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PARALLEL SILICIDE CONTACTSOHDOMARI I; TU KN.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3735-3739; BIBL. 5 REF.Article

A STRUCTURAL MODEL FOR THE INTERFACE BETWEEN AMORPHOUS AND (100) CRYSTALLINE SILICONSAITO T; OHDOMARI I.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 43; NO 4; PP. 673-687; BIBL. 8 REF.Article

TED PATTERN STUDIES OF THE STRUCTURE OF POST-ANNEATED AMORPHOUS SILICON LAYERS ON SINGLE CRYSTAL SILICON.OHDOMARI I; ONODA N.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 5; PP. 1373-1380; BIBL. 7 REF.Article

CARRIER GENERATION IN GERMANIUM IMPLANTED WITH ALUMINIUM AT ROOM TEMPERATUREOHDOMARI I; ITOH T.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1709-1712; BIBL. 7 REF.Serial Issue

Questions about the Si(111)-(7×7) reconstructed surfaceOHDOMARI, I.Surface science. 1990, Vol 227, Num 3, pp L125-L129, issn 0039-6028Article

An hypothesis on the role of oxygen in the Si(111)-1×1 → 7×7OHDOMARI, I.Surface science. 1992, Vol 271, Num 1-2, pp 170-178, issn 0039-6028Article

MICROSTRUCTURE AND SCHOTTKY BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICONOHDOMARI I; KUAN TS; TU KN et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7020-7029; BIBL. 19 REF.Article

DISTORTION ENERGY DISTRIBUTIONS IN THE RANDOM NETWORK MODEL OF AMORPHOUS SILICONSAITO T; KARASAWA T; OHDOMARI I et al.1982; JOURNAL OF NON-CRYSTALLINE SOLIDS; ISSN 0022-3093; NLD; DA. 1982; VOL. 50; NO 2; PP. 271-276; BIBL. 8 REF.Article

ANNEALING BEHAVIOR OF A VOID NETWORK IN AMORPHOUS SILICON.OHDOMARI I; IKEDA M; YOSHIMOTO H et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 64; NO 2; PP. 253-255; BIBL. 9 REF.Article

HRTEM observation of the Si/SiO2 interfaceAKATSU, H; OHDOMARI, I.Applied surface science. 1989, Vol 41-42, Num 1-4, pp 357-364, issn 0169-4332Conference Paper

HIGH-TEMPERATURE ANNEALING OF THE SIO2/GAAS SYSTEM.OHDOMARI I; MIZUTANI S; KUME H et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 4; PP. 218-220; BIBL. 5 REF.Article

SUR LE NOUVEAU CENTRE RPE OBSERVE DANS SI IMPLANTE PAR DES IONS LOURDS AR+OHDOMARI I; IKEDA M; OHNO K et al.1975; J. VACUUM SOC. JAP.; JAP.; DA. 1975; VOL. 18; NO 9; PP. 300-305; ABS. ANGL.; BIBL. 11 REF.Article

Chemical trend in silicide electronic structure and Schottky-barrier heights of silicide-silicon interfacesHARA, S; OHDOMARI, I.Physical review. B, Condensed matter. 1988, Vol 38, Num 11, pp 7554-7557, issn 0163-1829Article

EFFECTS OF HYDROGENATION ON LIGHTLY DOPED POLYCRYSTALLINE SILICONCAMPBELL DR; HWANG JCM; OHDOMARI I et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7454-7457; BIBL. 16 REF.Article

Analysis of atomic-scale structure of microtwins in L-SPE Si by modelingUENO, T; OHDOMARI, I.Japanese journal of applied physics. 1992, Vol 31, Num 6A, pp 1838-1841, issn 0021-4922, 1Article

Size effect of parallel silicide contactOHDOMARI, I; AOCHI, H.Physical review. B, Condensed matter. 1987, Vol 35, Num 2, pp 682-686, issn 0163-1829Article

Quantitative analysis of the bond rearrangement process during solid phase epitaxy of amorphous siliconSAITO, T; OHDOMARI, I.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1984, Vol 49, Num 5, pp 471-479, issn 0141-8637Article

SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDEOHDOMARI I; TU KN; D'HEURLE FM et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 1028-1030; BIBL. 7 REF.Article

STRUCTURE OF SURFACE LAYERS OF SILICON HEAVILY IMPLANTED WITH AR.OHDOMARI I; IKEDA M; OHNO K et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5065-5068; BIBL. 15 REF.Article

ICFSI-2: second international conference on the formation of semiconductor interfaces: [selected papers], Takarazuka, Japan, November 8-12, 1988HIRAKI, Akio; KAWAZU, A; OHDOMARI, I et al.Applied surface science. 1989, Vol 41-42, issn 0169-4332, XVI-680 p. [696 p.]Conference Proceedings

Computer simulation of high-resolution transmission electron microscope images based on ball-and-spoke models of (100) Si/SiO2 interfaceOHDOMARI, I; MIHARA, T; KAI, K et al.Journal of applied physics. 1986, Vol 60, Num 11, pp 3900-3904, issn 0021-8979Article

Structural study of PtSi/(111)Si interface with high-resolution electron microscopyKAWARADA, H; OHDOMARI, I; HORIUCHI, S et al.Japanese journal of applied physics. 1984, Vol 23, Num 10, pp L799-L802, issn 0021-4922, 2Article

Monte Carlo study on formation of periodic structures on Si(111) surfacesWATANABE, T; HOSHINO, T; OHDOMARI, I et al.Surface science. 1997, Vol 389, Num 1-3, pp 375-381, issn 0039-6028Article

Evaluation of SiO2/(001)Si interface roughness using high-resolution transmission electron microscopy and simulationAKATSU, H; SUMI, Y; OHDOMARI, I et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 4, pp 1616-1621, issn 0163-1829Article

LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING PD2SI FORMATIONOHDOMARI I; TU KN; SUGURO K et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 1015-1017; BIBL. 8 REF.Article

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