0.3Ga0.7AsMURAI, A; OYAMA, Y; NISHIZAWA, J et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 251-254, issn 0022-0248Conference Paper
TEM assessment of GaN epitaxial growthBROWN, P. D.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 143-150, issn 0022-0248Conference Paper
The study of Pt depth profile in semiconductors using cyclotron-produced radioisotopesYAGI, T; NAGANO, A; NISHIHARA, Y et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 132-136, issn 0022-0248Conference Paper
Investigation on grown-in defects in CZ-Si crystal under slow pulling rateFURUKAWA, J; TANAKA, H; NAKADA, Y et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 26-30, issn 0022-0248Conference Paper
Change in shape of oxygen precipitate grown by thermal annealingSAKAI, K; YAMAGAMI, T; OJIMA, K et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 65-68, issn 0022-0248Conference Paper
Life cycle of grown-in defects in silicon as observed by IR-LSTKISSINGER, G; VANHELLEMONT, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 7-14, issn 0022-0248Conference Paper
Determination of polarity of GaN cross-section TEM specimens using quantitative electron diffractionZANDBERGEN, H. W; JANSEN, J; ZAUNER, A. R. A et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 167-171, issn 0022-0248Conference Paper
A study of interface states of directly bonded silicon-on-insulator structuresBULDYGIN, S. A; GOLOD, S. V; KAMAEV, G. N et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 107-111, issn 0022-0248Conference Paper
Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance-voltage transient spectroscopyTOKUDA, Y; KAMIYA, K; OKUMURA, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 260-263, issn 0022-0248Conference Paper
Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodesRECHENBERG, I; KLEHR, A; RICHTER, U et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 307-312, issn 0022-0248Conference Paper