NETWORK OXYGEN EXCHANGE DURING WATER DIFFUSION IN SIO₂PFEFFER R; OHRING M.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 777-784; BIBL. 34 REF.Article

TRACER SELF-DIFFUSION AND ELECTROMIGRATION IN THIN TIN FILMSSUN PH; OHRING M.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 478-485; BIBL. 37 REF.Article

GRAIN-BOUNDARY ELECTROMIGRATION IN THIN FILMS. II. TRACER MEASUREMENTS IN PURE AU.TAI KL; OHRING M.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 36-45; BIBL. 23 REF.Article

ROLE OF ALLOY VALENCE ON ELECTROMIGRATION IN THIN TIN ALLOY FILMSOHRING M; SINGH P.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 31; NO 3; PP. 253-264; BIBL. 24 REF.Article

DEPENDENCE OF THE SI-SIO₂ BARRIER HEIGHT ON SIO₂ THICKNESS IN MOS TUNNEL STRUCTURES.KASPRZAK LA; LAIBOWITZ RB; OHRING M et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4281-4286; BIBL. 40 REF.Article

LOW TEMPERATURE COMPOUND FORMATION IN CU/SN THIN FILM COUPLES = FORMATION DE COMPOSE AUX BASSES TEMPERATURES DANS LES COUPLES DE COUCHES MINCES CU/SNCHOPRA R; OHRING M; OSWALD RS et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 94; NO 4; PP. 279-288; BIBL. 14 REF.Article

CONTACT POTENTIAL MEASUREMENTS ON THIN SIO₂ FILMS.BESS M; OSWALD R; OHRING M et al.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 813-817; BIBL. 12 REF.Article

CONVERSION ELECTRON MOESSBAUER STUDY OF AMORPHOUS FESI THIN FILMSOSWALD RS; RON M; OHRING M et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 12; PP. 883-887; BIBL. 7 REF.Article

LATERAL SELF-DIFFUSION AN ELECTROMIGRATION IN THIN METAL FILMSTAI KL; SUN PH OHRING M.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 25; NO 2; PP. 343-352; BIBL. 26 REF.Article

Tracer study of diffusion and electromigration in thin tin films = Etude par traceur de la diffusion et de l'électromigration dans des couches minces d'étainPRABJIT SINGH; OHRING, M.Journal of applied physics. 1984, Vol 56, Num 4, pp 899-907, issn 0021-8979Article

A new experimental technique for studying mass transport in liquid metals = Une nouvelle technique expérimentale pour étudier le transport de masse dans les métaux liquidesKHANDROS, I. Y; OHRING, M.Journal of materials science. 1989, Vol 24, Num 1, pp 252-258, issn 0022-2461Article

Mass transport effects in centrifuged bilayer liquid metals = Effets de transport de masse dans des bicouches centrifugées de métaux liquidesKHANDROS, I; OHRING, M.Scripta metallurgica. 1984, Vol 18, Num 12, pp 1355-1358, issn 0036-9748Article

TEM observations of early nucleation and growth stages in aluminum films on liquid gallium dropletsSCHWARCZ, D; NAKAHARA, S; OHRING, M et al.Thin solid films. 1994, Vol 245, Num 1-2, pp 260-266, issn 0040-6090Article

Growth rate and composition calibration of III/V materials on GaAs and InP using reflection high-energy electron diffraction oscillationsKOPF, R. F; KUO, J. M; OHRING, M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 4, pp 1920-1923, issn 0734-211XConference Paper

Compound growth in platinum/tin-lead solder diffusion couplesMEAGHER, B; SCHWARCZ, D; OHRING, M et al.Journal of materials science. 1996, Vol 31, Num 20, pp 5479-5486, issn 0022-2461Article

Reactions between tungsten and molybdenum thin films and polycrystalline diamond substratesYEH, J. J; PFEFFER, R. L; COLE, M. W et al.Diamond and related materials. 1996, Vol 5, Num 10, pp 1195-1203, issn 0925-9635Article

Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAsKOPF, R. F; HERMAN, M. H; LAMONT SCHNOES, M et al.Journal of applied physics. 1992, Vol 71, Num 10, pp 5004-5011, issn 0021-8979Article