Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("ONISAWA K")

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 13 of 13

  • Page / 1
Export

Selection :

  • and

PRECIPITATION OF GRAPHITE AND NICKEL CARBIDE IN A NICKEL-1.8 AT% CARBON ALLOY.NEMOTO M; ONISAWA K; SUTO H et al.1977; TRANS. JAP. INST. METALS; JAP.; DA. 1977; VOL. 18; NO 4; PP. 331-339; BIBL. 28 REF.Article

TiO2/SiO2 multilayer insulating films for ELDsNAKAYAMA, T; ONISAWA, K; FUYAMA, M et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 4, pp 1026-1204, issn 0013-4651Article

Effects of substrate temperature during phosphor layer deposition on luminance of SrCCe blue-green-emitting thin-film electroluminescent devicesONISAWA, K.-I; ABE, Y; NAKAYAMA, T et al.Japanese journal of applied physics. 1991, Vol 30, Num 2, pp 314-319, issn 0021-4922, 6 p., 1Article

Effects of oxygen in CaS : Eu active layers on emission properties of thin film electroluminescent cellsABE, Y; ONISAWA, K.-I; ONO, Y. A et al.Japanese journal of applied physics. 1990, Vol 29, Num 8, pp 1495-1498, issn 0021-4922, 4 p., 1Article

Transferred charge in the active layer and EL device characteristics of TFEL cellsONO, Y. A; KAWAKAMI, H; FUYAMA, M et al.Japanese journal of applied physics. 1987, Vol 26, Num 9, pp 1482-1492, issn 0021-4922, 1Article

White light emitting thin film electroluminescent cells with SrS:Pr,Ce active layer and their application to multicolor electroluminescent devicesABE, Y; ONISAWA, K; TAMURA, K et al.Japanese journal of applied physics. 1989, Vol 28, Num 8, pp 1373-1377, issn 0021-4922, 5 p., 1Article

Oxygen in SrS phosphor powder and its effects on performance of thin film electroluminescent devicesONISAWA, K.-I; ABE, Y; TAMURA, K et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 2, pp 599-601, issn 0013-4651, 3 p.Article

Crystalline fraction of microcrystalline silicon films prepared by plasma-enhanced chemical vapor deposition using pulsed silane flowKANEKO, T; ONISAWA, K.-I; WAKAGI, M et al.Japanese journal of applied physics. 1993, Vol 32, Num 11A, pp 4907-4911, issn 0021-4922, 1Article

Luminance improvement of blue-green emitting SrS:Ce EL cell by controlling vacuum conditions with sulfur additionONISAWA, K; FUYAMA, M; TAGUCHI, K et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 10, pp 2631-2634, issn 0013-4651Conference Paper

Structural change during annealing of amorphous indium-tin oxide films deposited by sputtering with H2O additionNISHIMURA, E; ANDO, M; ONISAWA, K.-I et al.Japanese journal of applied physics. 1996, Vol 35, Num 5A, pp 2788-2792, issn 0021-4922, 1Article

White-light emitting thin film electroluminescent devices with stacked SrS:Ce/CaS:Eu active layersONO, Y. A; FUYAMA, M; ONISAWA, K et al.Journal of applied physics. 1989, Vol 66, Num 11, pp 5564-5571, issn 0021-8979, 8 p.Article

Stress reduction of chromium thin films deposited by cluster-type sputtering system for ultra-large-size (550 x 650 mm) substratesNAKAJIMA, K; ONISAWA, K.-I; CHAHARA, K.-I et al.Vacuum. 1998, Vol 51, Num 4, pp 761-764, issn 0042-207XArticle

Roles of bonded hydrogens and oxygen vacancies on crystallization of hydrogenated amorphous indium tin oxide (a-ITO:H) filmsANDO, M; TAKABATAKE, M; NISHIMURA, E et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 28-32, issn 0022-3093, 1Conference Paper

  • Page / 1